LMX2330A/LMX2331A/LMX2332A
PLLatinum
TM
Dual Frequency Synthesizer for RF
Personal Communications
LMX2330A
2.5 GHz/510 MHz
LMX2331A
2.0 GHz/510 MHz
LMX2332A
1.2 GHz/510 MHz
General Description
The LMX233xA family of monolithic, integrated dual fre-
quency synthesizers, including prescalers, is to be used as a
local oscillator for RF and first IF of a dual conversion trans-
ceiver. It is fabricated using National's ABiC IV silicon
BiCMOS process.
The LMX233xA contains dual modulus prescalers. A 64/65
or a 128/129 prescaler (32/33 or 64/65 in the 2.5 GHz
LMX2330A) can be selected for the RF synthesizer and a
8/9 or a 16/17 prescaler can be selected for the IF synthe-
sizer. LMX233XA, which employs a digital phase locked loop
technique, combined with a high quality reference oscillator
and loop filters, provides the tuning voltages for voltage con-
trolled oscillators to generate very stable low noise RF and
IF local oscillator signals. Serial data is transferred into the
LMX233xA via a three wire interface (Data, Enable, Clock).
Supply voltage can range from 2.7V to 5.5V. The LMX233xA
family
features
very
low
current
consumption;
LMX2330A -- 13 mA at 3V, LMX2331A -- 12 mA at 3V,
LMX2332A -- 8 mA at 3V.
The LMX233xA are available in a TSSOP 20-pin surface
mount plastic package.
Features
n
2.7V to 5.5V operation
n
Low current consumption
n
Selectable powerdown mode: I
CC
= 1 A typical at 3V
n
Dual modulus prescaler:
LMX2330A (RF) 32/33 or 64/65
LMX2331A/32A (RF) 64/65 or 128/129
LMX2330A/31A/32A (IF) 8/9 or 16/17
n
Selectable charge pump TRI-STATE
mode
n
Selectable FastLock
TM
mode
n
Small outline, plastic, surface mount TSSOP 0.173"
wide package
Applications
n
Portable Wireless Communications (PCS/PCN, cordless)
n
Cordless and cellular telephone systems
n
Wireless Local Area Networks (WLANs)
n
Cable TV tuners (CATV)
n
Other wireless communication systems
Functional Block Diagram
TRI-STATE
is a registered trademark of National Semiconductor Corporation.
Fastlock
TM
, MICROWIRE
TM
and PLLatinum
TM
are trademarks of National Semiconductor Corporation.
DS012331-1
May 1999
LMX2330A/LMX2331A/LMX2332A
PLLatinum
Dual
Frequency
Synthesizer
for
RF
Personal
Communications
1999 National Semiconductor Corporation
DS012331
www.national.com
Connection Diagram
Pin Description
Pin
No.
Pin
Name
I/O
Description
1
V
CC
1
--
Power supply voltage input for RF analog and RF digital circuits. Input may range from 2.7V to
5.5V. V
CC
1 must equal V
CC
2. Bypass capacitors should be placed as close as possible to this
pin and be connected directly to the ground plane.
2
V
P
1
--
Power Supply for RF charge pump. Must be
V
CC
.
3
D
o
RF
O
Internal charge pump output. For connection to a loop filter for driving the input of an external
VCO.
4
GND
--
Ground for RF digital circuitry.
5
f
IN
RF
I
RF prescaler input. Small signal input from the VCO.
6
f
IN
RF
I
RF prescaler complementary input. A bypass capacitor should be placed as close as possible to
this pin and be connected directly to the ground plane. Capacitor is optional with some loss of
sensitivity.
7
GND
--
Ground for RF analog circuitry.
8
OSC
in
I
Oscillator input. The input has a V
CC
/2 input threshold and can be driven from an external CMOS
or TTL logic gate.
9
GND
--
Ground for IF digital, MICROWIRE
TM
, F
o
LD, and oscillator circuits.
10
F
o
LD
O
Multiplexed output of the RF/IF programmable or reference dividers, RF/IF lock detect signals
and Fastlock mode. CMOS output
(see Programmable Modes).
11
Clock
I
High impedance CMOS Clock input. Data for the various counters is clocked in on the rising
edge, into the 22-bit shift register.
12
Data
I
Binary serial data input. Data entered MSB first. The last two bits are the control bits. High
impedance CMOS input.
13
LE
I
Load enable high impedance CMOS input. When LE goes HIGH, data stored in the shift registers
is loaded into one of the 4 appropriate latches (control bit dependent(.
14
GND
--
Ground for IF analog circuitry.
15
f
IN
IF
I
IF prescaler complementry input. A bypass capacitor should be placed as close as possible to
this pin and be connected directly to the ground plane. Capacitor is optional with some loss of
sensitivity.
16
f
IN
IF
I
IF prescaler input. Small signal input from the VCO.
17
GND
--
Ground for IF digital, MICROWIRE, F
o
LD, and oscillator circuits.
18
D
o
IF
O
IF charge pump output. For connection to a loop filter for driving the input of an external VCO.
19
V
P
2
--
Power Supply for IF charge pump. Must be
V
CC
.
Thin Shrink Small Outline Package (TM)
DS012331-2
Order Number LMX2330ATM, LMX2331ATM or LMX2332ATM
NS Package Number MTC20
www.national.com
2
(Continued)
Pin Description
(Continued)
Pin
No.
Pin
Name
I/O
Description
20
V
CC
2
--
Power supply voltage input for IF analog, IF digital, MICROWIRE, F
o
LD, and oscillator circuits.
