ChipFind - документация

Электронный компонент: CLC446

Скачать:  PDF   ZIP
Features
s
400MHz bandwidth (A
v
= +2)
s
5mA supply current
s
0.02%, 0.03 differential gain, phase
s
2000V/
s slew rate
s
9ns settling to 0.1%
s
0.05dB gain flatness to 100MHz
s
-65/-78dBc HD2/HD3
Applications
s
High resolution video
s
A/D driver
s
Medical imaging
s
Video switchers & routers
s
RF/IF amplifier
s
Communications
s
Instrumentation
General Description
The National CLC446 is a very high-speed unity-gain-stable cur-
rent-feedback op amp that is designed to deliver the highest lev-
els of performance from a mere 50mW quiescent power. It pro-
vides a very wide 400MHz bandwidth, a 2000V/
s slew rate and
900ps rise/fall times. The CLC446 achieves its superior speed-
vs-power using an advanced complementary bipolar IC process
and National's current-feedback architecture.
The CLC446 is designed to drive video loads with very low
differential gain and phase errors (0.02%, 0.03). Combined with
its very low power (50mW), the CLC446 makes an excellent
choice for NTSC/PAL video switchers and routers. With its very
quick edge rates (900ps) and high slew rate (2000V/
s), the
CLC446 also makes an excellent choice for high-speed, high-
resolution component RGB video systems.
The CLC446 makes an excellent low-power high-resolution A/D
converter driver with its very fast 9ns settling time (to 0.1%) and
low harmonic distortion.
The combination of high performance and low power make
the CLC446 useful in many high-speed general purpose
applications. Its current-feedback architecture maintains consistent
performance over a wide gain range and signal levels. DC gain
and bandwidth can be set independently. Also, either maximally
flat AC response or linear phase response can be emphasized.
V
in
R
4
R
f
+
-
R
g
C
2
CLC446
C
5
V
o
R
5
R
1
R
2
C
3
C
4
R
3
C
1
Typical Application
Elliptic-Function Low Pass Filter
CLC446
400MHz, 50mW Current-Feedback Op Amp
Non-Inverting
Frequency Response (A
v
= +2)
Gain (dB)
Frequency (Hz)
8
6
1M
1G
2
-2
4
0
10M
100M
V
o
= 0.5V
pp
V
EE
V
CC
Pinout
DIP & SOIC
November 1998
CLC446
400MHz, 50mW Current-Feedback Op
Amp
N
1998 National Semiconductor Corporation
http://www.national.com
Printed in the U.S.A.
http://www.national.com
2
Electrical Characteristics
(A
V
= +2, R
f
= 249
: V
CC
= + 5V, R
L
= 100
;
unless specified)
PARAMETERS
CONDITIONS
TYP
MIN/MAX RATINGS
UNITS
NOTES
Ambient Temperature
CLC446AJ
+25C
+25C
0 to 70C
-40 to 85C
FREQUENCY DOMAIN RESPONSE
-3dB bandwidth
V
o
< 0.2V
pp
400
340
300
300
MHz
V
o
< 2.0V
pp
280
210
190
190
MHz
gain flatness
V
o
< 2.0V
pp
<100MHz
0.05
0.2
0.2
0.2
dB
linear phase dev. V
o
< 2.0V
pp
<100MHz
0.2
0.5
0.8
0.8
deg
differential gain
NTSC, R
L
=150
0.02
0.04
0.04
0.04
%
differential phase
NTSC, R
L
=150
0.03
0.05
0.05
0.05
deg
TIME DOMAIN RESPONSE
rise and fall time
2V step
0.9
1.4
1.5
1.6
ns
settling time to 0.1%
2V step
9
13
15
15
ns
overshoot
2V step
6
15
18
18
%
slew rate
2V step, 0.5V crossing
2000
1400
1300
1200
V/
s
DISTORTION AND NOISE RESPONSE
2
nd
harmonic distortion
2V
pp
, 5MHz
-65
-59
-58
-58
dBc
2V
pp
