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Электронный компонент: LM112

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TL H 7751
LM112LM212LM312
Operational
Amplifiers
September 1992
LM112 LM212 LM312 Operational Amplifiers
General Description
The LM112 series are micropower operational amplifiers
with very low offset-voltage and input-current errors
at
least a factor of ten better than FET amplifiers over a
b
55 C to
a
125 C temperature range Similar to the LM108
series that also use supergain transistors they differ in that
they include internal frequency compensation and have pro-
visions for offset adjustment with a single potentiometer
These amplifiers will operate on supply voltages of
g
2V to
g
20V drawing a quiescent current of only 300 mA Per-
formance is not appreciably affected over this range of volt-
ages so operation from unregulated power sources is easily
accomplished They can also be run from a single supply
like the 5V used for digital circuits
The LM112 series are the first IC amplifiers to improve reli-
ability by including overvoltage protection for the MOS com-
pensation capacitor Without this feature IC's have been
known to suffer catastrophic failure caused by short-dura-
tion overvoltage spikes on the supplies Unlike other inter-
nally-compensated IC amplifiers it is possible to overcom-
pensate with an external capacitor to increase stability mar-
gin
The LM212 is identical to the LM112 except that the LM212
has its performance guaranteed over a
b
25 C to
a
85 C
temperature range instead of
b
55 C to
a
125 C The
LM312 is guaranteed over a 0 C to
a
70 C temperature
range
Features
Y
Maximum input bias current of 3 nA over temperature
Y
Offset current less than 400 pA over temperature
Y
Low noise
Y
Guaranteed drift specifications
Connection Diagram
Metal Can Package
TL H 7751 4
Top View
Order Number LM112H LM212H LM312H or LM112H 883
See NS Package Number H08C
Auxiliary Circuits
Offset Balancing
TL H 7751 2
Overcompensation for Greater Stability Margin
TL H 7751 3
C1995 National Semiconductor Corporation
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
If Military Aerospace specified devices are required please contact the
National
Semiconductor
Sales
Office Distributors
for
availability
and
specifications
(Note 5)
LM112 LM212
LM312
Supply Voltage
g
20V
g
18V
Power Dissipation (Note 1)
500 mW
500 mW
Differential Input Current (Note 2)
g
10 mA
g
10 mA
Input Voltage (Note 3)
g
15V
g
15V
Output Short-Circuit Duration
Continuous
Continuous
Operating Temperature Range
LM112
b
55 C to
a
125 C
0 C to
a
70 C
LM212
b
25 C to
a
85 C
Storage Temperature Range
b
65 C to
a
150 C
b
65 C to
a
150 C
Lead Temperature (Soldering 10 sec )
300 C
300 C
ESD rating to be determined
Electrical Characteristics
(Note 4)
Parameter
Conditions
LM112 LM212
LM312
Units
Min
Typ
Max
Min
Typ
Max
Input Offset Voltage
T
A
e
25 C
0 7
2 0
2 0
7 5
mV
Input Offset Current
T
A
e
25 C
0 05
0 2
0 2
1
nA
Input Bias Current
T
A
e
25 C
0 8
2 0
1 5
7
nA
Input Resistance
T
A
e
25 C
30
70
10
40
MX
Supply Current
T
A
e
25 C
0 3
0 6
0 3
0 8
mA
Large Signal Voltage Gain
T
A
e
25 C V
S
e
g
15V
50
300
25
300
V mV
V
OUT
e
g
10V R
L
t
10 kX
Input Offset Voltage
3 0
10
mV
Average Temperature
Coefficient of Input
3 0
15
6 0
30
m
V C
Offset Voltage
Input Offset Current
0 4
1 5
nA
Average Temperature
Coefficient of Input
0 5
2 5
2 0
10
pA C
Offset Current
Input Bias Current
3 0
10
nA
Supply Current
T
A
e
125 C
0 15
0 4
mA
Large Signal Voltage Gain
V
S
e
g
15V V
OUT
e
g
10V
R
L
t
10 kX
25
15
V mV
Output Voltage Swing
V
S
e
g
15V R
L
e
10 kX
g
13
g
14
g
13
g
14
V
Input Voltage Range
V
S
e
g
15V
g
13 5
g
14
V
Common-Mode Rejection Ratio
85
100
80
100
dB
Supply Voltage Rejection Ratio
80
96
80
96
dB
Note 1
The maximum junction temperature of the LM112 is 150 C LM212 is 100 C and LM312 is 85 C For operating at elevated temperatures devices in the H08
package must be derated based on a thermal resistance of 160 C W junction to ambient or 20 C W junction to case
Note 2
The inputs are shunted with shunt diodes for overvoltage protection Therefore excessive current will flow if a differential input voltage in excess of 1V is
applied between the inputs unless some limiting resistance is used
Note 3
For supply voltages less than
g
15V the absolute maximum input voltage is equal to the supply voltage
Note 4
These specifications apply for
g
5V
s
V
S
s
g
20V and
b
55 C
s
T
A
s
a
125 C (LM112)
b
25 C
s
T
A
s
a
85 C (LM212)
g
5V
s
V
S
s
g
15V and
0 C
s
T
A
s a
70 C (LM312) unless otherwise noted
Note 5
Refer to RETS112X for LM112H military specifications
2
Typical Performance Characteristics
LM112 LM212
Input Currents
Offset Error
Drift Error
Input Noise Voltage
Power Supply Rejection
Output Impedance
Closed Loop
Voltage Gain
Output Swing
Supply Current
Response
Open Loop Frequency
Response
Large Signal Frequency
Response
Voltage Follower Pulse
TL H 7751 5
3
Typical Performance Characteristics
LM312
Input Currents
Offset Error
Drift Error
Input Noise Voltage
Power Supply Rejection
Output Impedance
Closed Loop
Voltage Gain
Output Swing
Supply Current
Response
Open Loop Frequency
Response
Large Signal Frequency
Response
Voltage Follower Pulse
TL H 7751 6
4
Schematic Diagram
TLH7751
1
5