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Электронный компонент: MSM518121A-80

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Semiconductor
MSM518121A
1/33
Semiconductor
MSM518121A
131,072-Word
8-Bit Multiport DRAM
DESCRIPTION
The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit
dynamic random access memory, RAM port, and a 256-word by 8-bit static serial access memory,
SAM port. The RAM port and SAM port operate independently and asynchronously.
The MSM518121A supports three types of operation: random access to and from the RAM port,
high speed serial access to and from the SAM port and bidirectional transfer of data between any
selected row in the RAM port and the SAM port. The RAM port and the SAM port can be accessed
independently except when data is being transferred between them internally.
FEATURES
Single power supply of 5 V
10% with a built-in VBB generator
All inputs and outputs :TTL compatible
Multiport organization
RAM port : 128K word 8 bits
SAM port :
256 word 8 bits
RAM port
Fast page mode, Read modify write
CAS before RAS refresh, Hidden refresh
RAS only refresh, Standard write-per-bit
SAM port
High speed serial
Read / Write capabillity
Fully static register
256 tap location
RAM-SAM bidirectional, Read / Write / Pseudo write, Real time read transfer
Package options:
40-pin 475 mil plastic ZIP
(ZIP40-P-475-1.27)
(Product : MSM518121A-xxZS)
40-pin 400 mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM518121A-xxJS)
xx indicates speed rank.
PRODUCT FAMILY
MSM518121A-70
MSM518121A-80
MSM518121A-10
Access Time
RAM
SAM
70 ns
25 ns
80 ns
25 ns
100 ns
25 ns
Cycle Time
RAM
SAM
140 ns
30 ns
150 ns
30 ns
180 ns
30 ns
Power Dissipation
Operating
120 mA
110 mA
100 mA
Standby
8 mA
8 mA
8 mA
Family
This version: Jan. 1998
Previous version: Dec. 1996
Semiconductor
MSM518121A
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PIN CONFIGURATION (TOP VIEW)
W5/IO5
W7/IO7
SE
SIO6
SIO8
SC
SIO2
SIO4
W1/IO1
W3/IO3
W4/IO4
WB/WE
A8
V
SS2
A5
NC
A7
A2
A0
CAS
W6/IO6
W8/IO8
SIO5
SIO7
V
SS1
SIO1
SIO3
DT/OE
W2/IO2
NC
V
CC1
RAS
A6
NC
A4
V
CC2
A3
A1
NC
NC
SC
SIO1
SIO2
SIO3
SIO4
DT/OE
W1/IO1
W2/IO2
W3/IO3
W4/IO4
V
CC1
WB/WE
NC
RAS
NC
A8
A6
A5
A4
V
CC2
V
SS1
SIO8
SIO7
SIO6
SIO5
SE
W8/IO8
W7/IO7
W6/IO6
W5/IO5
V
SS2
NC
NC
CAS
NC
A0
A1
A2
A3
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
40-Pin Plastic SOJ
40-Pin Plastic ZIP
A0 - A8
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DT / OE
Data Transfer / Output Enable
WB / WE
Write per Bit / Write Enable
W1/IO1 - W8/IO8
Write Mask / Data IN, OUT
SC
Serial Clock
SE
Serial Enable
SIO1 - SIO8
Serial Input / Output
V
CC
/ V
SS
Power Supply (5 V) / Ground (0 V)
NC
No Connection
Pin Name
Function
Note:
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
Semiconductor
MSM518121A
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BLOCK DIAGRAM
RAS
CAS
DT
/
OE
WB
/
WE
SC
SE
Mask Register
Write/WPB Control
Column Decoder
512 256 8
Cell Array
Row Decoder
Serial
Address
Counter
Column
Address
Buffer
Row
Address
Buffer
Refresh
Counter
V
CC
A0 - A8
Sense Amplifier
SAM
Selector
I/O Buffer
(SAM)
W1/IO1
- W8/IO8
SIO1
- SIO8
Timing Generator
I/O Buffer
(RAM)
V
SS
Semiconductor
MSM518121A
4/33
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Input Output Voltage
V
T
Ta = 25C
1.0 to 7.0
V
Output Current
l
OS
Ta = 25C
50
mA
Power Dissipation
P
D
Ta = 25C
1
W
Operating Temperature
T
opr
--
0 to 70
C
Storage Temperature
T
stg
--
55 to 150
C
(Note : 16)
Recommended Operating Conditions
Parameter
Symbol
Unit
Power Supply Voltage
V
CC
V
Input High Voltage
V
IH
V
Input Low Voltage
V
IL
V
Min.
4.5
2.4
1.0
Typ.
5.0
--
--
Max.
5.5
6.5
0.8
(Ta = 0C to 70C) (Note : 17)
Capacitance
Parameter
Symbol
Unit
Input Capacitance
C
I
pF
Input / Output Capacitance
C
I/O
pF
Min.
--
--
Max.
7
9
(V
CC
= 5 V 10%, f = 1 MHz, Ta = 25C)
Note :
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter
Output "H" Level Voltage
Output "L" Level Voltage
Input Leakage Current
Output Leakage Current
Symbol
V
OH
V
OL
I
LI
I
LO
Condition
I
OH
= 2 mA
I
OL
= 2 mA
0 V
IN
V
CC
All other pins
not under test = 0 V
0 V
OUT
5.5 V
Output Disable
Min.
Max.
2.4
--
10
10
--
0.4
10
10
V
mA
Unit
Semiconductor
MSM518121A
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DC Characteristics 2
-70
-80
-10
Unit Note
Symbol
Item (RAM)
SAM
Max. Max. Max.
85
75
65
mA
1, 2
I
CC1
Operating Current
Standby
120
110
100
1, 2
(RAS, CAS Cycling, t
RC
= t
RC
min.)
Active
8
8
8
Standby Current
50
45
40
1, 2
(RAS, CAS = V
IH
)
85
75
65
1, 2
RAS Only Refresh Current
120
110
100
1, 2
(RAS Cycling, CAS = V
IH
, t
RC
= t
RC
min.)
70
65
60
1, 2
Page Mode Current
120
110
100
1, 2
(RAS = V
IL
, CAS Cycling, t
PC
= t
PC
min.)
85
75
65
1, 2
CAS before RAS Refresh Current
120
110
100
1, 2
(RAS Cycling, CAS before RAS, t
RC
= t
RC
min.)
85
75
65
1, 2
Data Transfer Current
120
110
100
1, 2
(RAS, CAS Cycling, t
RC
= t
RC
min.)
I
CC1A
I
CC2
I
CC2A
I
CC3
I
CC3A
I
CC4
I
CC4A
I
CC5
I
CC5A
I
CC6
I
CC6A
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
(V
CC
= 5 V 10%, Ta = 0C to 70C)
3