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Semiconductor Components Industries, LLC, 2005

**October, 2005 - Rev. 9**

**1**

Publication Order Number:

**1N5817/D**

1N5817, 1N5818, 1N5819

**1N5817 and 1N5819 are Preferred Devices**

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area

metal-to-silicon power diode. State-of-the-art geometry features

chrome barrier metal, epitaxial construction with oxide passivation

and metal overlap contact. Ideally suited for use as rectifiers in

low-voltage, high-frequency inverters, free wheeling diodes, and

polarity protection diodes.

**Features**

Extremely Low V

F

Low Stored Charge, Majority Carrier Conduction

Low Power Loss/High Efficiency

Lead Temperature for Soldering Purposes:

260

C Max for 10 Seconds

These are Pb-Free Devices

**Mechanical Characteristics**

Case: Epoxy, Molded

Weight: 0.4 Gram (Approximately)

Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

Polarity: Cathode Indicated by Polarity Band

ESD Ratings: Machine Model = C (>400 V)

Human Body Model = 3B (>8000 V)

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

**AXIAL LEAD**

**CASE 59-10**

**DO-41**

**PLASTIC**

**SCHOTTKY BARRIER**

**RECTIFIERS**

1.0 AMPERE

**20, 30 and 40 VOLTS**

**Preferred** devices are recommended choices for future use

and best overall value.

**MARKING DIAGRAM**

See detailed ordering and shipping information on page 2 of

this data sheet.

**ORDERING INFORMATION**

**http://onsemi.com**

A

= Assembly Location

1N581x = Device Number

x = 7, 8, or 9

YY

= Year

WW

= Work Week

G

= Pb-Free Package

A

1N581x

YYWW

G

G

(Note: Microdot may be in either location)

**1N5817, 1N5818, 1N5819**

**http://onsemi.com**

**2**

**MAXIMUM RATINGS**

**Rating**

**Symbol**

**1N5817**

**1N5818**

**1N5819**

**Unit**

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V

RRM

V

RWM

V

R

20

30

40

V

Non-Repetitive Peak Reverse Voltage

V

RSM

24

36

48

V

RMS Reverse Voltage

V

R(RMS)

14

21

28

V

Average Rectified Forward Current (Note 1), (V

R(equiv)

0.2 V

R

(dc), T

L

= 90

C,

R

q

JA

= 80

C/W, P.C. Board Mounting, see Note 2, T

A

= 55

C)

I

O

1.0

A

Ambient Temperature (Rated V

R

(dc), P

F(AV)

= 0, R

q

JA

= 80

C/W)

T

A

85

80

75

C

Non-Repetitive Peak Surge Current, (Surge applied at rated load conditions,

half-wave, single phase 60 Hz, T

L

= 70

C)

I

FSM

25 (for one cycle)

A

Operating and Storage Junction Temperature Range (Reverse Voltage applied)

T

J

, T

stg

-65 to +125

C

Peak Operating Junction Temperature (Forward Current applied)

T

J(pk)

150

C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

**THERMAL CHARACTERISTICS**

(Note 1)

**Characteristic**

**Symbol**

**Max**

**Unit**

Thermal Resistance, Junction-to-Ambient

R

q

JA

80

C/W

**ELECTRICAL CHARACTERISTICS **

(T

L

= 25

C unless otherwise noted) (Note 1)

**Characteristic**

**Symbol**

**1N5817**

**1N5818**

**1N5819**

**Unit**

Maximum Instantaneous Forward Voltage (Note 2)

(i

F

= 0.1 A)

(i

F

= 1.0 A)

(i

F

= 3.0 A)

v

F

0.32

0.45

0.75

0.33

0.55

0.875

0.34

0.6

0.9

V

Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)

(T

L

= 25

C)

(T

L

= 100

C)

I

R

1.0

10

1.0

10

1.0

10

mA

1. Lead Temperature reference is cathode lead 1/32 in from case.

2. Pulse Test: Pulse Width = 300

m

s, Duty Cycle = 2.0%.

**ORDERING INFORMATION**

**Device**

**Package**

**Shipping**

1N5817

Axial Lead*

1000 Units / Bag

1N5817G

Axial Lead*

1000 Units / Bag

1N5817RL

Axial Lead*

5000 / Tape & Reel

1N5817RLG

Axial Lead*

5000 / Tape & Reel

1N5818

Axial Lead*

1000 Units / Bag

1N5818G

Axial Lead*

1000 Units / Bag

1N5818RL

Axial Lead*

5000 / Tape & Reel

1N5818RLG

Axial Lead*

5000 / Tape & Reel

1N5819

Axial Lead*

1000 Units / Bag

1N5819G

Axial Lead*

1000 Units / Bag

1N5819RL

Axial Lead*

5000 / Tape & Reel

1N5819RLG

Axial Lead*

5000 / Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*This package is inherently Pb-Free.

