TL H 7950
LM3045LM3046LM3086
Transistor
Arrays
December 1994
LM3045 LM3046 LM3086 Transistor Arrays
General Description
The LM3045 LM3046 and LM3086 each consist of five
general purpose silicon NPN transistors on a common
monolithic substrate Two of the transistors are internally
connected to form a differentially-connected pair The tran-
sistors are well suited to a wide variety of applications in low
power system in the DC through VHF range They may be
used as discrete transistors in conventional circuits howev-
er in addition they provide the very significant inherent inte-
grated circuit advantages of close electrical and thermal
matching The LM3045 is supplied in a 14-lead cavity dual-
in-line package rated for operation over the full military tem-
perature range The LM3046 and LM3086 are electrically
identical to the LM3045 but are supplied in a 14-lead mold-
ed dual-in-line package for applications requiring only a lim-
ited temperature range
Features
Y
Two matched pairs of transistors
V
BE
matched
g
5 mV
Input offset current 2 mA max at I
C
e
1 mA
Y
Five general purpose monolithic transistors
Y
Operation from DC to 120 MHz
Y
Wide operating current range
Y
Low noise figure
3 2 dB typ at 1 kHz
Y
Full military
temperature range (LM3045)
b
55 C to
a
125 C
Applications
Y
General use in all types of signal processing systems
operating anywhere in the frequency range from DC to
VHF
Y
Custom designed differential amplifiers
Y
Temperature compensated amplifiers
Schematic and Connection Diagram
Dual-In-Line and Small Outline Packages
TL H 7950 1
Top View
Order Number LM3045J LM3046M LM3046N or LM3086N
See NS Package Number J14A M14A or N14A
C1995 National Semiconductor Corporation
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
(T
A
e
25 C)
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office
Distributors for availability and specifications
LM3045
LM3046 LM3086
Each
Total
Each
Total
Units
Transistor
Package
Transistor
Package
Power Dissipation
T
A
e
25 C
300
750
300
750
mW
T
A
e
25 C to 55 C
300
750
mW
T
A
l
55 C
Derate at 6 67
mW C
T
A
e
25 C to 75 C
300
750
mW
T
A
l
75 C
Derate at 8
mW C
Collector to Emitter Voltage V
CEO
15
15
V
Collector to Base Voltage V
CBO
20
20
V
Collector to Substrate Voltage V
CIO
(Note 1)
20
20
V
Emitter to Base Voltage V
EBO
5
5
V
Collector Current I
C
50
50
mA
Operating Temperature Range
b
55 C to
a
125 C
b
40 C to
a
85 C
Storage Temperature Range
b
65 C to
a
150 C
b
65 C to
a
85 C
Soldering Information
Dual-In-Line Package Soldering (10 Sec )
260 C
260 C
Small Outline Package
Vapor Phase (60 Seconds)
215 C
Infrared (15 Seconds)
220 C
See AN-450 ``Surface Mounting Methods and Their Effect on Product Reliability'' for other methods of soldering surface mount
devices
Electrical Characteristics
(T
A
e
25 C unless otherwise specified)
Limits
Limits
Parameter
Conditions
LM3045 LM3046
LM3086
Units
Min
Typ
Max
Min
Typ
Max
Collector to Base Breakdown Voltage (V
(BR)CBO
)
I
C
e
10 mA I
E
e
0
20
60
20
60
V
Collector to Emitter Breakdown Voltage (V
(BR)CEO
)
I
C
e
1 mA I
B
e
0
15
24
15
24
V
Collector to Substrate Breakdown
I
C
e
10 mA I
CI
e
0
20
60
20
60
V
Voltage (V
(BR)CIO
)
Emitter to Base Breakdown Voltage (V
(BR)EBO
)
I
E
10 mA I
C
e
0
5
7
5
7
V
Collector Cutoff Current (I
CBO
)
V
CB
e
10V I
E
e
0
0 002
40
0 002
100
nA
Collector Cutoff Current (I
CEO
)
V
CE
e
10V I
B
e
0
0 5
5
m
A
Static Forward Current Transfer
V
CE
e
3V
I
C
e
10 mA
100
100
Ratio (Static Beta) (h
FE
)
I
C
e
1 mA
40
100
40
100
I
C
e