, 20MHz
-55
-48
-48
-48
dBc
2V
pp
, 50MHz
-54
-43
-42
-42
dBc
3
rd
harmonic distortion
2V
pp
, 5MHz
-78
-70
-68
-68
dBc
2V
pp
, 20MHz
-70
-62
-60
-60
dBc
2V
pp
, 50MHz
-50
-45
-42
-42
dBc
equivalent input noise
voltage (e
ni
)
>1MHz
3.8
4.8
5.0
5.1
nV/
Hz
non-inverting current (i
bn
)
>1MHz
2.0
2.6
2.8
3.3
pA/
Hz
inverting current (i
bi
)
>1MHz
16
19
20
21
pA/
Hz
STATIC DC PERFORMANCE
input offset voltage
2
7
10
11
mV
A
average drift
17
25
35
V/C
input bias current
non-inverting
3
12
25
25
A
A
average drift
30
90
130
nA/C
input bias current
inverting
10
22
30
35
A
A
average drift
26
75
85
nA/C
power supply rejection ratio
DC
52
45
43
43
dB
common-mode rejection ratio
DC
48
44
42
42
dB
supply current
R
L
=
4.8
5.8
6.2
6.2
mA
A
MISCELLANEOUS PERFORMANCE
input resistance
non-inverting
1.5
1.0
0.85
0.70
M
input capacitance
non-inverting
1
2
2
2
pF
input range
common-mode
2.8
2.6
2.4
2.3
V
output voltage range
R
L
= 100
3.1
2.8
2.8
2.6
V
R
L
=
3.2
3.0
2.9
2.8
V
output current
48
48
48
48
mA
output resistance, closed loop
DC
0.04
0.1
0.1
0.1
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Absolute Maximum Ratings
supply voltage
6V
output current
48mA
common-mode input voltage
Vcc
maximum junction temperature
+175C
storage temperature range
-65C to +150C
lead temperature (soldering 10 sec)
+300C
ESD rating (human body model)
1000V
Notes
A) J-level: spec is 100% tested at +25C.
Ordering Information
Model
Temperature Range
Description
CLC446AJP
-40
C to +85
C
8-pin PDIP
CLC446AJE
-40
C to +85
C
8-pin SOIC
CLC446ALC
-40
C to +85
C
dice
CLC446A8B
-55
C to +125
C
8-pin CerDIP, MIL-STD-883
CLC446AMC
-55
C to +125
C
dice, MIL-STD-883
Contact the factory for other packages and DESC SMD number.
Package Thermal Resistance
Package

JC

JA
Plastic (AJP)
70C/W
125C/W
Surface Mount (AJE)
60C/W
140C/W
Ceramic (A8B)
40C/W
130C/W
Reliability Information
Transistor Count
36
MTBF (based on limited test data)
39Mhr
3
http://www.national.com
Typical Performance Characteristics
(V
CC
= 5V, A
v
= +2, R
f
=249
,,
R
L
= 100
; unless specified)
Non-Inverting Frequency Response
Normalized Magnitude (1dB/div)
Frequency (Hz)
10M
100M
1G
V
o
= 0.5V
pp
Phase (deg)
0
-90
-360
-180
-270
-450
1M
A
v
= 1V/V
R
f
= 453
A
v
= 2V/V
R
f
= 249
A
v
= 5V/V
R
f
= 200
A
v
= 10V/V
R
f
= 200
Inverting Frequency Response
Normalized Magnitude (1dB/div)
Frequency (Hz)
1M
10M
1G
Phase (deg)
-180
-225
-360
-270
-315
100M
V
o
= 0.5V
pp
A
v
= -1V/V
R
f
= 249
A
v
= -2V/V
R
f
= 249
A
v
= -5V/V
R
f
= 200
A
v
= -10V/V
R
f
= 200
Frequency Response vs. R
L
Normalized Magnitude (1dB/div)
Frequency (Hz)
10M
100M
1G
Phase (deg)
0
-90
-360
-180
-270
-450
1M
R
L
= 1k
R
L
= 100
R
L
= 500
V
o
= 0.5V
pp
Frequency Response vs. V
o
Normalized Magnitude (1dB/div)
Frequency (Hz)
1M
10M
100M
1G
0.1V
pp
1V
pp
4V
pp
2V
pp
Frequency Response vs. C
L
Normalized Magnitude (1dB/div)
Frequency (Hz)
1M
10M
100M
1G
C
L
= 22pF
R
s
= 33.2
C
L
= 10pF
R
s
= 46.4
C
L
= 47pF
R
s
= 21
C
L
= 100pF
R
s
= 13.3
C
L
1k
R
s
+
-
249
249
Recommended R
s
vs. C
L
R
s
(
)
C
L
(pF)
40
30
0
10
20
100
20
10
30
40
50
60
70
80
90
50
Small Signal Pulse Response
