296
Approximate Weight...530g
Thermal Characteristics
Parameter
Symbol
Conditions
Max. Rated Value
Unit
Average Rectified Output Current
I
0AV
3-Phase Full
Wave Rectified
150
A
150
A
Operating Junction Temperature Range
T
jw
125150
T
j
125, Can not be Biased for Thyristor.
-40150
Storage Temperature Range
T
stg
-40125
Isolation Voltage
V
iso
-AC
Terminal to Base, ACmin.
2000
V
Mounting Torque
Mounting
F
Greased
M6
2.53.5
Nm
Terminal
M6
2.53.5
Nm
Gate Terminal
M4
1.21.6
Nm
Parameter
Symbol
Conditions
Maximum Value
Unit
Thermal Resistance
R
th
c-f
-
Case to Fin, Total, Greased
0.06
/W
6
Part of Diode Bridge6dies
Maximum Ratings
.1Value Per 1 Arm.
Parameter
Symbol
Grade
Unit
PGH1508AM
1
Repetitive Peak Reverse Voltage
V
RRM
800
V
1
Non Repetitive Peak Reverse Voltage
V
RSM
900
V
Parameter
Symbol
Conditions
Max. Rated Value
Unit
1
Surge Forward Current
I
FSM
50Hz
Half Sine Wave, 1Pulse, Non-Repetitive
1100
A
1
I Squared t
I
2
t
10ms
6050
A
2
s
Allowable Operating Frequency
f
400
Hz
T
c
102
Non-Bias
T
c
77
Bias
CIRCUIT
+5
-6
AC1
AC2
AC3
R4
G
Part of Diode Bridge & Thyristor
Maximum Ratings
OUTLINE DRAWING
Dimensionmm
THYRISTOR
150A Avg 800 Volts
PGH1508AM
297
Electrical Characteristics
1Value Per 1 Arm.
1
Part of Thyristor1die
Maximum Ratings
Electrical Characteristics
Parameter
Symbol
Conditions
Maximum Value
Unit
1
Peak Reverse Current
I
RM
T
j
=125V
RM
=V
RRM
15
mA
1
Peak Forward Voltage
V
FM
T
j
= 25I
FM
=150A
1.20
V
Thermal Resistance
R
th
j-c
-
Junction to Case, Total
0.14
/W
Parameter
Symbol
Grade
Unit
PGH1508AM
Repetitive Peak Off-State Voltage
V
DRM
800
V
Non Repetitive Peak Off-State Voltage
V
DSM
900
V
Repetitive Peak Reverse Voltage
V
RRM
800
V
Non Repetitive Peak Reverse Voltage
V
RSM
900
V
Parameter
Symbol
Conditions
Max. Rated Value
Unit
Surge On-State Current
I
TSM
50Hz
Half Sine Wave, 1Pulse, Non-Repetitive
2700
A
I Squared t
I
2
t
10ms
36400
A
2
s
Critical Rate of Rise of Turned-On Current
di/dt
V
D
=2/3V
DRM
I
TM
=2I
O
T
j
125
I
G
=300mAdi
G
/dt=0.2A/s
100
A/s
Peak Gate Power
P
GM
5
W
Average Gate Power
P
G
AV
1
W
Peak Gate Current
I
GM
2
A
Peak Gate Voltage
V
GM
10
V
Peak Gate Reverse Voltage
V
RGM
5
V
Parameter
Symbol
Conditions
Maximum Value
Unit
Min.
Typ.
Max.
Peak Off-State Current
I
DM
T
j
=125V
DM
=V
DRM
20
mA
Peak Reverse Current
I
RM
T
j
=125V
RM
=V
RRM
20
mA
Peak On-State Voltage
V
TM
T
j
=25I
TM
=150A
1.23
V
Gate Current to Trigger
I
GT
V
D
=6VI
T
=1A
T
j
=-40
300
mA
T
j
=
25
150
mA
T
j
= 125
80
mA
Gate Voltage to Trigger
V
GT
V
D
=6VI
T
=1A
T
j
=-40
5.0
V
T
j
=
25
3.0
V
T
j
= 125
2.0
V
Gate Non-Trigger Voltage
V
GD
T
j
=125V
D
=2/3V
DRM
0.25
V
Critical Rate of Rise of Off-State Voltage
dv/dt
T
j
=125V
D
=2/3V
DRM
500
V/s
Turn-Off Time
t
q
T
j
=125I
TM
=I
O
V
D
=2/3V
DRM
dv/dt=20V/s
V
R
=100V
-di/dt=20A/s
150
s
Turn-On Time
t
gt
T
j
=25V
D
=2/3V
DRM
I
TM
=3I
O
I
G
=300mAdi
G
/dt=0.2A/s
6
s
Delay Time
t
d
2
s
Rise Time
t
r
4
s
Latching Current
I
L
T
j
=25
150
mA
Holding Current
I
H
T
j
=25
100
mA
Thermal Resistance
R
th
j-c
-
Junction to Case
0.3
/W
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