Input may range from 2.7V to 5.5V. V
CC
2 must equal V
CC
1. Bypass capacitors should be placed
as close as possible to this pin and be connected directly to the ground plane.
Block Diagram
DS012331-27
Notes:
The RF prescaler for the LMX2331A/32A is either 64/65 or 128/129, while the prescaler for the LMX2330A is 32/33 or 64/65.
V
CC
1 supplies power to the RF prescaler, N-counter, R-counter and phase detector. V
CC
2 supplies power to the IF prescaler, N-counter, phase detector,
R-counter along with the OSC
in
buffer, MICROWIRE, and F
o
LD. V
CC
1 and V
CC
2 are clamped to each other by diodes and must be run at the same voltage
level.
V
P
1 and V
P
2 can be run separately as long as V
P
V
CC
.
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3
Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC
-0.3V to +6.5V
V
P
-0.3V to +6.5V
Voltage on Any Pin
with GND = 0V (V
I
)
-0.3V to V
CC
+0.3V
Storage Temperature Range (T
S
)
-65C to +150C
Lead Temperature (solder 4 sec.) (T
L
)
+260C
Recommended Operating
Conditions
Power Supply Voltage
V
CC
2.7V to 5.5V
V
P
V
CC
to +5.5V
Operating Temperature (T
A
)
-40C to +85C
Electrical Characteristics
V
CC
= 3.0V, V
P
= 3.0V; -40C
<
T
A
<
85C, except as specified
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
I
CC
Power
Supply
Current
LMX2330A RF + IF
V
CC
= 2.7V to 5.5V
13
16.5
mA
LMX2330A RF Only
10
13
LMX2331A RF + IF
12
15.5
LMX2331A RF Only
9
12
LMX2332A IF + RF
8
10.5
LMX2332A RF Only
5
7
LMX233XA IF Only
3
3.5
I
CC-PWDN
Powerdown Current
1
25
A
f
IN
RF
Operating
Frequency
LMX2330A
0.5
2.5
GHz
LMX2331A
0.2
2.0
LMX2332A
0.1
1.2
f
IN
IF
Operating Frequency
LMX233XA
45
510
MHz
f
OSC
Oscillator Frequency
5
40
MHz
f
Phase Detector Frequency
10
MHz
Pf
IN
RF
RF Input Sensitivity
V
CC
= 3.0V
-15
+4
dBm
V
CC
= 5.0V
-10
+4
dBm
Pf
IN
IF
IF Input Sensitivity
V
CC
= 2.7V to 5.5V
-10
+4
dBm
V
OSC
Oscillator Sensitivity
OSC
in
0.5
V
PP
V
IH
High-Level Input Voltage
*
0.8 V
CC
V
V
IL
Low-Level Input Voltage
*
0.2 V
CC
V
I
IH
High-Level Input Current
V
IH
= V
CC
= 5.5V*
-1.0
1.0
A
I
IL
Low-Level Input Current
V
IL
= 0V, V
CC
= 5.5V*
-1.0
1.0
A
I
IH
Oscillator Input Current
V
IH
= V
CC
= 5.5V
100
A
I
IL
Oscillator Input Current
V
IL
= 0V, V
CC
= 5.5V
-100
A
V
OH
High-Level Output Voltage
I
OH
= -500 A
V
CC
- 0.4
V
V
OL
Low-Level Output Voltage
I
OL
= 500 A
0.4
V
t
CS
Data to Clock Set Up Time
See Data Input Timing
50
ns
t
CH
Data to Clock Hold Time
See Data Input Timing
10
ns
t
CWH
Clock Pulse Width High
See Data Input Timing
50
ns
t
CWL
Clock Pulse Width Low
See Data Input Timing
50
ns
t
ES
Clock to Load Enable Set Up Time
See Data Input Timing
50
ns
t
EW
Load Enable Pulse Width
See Data Input Timing
50
ns
*
Clock, Data and LE. Does not include f
IN
RF, f
IN
IF and OSC
IN
.
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which
the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Char-
acteristics. The guaranteed specifications apply only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD rating
<
2 keV and is ESD sensitive. Handling and assembly of this device should only
be done at ESD protected workstations.
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4
Charge Pump Characteristics
V
CC
= 3.0V, V
P
= 3.0V; -40C
<
T
A
<
85C, except as specified
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
I
Do-SOURCE
Charge Pump Output Current
V
Do
= V
P
/2, I
CPo
= HIGH**
-4.5
mA
I
Do-SINK
V
Do
= V
P
/2, I
CPo
= HIGH**
4.5
mA
I
Do-SOURCE
V
Do
= V
P
/2, I
CPo
= LOW**
-1.125
mA
I
Do-SINK
V
Do
= V
P
/2, I
CPo
= LOW**
1.125
mA
I
Do-TRI
Charge Pump TRI-STATE
Current
0.5V
V
Do
V
P
- 0.5V
-40c
<
T
A
<
85C
-2.5
2.5
nA
I
Do-SINK
vs
I
Do-SOURCE
CP Sink vs
Source Mismatch (Note 4)
V
Do
= V
P
/2
T
A
= 25C
3
10
%
I
Do
vs V
Do
CP Current vs Voltage
(Note 3)
0.5V
V
Do
V
P
- 0.5V
T
A
= 25C
10
15
%
I
Do
vs T
A
CP Current vs Temperature
(Note 5)
V
Do
= V
P
/2
-40C
<
T
A
<
85C
10
%
**
See PROGRAMMABLE MODES for I
CPo
description.
Note 3: See charge pump current specification definitions below.
Note 4: See charge pump current specification definitions below.
Note 5: See charge pump current specification definitions below.
www.national.com
5
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