125

115

105

95

85

75

20

15

10

7.0

5.0

4.0

3.0

2.0

T R

, REFERENCE

TEMPERA

TURE (

C)

V

R

, DC REVERSE VOLTAGE (VOLTS)

**Figure 1. Maximum Reference Temperature**

**1N5817**

40

30

23

60

80

R

qJA

(C/W) = 110

125

115

105

95

85

75

20

15

10

7.0

5.0

30

4.0

3.0

40

30

23

R

qJA

(C/W) = 110

80

60

**Figure 2. Maximum Reference Temperature**

**1N5818**

125

115

105

95

85

75

20

15

10

7.0

5.0

30

4.0

40

R

qJA

(C/W) = 110

60

80

**Figure 3. Maximum Reference Temperature**

**1N5819**

40

30

23

T R

, REFERENCE

TEMPERA

TURE (

C

)

V

R

, DC REVERSE VOLTAGE (VOLTS)

V

R

, DC REVERSE VOLTAGE (VOLTS)

T R

, REFERENCE

TEMPERA

TURE (

C)

**1N5817, 1N5818, 1N5819**

**http://onsemi.com**

**3**

**NOTE 1. -- DETERMINING MAXIMUM RATINGS**

Reverse power dissipation and the possibility of thermal

runaway must be considered when operating this rectifier at

reverse voltages above 0.1 V

RWM

. Proper derating may be

accomplished by use of equation (1).

T

A(max)

=

where T

A(max)

=

T

J(max)

=

P

F(AV)

=

P

R(AV)

=

R

q

JA

=

T

J(max)

- R

q

JA

P

F(AV)

- R

q

JA

P

R(AV)

Maximum allowable ambient temperature

Maximum allowable junction temperature

(1)

Average forward power dissipation

(125

C or the temperature at which thermal

runaway occurs, whichever is lowest)

Average reverse power dissipation

Junction-to-ambient thermal resistance

Figures 1, 2, and 3 permit easier use of equation (1) by

taking reverse power dissipation and thermal runaway into

consideration. The figures solve for a reference temperature

as determined by equation (2).

T

R

= T

J(max)

- R

q

JA

P

R(AV)

(2)

Substituting equation (2) into equation (1) yields:

T

A(max)

= T

R

- R

q

JA

P

F(AV)

(3)

Inspection of equations (2) and (3) reveals that T

R

is the

ambient temperature at which thermal runaway occurs or

where T

J

= 125

C, when forward power is zero. The

transition from one boundary condition to the other is

evident on the curves of Figures 1, 2, and 3 as a difference

in the rate of change of the slope in the vicinity of 115

C. The

data of Figures 1, 2, and 3 is based upon dc conditions. For

use in common rectifier circuits, Table 1 indicates suggested

factors for an equivalent dc voltage to use for conservative

design, that is:

(4)

V

R(equiv)

= V

in(PK)

x F

The factor F is derived by considering the properties of the

various rectifier circuits and the reverse characteristics of

Schottky diodes.

EXAMPLE: Find T

A(max)

for 1N5818 operated in a

12-volt dc supply using a bridge circuit with capacitive filter

such that I

DC

= 0.4 A (I

F(AV)

= 0.5 A), I

(FM)

/I

(AV)

= 10, Input

Voltage = 10 V

(rms)

, R

qJA

= 80

C/W.

Step 1. Find V

R(equiv)

. Read F = 0.65 from Table 1,

Step 1. Find

V

R(equiv)

= (1.41)(10)(0.65) = 9.2 V.

Step 2. Find T

R

from Figure 2. Read T

R

= 109

C

Step 1. Find

@ V

R

= 9.2 V and R

q

JA

= 80

C/W.

Step 3. Find P

F(AV)

from Figure 4. **Read P

F(AV)

= 0.5 W

@

I

(FM)

I

(AV)

= 10 and IF(AV) = 0.5 A.

Step 4. Find T

A(max)

from equation (3).

Step 4. Find

T

A(max)

= 109 - (80) (0.5) = 69

C.

**Values given are for the 1N5818. Power is slightly lower for the

1N5817 because of its lower forward voltage, and higher for the

1N5819.

**Circuit**

**Load**

**Half Wave**

**Resistive**

**Capacitive***

**Full Wave, Bridge**

**Resistive**

**Capacitive**

**Full Wave, Center Tapped* **

**Resistive**

**Capacitive**

Sine Wave

Square Wave

0.5

0.75

1.3

1.5

0.5

0.75

0.65

0.75

1.0

1.5

1.3

1.5

**Note that V

R(PK)

2.0 V

in(PK)

.

Use line to center tap voltage for V

in

.

