NTE2380 (NCh) & NTE2381 (PCh)
Complementary Silicon Gate MOSFETs
Enhancement Mode, High Speed Switch
Description:
The NTE2380 (NCh) and NTE2381 (PCh) are complementary TMOS power FETs in a TO220 type
package designed for high voltage, high speed power switching applications such as switching regu-
lators, converters, solenoid, and relay drivers.
Features:
D
Silicon Gate for Fast Switching Speeds
D
Rugged SOA is Power Dissipation Limited
D
SourcetoDrain Diode Characterized for Use With Inductive Loads
Absolute Maximim Ratings:
DrainSource Voltage, V
DSS
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage (R
GS
= 1M
), V
DGR
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous
NTE2380
2.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381
2.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed
NTE2380
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
NTE2380
40W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.32W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381
75W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.6W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
NTE2380
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
NTE2380
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
62.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
NTE2380
3.12
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381
1.67
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
NTE2380
+300
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381
+275
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
DrainSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0, I
D
= 0.25mA
500
V
Zero Gate Voltage Drain Current
NTE2380
I
DSS
V
DS
= 500V, V
GS
= 0
0.25
mA
NTE2381
0.2
mA
NTE2380 & NTE2381
V
DS
= 400V, V
GS
= 0, T
J
= +125
C
1.0
mA
GateBody Leakage Current, Forward
NTE2380
I
GSSF
V
GSF
= 20V, V
DS
= 0
500
nA
NTE2381
100
nA
GateBody Leakage Current, Reverse
NTE2380
I
GSSR
V
GSF
= 20V, V
DS
= 0
500
nA
NTE2381
100
nA
ON Characteristics (Note 1)
Gate Threshold Voltage
NTE2380
V
GS(th)
V
DS
= V
GS
I
D
= 0.25mA
2.0
4.0
V
NTE2381
I
D
= 1mA
2.0
4.5
V
Static DrainSource OnResistance
NTE2380
r
DS(on)
V
GS
= 10V, I
D
= 1A
3
NTE2381
6
Forward Transconductance
NTE2380
g
FS
I
D
= 1A
V
DS
7.5V
1
mhos
NTE2381
V
DS
= 15V
0.5
mhos
Dynamic Characteristics
Input Capacitance
NTE2380
C
iss
V
DS
= 25V, V
GS
= 0, f = 1MHz
400
pF
NTE2381
100
pF
Output Capacitance
NTE2380
C
oss
150
pF
NTE2381
200
pF
Reverse Transfer Capacitance
NTE2380
C
rss
40
pF
NTE2381
80
pF
Switching Characteristics (Note 1)
TurnOn Time
NTE2380
t
d(on)
I
D
= 1A,
V
DD
[
200V
60
ns
NTE2381
R
gen
= 50
V
DS
= 125V
50
ns
Rise Time
NTE2380
t
r
V
DD
[
200V
50
ns
NTE2381
V
DS
= 125V
100
ns
TurnOff Time
NTE2380
t
d(off)
V
DD
[
200V
60
ns
NTE2381
V
DS
= 125V
150
ns
Fall Time
NTE2380
t
f
V
DD
[
200V
30
ns
NTE2381
V
DS
= 125V
50
ns
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Switching Characteristics (Cont'd) (Note 1)
Total Gate Charge
NTE2380
Q
g
V
GS
= 10V, V
DS
= 400V,
12
15
ns
NTE2381
I
D
= Rated I
D
20
25
ns
GateSource Charge
NTE2380
Q
gs
6
ns
NTE2381
10
ns
GateDrain Charge
NTE2380
Q
gd
6
ns
NTE2381
10
ns
Source Drain Diode Characteristics (Note 1)
Forward OnVoltage
NTE2380
V
SD
I
S
= Rated I
D
, V
GS
= 0
1.6
V
NTE2381
1.8
2.5
V
Forward TurnOn Time
t
on
Limited by stray inductance
Reverse Recovery Time
NTE2380
t
rr
500
ns
NTE2381
120
ns
Internal Package Inductance
Internal Drain Inductance
L
d
Measured from contact screw on
tab to center of die
3.5
nH
Measured from the drain lead
0.25" from package to center of die
4.5
nH
Internal Source Inductance
L
s
Measured from the source lead
0.25" from package to center of pad
7.5
nH
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
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