Output Voltage (0.5V/div)
Time (2ns/div)
A
v
=
+
2V/V
A
v
=
-
2V/V
Large Signal Pulse Response
Output Voltage (1V/div)
Time (2ns/div)
A
v
=
-
2V/V
A
v
=
+
2V/V
Equivalent Input Noise
Voltage Noise (nV/
Hz)
Frequency (Hz)
100
1
1k
10k
100k
10
Current Noise (pA/
Hz)
100
1
10
1M
10M
i
bi
e
ni
i
bn
100M
2nd Harmonic Distortion
Distortion (dBc)
Frequency (Hz)
-50
-60
-90
1M
10M
-70
-80
V
o
= 2V
pp
-100
2nd R
L
= 100
2nd R
L
= 1k
3rd Harmonic Distortion
Distortion (dBc)
Frequency (Hz)
-60
-70
-100
1M
10M
-80
-90
V
o
= 2V
pp
-50
3rd R
L
= 100
3rd R
L
= 1k
Differential Gain and Phase (3.58MHz)
Differential Gain (%)
Number of 150
Loads
0.01
0
-0.03
1
2
3
-0.01
-0.02
Differential Phase (deg)
-0.04
-0.08
-0.2
-0.12
-0.16
-0.04
0
4
Phase Pos Sync
Phase Neg Sync
Gain Pos Sync
Gain Neg Sync
2nd Harmonic Distortion vs. P
out
Distortion (dBc)
Output Power (dBm)
-40
-50
-80
-4
-2
0
-60
-70
2
4
6
8
10
12
10MHz
5MHz
2MHz
1MHz
3rd Harmonic Distortion vs. P
out
Distortion (dBc)
Output Power (dBm)
-65
-70
-85
-4
-2
-75
-80
-90
-95
0
2
4
6
8
10
12
10MHz
5MHz
2MHz
1MHz
V
os
, I
BN
, & I
BI
vs. Temperature
V
os
(mV)
Temperature (
C)
2
1
-60
-40
-20
0
-1
I
BI
, I
BN
(
A)
2
-2
-6
-10
0
20
40
60
80
I
BN
V
os
I
BI
http://www.national.com
4
The CLC446 has a current-feedback architecture built in
an advanced complementary bipolar process. The key
features of current-feedback are:
s
AC bandwidth is independent of voltage gain
s
Unity-gain stability
s
Frequency response may be adjusted with R
f
s
High slew rate
s
Low variation in performance for a wide range
of gains, signal levels and loads
s
Fast settling
Current-feedback operation can be explained with a
simple model. The voltage gain for the circuits in Figures
1 and 2 is approximately:
where
s
A
v
is the DC voltage gain
s
R
f
is the feedback resistor
s
Z(j
) is the CLC446's open-loop
transimpedance gain
s
is the loop-gain
The denominator of the equation above is approximately
1 at low frequencies. Near the -3dB corner
frequency, the interaction between R
f
and Z(j
)
dominates the circuit performance. Increasing R
f
does
the following:
s
Decreases loop-gain
s
Decreases bandwidth
s
Lowers pulse response overshoot
s
Reduces gain peaking
s
Affects frequency response phase linearity
CLC446 Operation
The following topics will supply you with:
s
Design parameters, formulas and techniques
s
Interfaces
s
Application circuits
s
Layout techniques
s
SPICE model information
DC Gain (non-inverting)
The non-inverting DC voltage gain for the configuration
shown in Figure 1 is .
The normalized gain plots in the
Typical Performance
Characteristics
section show different feedback
resistors (R
f
) for different gains. These values of R
f
are
recommended for obtaining the highest bandwidth with
minimal peaking. The resistor R
t
provides DC bias for
the non-inverting input.
For A
v
< 5, use linear interpolation on the nearest A
v
val-
ues to calculate the recommended value of R
f
. For A
v
5, the minimum recommended R
f
is 200
.
Select R
g
to set the DC gain: .
DC gain accuracy is usually limited by the tolerance of R
f
and R
g
.