**Table 1. Values for Factor F**

**1N5817, 1N5818, 1N5819**

**http://onsemi.com**

**4**

7/8

20

40

50

90

80

70

60

30

10

3/4

5/8

1/2

3/8

1/4

1.0

1/8

1

R

JL

, THERMAL

RESIST

ANCE,

JUNCTION-T

O-LEAD

(

C/W)

BOTH LEADS TO HEATSINK,

EQUAL LENGTH

MAXIMUM

TYPICAL

L, LEAD LENGTH (INCHES)

**Figure 4. Steady-State Thermal Resistance**

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

4.0

2.0

1.0

0.8

0.6

0.4

0.2

P F(A

V)

,

A

VERAGE POWER DISSIP

A

T

ION (W

A

TTS)

I

F(AV)

, AVERAGE FORWARD CURRENT (AMP)

dc

SQUARE WAVE

T

J

125C

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

10k

2.0k

1.0k

500

200

100

50

20

10

5.0

2.0

1.0

0.5

0.2

0.1

5.0k

r(t), TRANSIENT

THERMAL

RESIST

ANCE

(NORMALIZED)

Z

qJL(t)

= Z

qJL

r(t)

P

pk

P

pk

t

p

t

1

TIME

**DUTY CYCLE, D = t**

**p**

**/t**

**1**

**PEAK POWER, P**

**pk**

**, is peak of**

**an**

equivalent square power pulse.

D

T

JL

= P

pk

R

q

JL

[D + (1 - D)

r(t

1

+ t

p

) + r(t

p

) - r(t

1

)] where

D

T

JL

= the increase in junction temperature above the lead temperature

r(t) = normalized value of transient thermal resistance at time, t, from Figure 6,

i.e.:

r(t) =

r(t

1

+ t

p

) = normalized value of transient thermal resistance at time, t

1

+ t

p

.

t, TIME (ms)

**NOTE 2. -- MOUNTING DATA**

Data shown for thermal resistance junction-to-ambient

(R

qJA

) for the mountings shown is to be used as typical guide-

line values for preliminary engineering, or in case the tie

point temperature cannot be measured.

**TYPICAL VALUES FOR R**

q

**JA**

** IN STILL AIR**

**Mounting**

**Method**

**1/8**

**1/4**

**1/2**

**3/4**

**Lead Length, L (in)**

**R**

q

**JA**

**1**

2

3

52

67

65

80

72

87

85

100

C/W

C/W

C/W

50

**Mounting Method 1**

P.C. Board with

1-1/2

x 1-1/2

copper surface.

**Mounting Method 3**

P.C. Board with

1-1/2

x 1-1/2

copper surface.

L

L

L = 3/8

**BOARD GROUND**

**PLANE**

VECTOR PIN MOUNTING

L

L

**Mounting Method 2**

5

10

20

Sine Wave

I

(FM)

I

(AV)

= (Resistive Load)

Capacitive

Loads

{

**Figure 5. Forward Power Dissipation**

**1N5817-19**

**Figure 6. Thermal Response**

**1N5817, 1N5818, 1N5819**

**http://onsemi.com**

**5**

100

70

5.0

30

20

10

7.0

5.0

3.0

20

7.0

10

3.0

2.0

30

1.0

40

15

5.0

3.0

2.0

0.3

0.2

0.1

40

36

12

30

20

1.0

0.5

0.05

0.03

24

16

20

8.0

4.0

28

0

32

10

20

7.0

5.0

2.0

0.2

0.3

0.5

0.7

1.0

3.0

0.9

1.0 1.1

0.1

0.07

0.05

0.03

0.02

0.6

0.5

0.4

0.3

0.2

0.7

0.1

0.8

**NOTE 3. -- THERMAL CIRCUIT MODEL**

(For heat conduction through the leads)

T

A(A)

T

A(K)

R

qS(A)

R

qL(A)

R

qJ(A)

R

qJ(K)

R

qL(K)

R

qS(K)

P

D

T

L(A)

T

C(A)

T

J

T

C(K)

T

L(K)

v

F

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

i F

, INST

ANT

ANEOUS FOR

W

ARD CURRENT

(AMP)

**Figure 7. Typical Forward Voltage**

I FSM

, PEAK SURGE CURRENT

(AMP)

NUMBER OF CYCLES

**Figure 8. Maximum Non-Repetitive Surge Current**

I R

, REVERSE CURRENT

(mA)

V

R

, REVERSE VOLTAGE (VOLTS)

**Figure 9. Typical Reverse Current**

T

C

= 100C

25C

1 Cycle

T

L

= 70

C

f = 60 Hz

Surge Applied at

Rated Load Conditions

1N5817

1N5818

1N5819

T

J

= 125C

100C

25C

Use of the above model permits junction to lead thermal re-

sistance for any mounting configuration to be found. For a

given total lead length, lowest values occur when one side of

the rectifier is brought as close as possible to the heatsink.

Terms in the model signify:

T

A

= Ambient Temperature

T

C

= Case Temperature

T

L

= Lead Temperature

T

J

= Junction Temperature

R

q

S

= Thermal Resistance, Heatsink to Ambient

R

q

L

= Thermal Resistance, Lead to Heatsink

R

q

J

= Thermal Resistance, Junction to Case

P

D

= Power Dissipation

(Subscripts A and K refer to anode and cathode sides, re-

spectively.) Values for thermal resistance components are:

R

q

L

= 100

C/W/in typically and 120

C/W/in maximum

R

q

J

= 36

C/W typically and 46

C/W maximum.

75C