LM3046
Transistor Array
General Description
The LM3046 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors
are
internally
connected
to
form
a
differentially-connected pair. The transistors are well suited
to a wide variety of applications in low power system in the
DC through VHF range. They may be used as discrete tran-
sistors in conventional circuits however, in addition, they pro-
vide the very significant inherent integrated circuit advan-
tages of close electrical and thermal matching. The LM3046
is supplied in a 14-lead molded small outline package.
Features
n
Two matched pairs of transistors
V
BE
matched
5 mV
Input offset current 2 A max at I
C
= 1 mA
n
Five general purpose monolithic transistors
n
Operation from DC to 120 MHz
n
Wide operating current range
n
Low noise figure:
3.2 dB typ at 1 kHz
Applications
n
General use in all types of signal processing systems
operating anywhere in the frequency range from DC to
VHF
n
Custom designed differential amplifiers
n
Temperature compensated amplifiers
Schematic and Connection Diagram
Small Outline Package
DS007950-1
Top View
Order Number LM3046M
See NS Package Number M14A
July 1999
LM3046
T
ransistor
Array
2000 National Semiconductor Corporation
DS007950
www.national.com
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications. (T
A
= 25C)
LM3046
Each
Total
Units
Transistor
Package
Power Dissipation:
T
A
= 25C
300
750
mW
T
A
= 25C to 55C
300
750
mW
T
A
>
55C
Derate at 6.67
mW/C
T
A
= 25C to 75C
mW
T
A
>
75C
mW/C
Collector to Emitter Voltage, V
CEO
15
V
Collector to Base Voltage, V
CBO
20
V
Collector to Substrate Voltage, V
CIO
(Note 2)
20
V
Emitter to Base Voltage, V
EBO
5
V
Collector Current, I
C
50
mA
Operating Temperature Range
-40C to +85C
Storage Temperature Range
-65C to +85C
Soldering Information
Dual-In-Line Package Soldering (10 Sec.)
260C
Small Outline Package
Vapor Phase (60 Seconds)
215C
Infrared (15 Seconds)
220C
See AN-450 "Surface Mounting Methods and Their Effect on Product Reliability" for other methods of soldering surface mount de-
vices.
Electrical Characteristics
(T
A
= 25C unless otherwise specified)
Parameter
Conditions
Limits
Units
Min
Typ
Max
Collector to Base Breakdown Voltage (V
(BR)CBO
)
I
C
= 10 A, I
E
= 0
20
60
V
Collector to Emitter Breakdown Voltage (V
(BR)CEO
)
I
C
= 1 mA, I
B
= 0
15
24
V
Collector to Substrate Breakdown
I
C
= 10 A, I
CI
= 0
20
60
V
Voltage (V
(BR)CIO
)
Emitter to Base Breakdown Voltage (V
(BR)EBO
)
I
E
10 A, I
C
= 0
5
7
V
Collector Cutoff Current (I
CBO
)
V
CB
= 10V, I
E
= 0
0.002
40
nA
Collector Cutoff Current (I
CEO
)
V
CE
= 10V, I
B
= 0
0.5
A
Static Forward Current Transfer
V
CE
= 3V
I
C
= 10 mA
100
Ratio (Static Beta) (h
FE
)
I
C
= 1 mA
40
100
I
C
= 10 A
54
Input Offset Current for Matched
V
CE
= 3V, I
C
= 1 mA
0.3
2
A
Pair Q
1
and Q
2
|I
O1
- I
IO2
|
Base to Emitter Voltage (V
BE
)
V
CE
= 3V
I
E
= 1 mA
0.715
V
I
E
= 10 mA
0.800
Magnitude of Input Offset Voltage for
V
CE
= 3V, I
C
= 1 mA
0.45
5
mV
Differential Pair |V
BE1
- V
BE2
|
Magnitude of Input Offset Voltage for Isolated
Transistors |V
BE3
- V
BE4
|, |V
BE4
- V
BE5
|,
|V
BE5
- V
BE3
|
V
CE
= 3V, I
C
= 1 mA
0.45
5
mV
Temperature Coefficient of Base to
Emitter Voltage