Figure 1: Non-Inverting Gain
+
-
CLC446
Fi
R
f
0.1
F
6.8
F
V
o
V
in
V
CC
0.1
F
6.8
F
V
EE
3
2
4
7
6
+
+
R
g
R
t
Typical Performance Characteristics
(V
CC
= 5V, A
v
= +2, R
f
= 249
,,
R
L
= 100
; unless specified)
Short Term Settling Time
V
o
(% Output Step)
Time (sec)
0.2
0.1
-0.2
1n
10n
100n
0
-0.1
1
10
V
O
= 2V step
Long Term Settling Time
V
o
(% Output Step)
Time (s)
0.2
0.1
-0.2
1
10
100
0
-0.1
1m
10m
100m
1
V
O
= 2V step
V
V
A
1
R
Z j
o
in
v
f
=
+
( )
Z j
R
f
( )
A
1
R
R
v
f
g
= +
R
R
A
1
g
f
v
=
-
CLC446 Design Information
5
http://www.national.com
DC Gain (unity gain buffer)
The recommended R
f
for unity gain buffers is 453
. R
g
is left open. Parasitic capacitance at the inverting node
may require a slight increase of R
f
to maintain a flat
frequency response.
DC Gain (inverting)
The inverting DC voltage gain for the configuration
shown in Figure 2 is .
Figure 2: Inverting Gain
The normalized gain plots in the
Typical Performance
Characteristics
section show different feedback
resistors (R
f
) for different gains. These values of R
f
are
recommended for obtaining the highest bandwidth with
minimal peaking. The resistor R
t
provides DC bias for the
non-inverting input.
For |A
v
| < 5, use linear interpolation on the nearest A
v
val-
ues to calculate the recommended value of R
f
. For |A
v
|
5, the minimum recommended R
f
is 200
.
Select R
g
to set the DC gain: . At large
gains, R
g
becomes small and will load the previous stage.
This can be solved by driving R
g
with a low impedance
buffer like the CLC111, or increasing R
f
and R
g
.
See the
AC Design (small signal bandwidth)
sub-section for the tradeoffs.
DC gain accuracy is usually limited by the tolerance of R
f
and R
g
.
DC Gain (transimpedance)
Figure 3 shows a transimpedance circuit where the cur-
rent I
in
is injected at the inverting node. The current
source's output resistance is much greater than R
f
.
The DC transimpedance gain is:
The recommended R
f
is 453
. Parasitic capacitance at
the inverting node may require a slight increase of R
f
to
maintain a flat frequency response.
DC gain accuracy is usually limited by the tolerance of R
f
.
Figure 3: Transimpedance Gain
DC Design (level shifting)
Figure 4 shows a DC level shifting circuit for inverting
gain configurations. V
ref
produces a DC output level
shift of , which is independent of the DC
output produced by V
in
.
Figure 4: Level Shifting Circuit
DC Design (single supply)
Figure 5 is a typical single-supply circuit. R
1
and R
2
form
a voltage divider that sets the non-inverting input DC volt-
age. This circuit has a DC gain of 1. A low
frequency zero is set by R
g
and C
2
. The coupling capac-
itor C
1
isolates its DC bias point from the
previous stage. Both capacitors make a high pass
response; high frequency gain is determined by R
f
and R
g
.
Figure 5: Single Supply Circuit
The complete gain equation for the circuit in Figure 5 is:
A
R
R
v
f
g
= -
+
-
CLC446
R
f
0.1
F
6.8
F
V
o
V
in
V
CC
0.1
F
6.8
F
V
EE
R
g
R
t
3
2
4
7
6
+
+
R
R
A
g
f
v
=
A
V
I
R
R
o
in
f
=
= -
+
-
CLC446
R
f
0.1
F
6.8
F
V
o
V
CC
0.1
F
6.8
F
V
EE
R
t
3
2
4
7
6
+
+
I
in
V
in
R
g
+
-
CLC446
R
f
V
o
V
ref
R
ref
R
t
+
-
CLC446
R
f
V
o
V
in
V
CC
R
g
R
2
R
1
V
CC
C
1
C
2
V
V
s
1 s
1 s
1
R
R
1 s
o
in
1
1
2
f
g
2
=
+
+
+


+
-
V
R
R
ref
f
ref