NTE11 (NPN) & NTE12 (PNP)
Silicon Complementary Transistors
High Current Amplifier
Description:
The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case de-
signed for use in lowfrequency output amplifier, DC converter, and strobe applications.
Features:
D
High Collector Current: I
C
= 5A Max
D
Low CollectorEmitter Saturation Voltage
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
NTE11
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE12
27V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
NTE11
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE12
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
D
750mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Collector Cutoff Current
NTE11
I
CBO
V
CB
= 10V, I
E
= 0
0.1
A
NTE12
V
CB
= 10V, I
E
= 0
100
nA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Emitter Cutoff Current
NTE11
I
EBO
V
EB
= 7V, I
C
= 0
0.1
A
NTE12
V
EB
= 5V, I
C
= 0
1.0
A
CollectorEmitter Voltage
NTE11
V
CEO
I
C
= 1mA, I
B
= 0
20
V
NTE12
I
C
= 1mA, I
B
= 0
18
V
EmitterBase Voltage
V
EBO
I
E
= 10
A, I
C
= 0
7
V
DC Current Gain
NTE11
h
FE1
V
CE
= 2V, I
C
= 500mA, Note 1
340
600
NTE12
V
CE
= 2V, I
C
= 2A, Note 1
180
625
NTE11 Only
h
FE2
V
CE
= 2V, I
C
= 2A, Note 1
150
CollectorEmitter Saturation Voltage
NTE11
V
CE(sat)
I
C
= 3A, I
B
= 100mA, Note 1
1
V
NTE12
I
C
= 3A, I
B
= 100mA, Note 1
0.4
1.0
V
Transition Frequency
NTE11
f
T
V
CB
= 6V, I
E
= 50mA, f = 200MHz
150
MHz
NTE12
V
CB
= 6V, I
E
= 50mA, f = 200MHz
120
MHz
Collector Output Capacitance
NTE11
C
ob
V
CB
= 20V, I
E
= 0, f = 1MHz
50
pF
NTE12
V
CB
= 20V, I
E
= 0, f = 1MHz
60
pF
Note 1. Pulse measurement
.021 (.445) Dia Max
E C B
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
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