NTE7144
Integrated Circuit
BIMOS Operational Amplifier
w
/MOSFET Input, Bipolar Output
Description:
The NTE7144 is an integrated circuit operational amplifier in an 8Lead MiniDIP type package that
combines the advantages of highvoltage PMOS transistors with highvoltage bipolar transistors on
a single monolithic chip. This device features gateprotected MOSFET (PMOS) transistors in the in-
put circuit to provide veryhighinput impedance, verylowinput current, and highspeed perfor-
mance. The NTE7144 operates at supply voltages from 4V to 36V (either single or dual supply) and
is internally phasecompensated to achieve stable operation in unitygain follower operation.
The use of PMOS fieldeffect transistors in the input stage results in commonmode inputvoltage
capability down to 0.5V below the negativesupply terminal, an important attribute for singlesupply
applications. The output stage uses bipolar transistors and includes builtin protection against dam-
age from loadterminal shortcircuiting to either supplyrail or to GND.
Features:
D
MOSFET Input Stage:
Very High Input Impedance
Very Low Input Current
Wide CommonMode Input Voltage Range
Output Swing Complements Input CommonMode Range
D
Directly Replaces Industry Type 741 in Most Applications
Applications:
D
GroundReferenced SingleSupply Amplifiers in Automobile and Portable Instrumentation
D
Sample and Hold Amplifiers
D
LongDuration Timers/Multivibrators (Microseconds Minutes Hours)
D
Photocurrent Instrumentation
D
Peak Detectors
D
Active Filters
D
Comparators
D
Interface in 5V TTL Systems and other LowSupply Voltage Systems
D
All Standard Operational Amplifier Applications
D
Function Generators
D
Tone Controls
D
Power Supplies
D
Portable Instruments
D
Intrusion Alarm Systems
Absolute Maximum Ratings:
DC Supply Voltage (Between V+ and V Terminals)
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DifferentialMode Input Voltage
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CommonMode DC Input Voltage
(V+ +8V) to (V 0.5V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
InputTerminal Current
1mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation (Without Heatsink), P
D
630mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above +55
C
6.67mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation (With Heatsink), P
D
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above +55
C
16.7mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
55
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from case, 10sec max), T
L
+265
C
. . . . . . . . . . . . . . . . .
Output ShortCircuit Duration (Note 1)
Unlimited
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Short circuit may be applied to GND or to either supply.
Electrical Characteristics: (T
A
= +25
C, V+ = +15V, V = 15V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
|V
IO
|
2
5
mV
Input Offset Current
|I
IO
|
0.5
20
pA
Input Current
I
I
10
40
pA
LargeSignal Voltage Gain
A
OL
Note 2
20k
100k
V/V
86
100
dB
CommonMode Rejection Ratio
CMRR
32
320
V/V
70
90
dB
CommonMode InputVoltage
Range
V
ICR
15
15.5
to
+12.5
+12
V
Power Supply Rejection Ratio
V
IO
/
V
100
150
V/V
PSSR
76
80
dB
Maximum Output Voltage
V
OM
+
R
L
= 2k
+12
+13
V
V
OM
14
14.4
V
Supply Current
I+
4
6
mA
Device Dissipation
P
D
120
180
mW
Input Offset Voltage Temp. Drift
V
IO
/
T
6
A/
C
Input Resistance
R
I
1.5
T
Input Capacitance
C
I
4
pF
Output Resistance
R
O
60
Equivalent Wideband Input Noise
Voltage
e
n
BW = 140kHz, R
S
= 1M
48
V
Equivalent Input Noise Voltage
e
n
R
S
= 100
f 1kHz
40
nV/
Hz
f = 10kHz
12
nV/
Hz
ShortCircuit Current to Opposite Supply
Source
I
OM
+
40
mA
Sink
I
OM
18
mA
Note 2. V
O
= 26V
PP
, +12V, 14V and R
L
= 2k
.
Electrical Characteristics (Cont'd): (T
A
= +25
C, V+ = +15V, V = 15V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
GainBandwidth Product
f
T
4.5
MHz
Slew Rate
SR
9
V/
s
Sink Current from Pin8 to Pin4 to Swing
Output Low
220
A
Transient Response:
Rise Time
t
r
R
L
= 2k
, C
L
= 100pF
0.08
s
Overshoot
10
%
Setting Time at 10V
PP
1mV
t
s
R
L
= 2k
, C
L
= 100pF,
4.5
s
10mV
Voltage Follower
1.4
s
Note 2. V
O
= 26V
PP
, +12V, 14V and R
L
= 2k
.
Electrical Characteristics: (T
A
= +25
C, V+ = +5V, V = 5V unless otherwise specified)
Input Offset Voltage
|V
IO
|
2
mV
Input Offset Current
|I
IO
|
0.1
pA
Input Current
I
I
2
pA
Input Resistance
R
I
1
T
LargeSignal Voltage Gain
A
OL
100k
V/V
100
dB
CommonMode Rejection Ratio
CMRR
32
V/V
90
dB
CommonMode InputVoltage Range
V
ICR
0.5
V
+2.6
V
Power Supply Rejection Ratio
V
IO
/
V
100
V/V
PSSR
80
dB
Maximum Output Voltage
V
OM
+
3.0
V
V
OM
0.13
V
Maximum Output Current:
Source
I
OM
+
10
mA
Sink
I
OM
1
mA
Slew Rate
SR
7
V/
s
GainBandwidth Product
f
T
3.7
MHz
Supply Current
I+
1.6
mA
Device Dissipation
P
D
8
mW
Sink Current from Pin8 to Pin4 to
Swing Output Low
200
A
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