10 mA
54
54
Input Offset Current for Matched
V
CE
e
3V I
C
e
1 mA
0 3
2
m
A
Pair Q
1
and Q
2
l
I
O1
b
I
IO2
l
Base to Emitter Voltage (V
BE
)
V
CE
e
3V
I
E
e
1 mA
0 715
0 715
V
I
E
e
10 mA
0 800
0 800
Magnitude of Input Offset Voltage for
V
CE
e
3V I
C
e
1 mA
0 45
5
mV
Differential Pair
l
V
BE1
b
V
BE2
l
Magnitude of Input Offset Voltage for Isolated
V
CE
e
3V I
C
e
1 mA
Transistors
l
V
BE3
b
V
BE4
l l
V
BE4
b
V
BE5
l
0 45
5
mV
l
V
BE5
b
V
BE3
l
Temperature Coefficient of Base to
V
CE
e
3V I
C
e
1 mA
Emitter Voltage
D
V
BE
D
T
J
b
1 9
b
1 9
mV C
Collector to Emitter Saturation Voltage (V
CE(SAT)
)
I
B
e
1 mA I
C
e
10 mA
0 23
0 23
V
Temperature Coefficient of
V
CE
e
3V I
C
e
1 mA
Input Offset Voltage
D
V
10
D
T
J
1 1
m
V C
Note 1
The collector of each transistor of the LM3045 LM3046 and LM3086 is isolated from the substrate by an integral diode The substrate (terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action
2
Electrical Characteristics
(Continued)
Parameter
Conditions
Min
Typ
Max
Units
Low Frequency Noise Figure (NF)
f
e
1 kHz V
CE
e
3V
3 25
dB
I
C
e
100 mA R
S
e
1 kX
LOW FREQUENCY SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
fe
)
f
e
1 kHz V
CE
e
3V
110 (LM3045 LM3046)
I
C
e
1 mA
(LM3086)
Short Circuit Input Impednace (h
ie
)
3 5
kX
Open Circuit Output Impedance (h
oe
)
15 6
m
mho
Open Circuit Reverse Voltage Transfer Ratio (h
re
)
1 8 x 10
b
4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
fe
)
f
e
1 MHz V
CE
e
3V
31
b
j 1 5
Input Admittance (Y
ie
)
I
C
e
1 mA
0 3
a
J 0 04
Output Admittance (Y
oe
)
0 001
a
j 0 03
Reverse Transfer Admittance (Y
re
)
See Curve
Gain Bandwidth Product (f
T
)
V
CE
e
3V I
C
e
3 mA
300
550
Emitter to Base Capacitance (C
EB
)
V
EB
e
3V I
E
e
0
0 6
pF
Collector to Base Capacitance (C
CB
)
V
CB
e
3V I
C
e
0
0 58
pF
Collector to Substrate Capacitance (C
CI
)
V
CS
e
3V I
C
e
0
2 8
pF
Typical Performance Characteristics
Temperature for Each
Cutoff Current vs Ambient
Typical Collector To Base
Transistor
Temperature for Each
Cutoff Current vs Ambient
Typical Collector To Emitter
Transistor
Beta Ratio for Transistors Q
1
and Q
2
vs Emitter Current
Current-Transfer Ratio and
Typical Static Forward
TL H 7950 2
Q
1
Q
2
vs Collector Current
for Matched Transistor Pair
Typical Input Offset Current
Offset Voltage for Differential
Voltage Characteristic and Input
Typical Static Base To Emitter
Transistors vs Emitter Current
Pair and Paired Isolated
TL H 7950 3
3
Typical Performance Characteristics
(Continued)
Each Transistor vs Ambient
Voltage Characteristic for
Typical Base To Emitter
Temperature
Pair and Paired Isolated
Characteristics for Differential
Typical Input Offset Voltage
Temperature
Transistors vs Ambient
Collector Current
Typical Noise Figure vs
TL H 7950 4
Typical Normalized Forward
Current Transfer Ratio Short
Circuit Input Impedance
Open Circuit Output Impedance
Collector Current
Typical Noise Figure vs
Collector Current
Typical Noise Figure vs
Collector Current
Voltage Transfer Ratio vs
and Open Circuit Reverse
TL H 7950 5
Admittance vs Frequency
Typical Forward Transfer
vs Frequency
Typical Input Admittance
vs Frequency
Typical Output Admittance
TL H 7950 6
4
Typical Performance Characteristics
(Continued)
Admittance vs Frequency
Typical Reverse Transfer
Product vs Collector Current
Typical Gain-Bandwidth
TL H 7950 7
Physical Dimensions
inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number LM3045J
NS Package Number J14A
5
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