NTE2336
Silicon NPN Transistor
Darlington Switch
w
/Internal Damper
& Zener Diode
Features:
D
60V Zener Diode BuiltIn Between Collector and Base
D
Low Fluctuation in Breakdown Voltages
D
High Energy Handling Capability
D
High Speed Switching
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
60
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
60
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
C), P
C
45W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
A
= +25
C), P
C
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 50V, I
E
= 0
100
A
Emitter Cutoff Current
I
EBO
V
EB
= 7V, I
C
= 0
2
mA
CollectorEmitter Voltage
V
CEO
I
C
= 5mA, I
B
= 0
50
70
V
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 4A
2000
5000
V
CE
= 3V, I
C
= 8A
500
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 4A, I
B
= 8mA
1.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 4A, I
B
= 8mA
2.0
V
Transition Frequency
f
T
V
CE
= 10V, I
C
= 500mA, f = 1MHz
20
MHz
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