V
CE
= 3V, I
C
= 1 mA
-1.9
mV/C
Collector to Emitter Saturation Voltage (V
CE(SAT)
)
I
B
= 1 mA, I
C
= 10 mA
0.23
V
LM3046
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2
Electrical Characteristics
(Continued)
(T
A
= 25C unless otherwise specified)
Parameter
Conditions
Limits
Units
Min
Typ
Max
Temperature Coefficient of
Input Offset Voltage
V
CE
= 3V, I
C
= 1 mA
1.1
V/C
Note 1: "Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point
in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics
Parameter
Conditions
Min
Typ
Max
Units
Low Frequency Noise Figure (NF)
f = 1 kHz, V
CE
= 3V,
3.25
dB
I
C
= 100 A, R
S
= 1 k
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
fe
)
f = 1 kHz, V
CE
= 3V,
110
I
C
= 1 mA
Short Circuit Input Impednace (h
ie
)
3.5
k
Open Circuit Output Impedance (h
oe
)
15.6
mho
Open Circuit Reverse Voltage Transfer Ratio
(h
re
)
1.8 x 10
-4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
fe
)
f = 1 MHz, V
CE
= 3V,
31 - j 1.5
Input Admittance (Y
ie
)
I
C
= 1 mA
0.3+J 0.04
Output Admittance (Y
oe
)
0.001+j 0.03
Reverse Transfer Admittance (Y
re
)
See Curve
Gain Bandwidth Product (f
T
)
V
CE
= 3V, I
C
= 3 mA
300
550
Emitter to Base Capacitance (C
EB
)
V
EB
= 3V, I
E
= 0
0.6
pF
Collector to Base Capacitance (C
CB
)
V
CB
= 3V, I
C
= 0
0.58
pF
Collector to Substrate Capacitance (C
CI
)
V
CS
= 3V, I
C
= 0
2.8
pF
Typical Performance Characteristics
Typical Collector To Base
Cutoff Current vs Ambient
Temperature for Each
Transistor
DS007950-8
Typical Collector To Emitter
Cutoff Current vs Ambient
Temperature for Each
Transistor
DS007950-9
Typical Static Forward
Current-Transfer Ratio and
Beta Ratio for Transistors Q
1
and Q
2
vs Emitter Current
DS007950-10
LM3046
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3
Typical Performance Characteristics
(Continued)
Typical Input Offset Current
for Matched Transistor Pair
Q
1
Q
2
vs Collector Current
DS007950-11
Typical Static Base To Emitter
Voltage Characteristic and Input
Offset Voltage for Differential
Pair and Paired Isolated
Transistors vs Emitter Current
DS007950-12
Typical Base To Emitter
Voltage Characteristic for
Each Transistor vs Ambient
Temperature
DS007950-13
Typical Input Offset Voltage
Characteristics for Differential
Pair and Paired Isolated
Transistors vs Ambient
Temperature
DS007950-14
Typical Noise Figure vs
Collector Current
DS007950-15
Typical Noise Figure vs
Collector Current
DS007950-16
Typical Noise Figure vs
Collector Current
DS007950-17
Typical Normalized Forward
Current Transfer Ratio, Short
Circuit Input Impedance,
Open Circuit Output Impedance,
and Open Circuit Reverse
Voltage Transfer Ratio vs
Collector Current
DS007950-18
Typical Forward Transfer
Admittance vs Frequency
DS007950-19
LM3046
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4
Typical Performance Characteristics
(Continued)
Typical Input Admittance
vs Frequency
DS007950-20
Typical Output Admittance
vs Frequency
DS007950-21
Typical Reverse Transfer
Admittance vs Frequency
DS007950-22
Typical Gain-Bandwidth
Product vs Collector Current
DS007950-23
LM3046
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5
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