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Электронный компонент: 1SMC26AT3

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Semiconductor Components Industries, LLC, 2001
May, 2001 Rev. 3
1
Publication Order Number:
1SMC5.0AT3/D
1SMC5.0AT3 Series
1500 Watt Peak Power Zener
Transient Voltage Suppressors
Unidirectional*
The SMC series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMC series is supplied in
ON Semiconductor's exclusive, cost-effective, highly reliable
Surmetic
TM
package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:
Working Peak Reverse Voltage Range 5.0 V to 78 V
Standard Zener Breakdown Voltage Range 6.7 V to 91.25 V
Peak Power 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
A Above 10 V
UL 497B for Isolated Loop Circuit Protection
Maximum Temperature Coefficient Specified
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
C for 10 Seconds
LEADS:
Modified LBend providing more contact area to bond pads
POLARITY:
Cathode indicated by molded polarity notch
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Please See the Table on the Following Page
PLASTIC SURFACE MOUNT
ZENER TRANSIENT
VOLTAGE SUPPRESSORS
5.078 VOLTS
1500 WATT PEAK POWER
Device
{
Package
Shipping
ORDERING INFORMATION
1SMCxxxAT3
SMC
2500/Tape & Reel
SMC
CASE 403
PLASTIC
http://onsemi.com
Cathode
Anode
Y
= Year
WW
= Work Week
Gxx
= Specific Device Code
=
(See Table on Page 3)
YWW
Gxx
MARKING DIAGRAM
*Bidirectional devices will not be available in this
series.
The "T3" suffix refers to a 13 inch reel.
Devices listed in
bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1SMC5.0AT3 Series
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2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.) @ T
L
= 25
C, Pulse Width = 1 ms
P
PK
1500
W
DC Power Dissipation @ T
L
= 75
C
Measured Zero Lead Length (Note 2.)
Derate Above 75
C
Thermal Resistance from Junction to Lead
P
D
R
q
JL
4.0
54.6
18.3
W
mW/
C
C/W
DC Power Dissipation (Note 3.) @ T
A
= 25
C
Derate Above 25
C
Thermal Resistance from Junction to Ambient
P
D
R
q
JA
0.75
6.1
165
W
mW/
C
C/W
Forward Surge Current (Note 4.) @ T
A
= 25
C
I
FSM
200
A
Operating and Storage Temperature Range
T
J
, T
stg
65 to +150
C
1. 10 X 1000
m
s, nonrepetitive
2. 1
square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless
otherwise noted, V
F
= 3.5 V Max @ I
F
= 100 A) (Note 5.)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms
nonrepetitive duty cycle
1SMC5.0AT3 Series
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 8.)
Device
V
RWM
(Note 6.)
I
R
@ V
RWM
V
BR
Volts (Note 7.)
@ I
T
V
C
I
PP
Device
Device
Marking
Volts
A
Min
Nom
Max
mA
Volts
Amps
1SMC5.0AT3
1SMC6.0AT3
1SMC6.5AT3
1SMC7.0AT3
GDE
GDG
GDK
GDM
5.0
6.0
6.5
7.0
1000
1000
500
200
6.4
6.67
7.22
7.78
6.7
7.02
7.6
8.19
7.0
7.37
7.98
8.6
10
10
10
10
9.2
10.3
11.2
12
163
145.6
133.9
125
1SMC7.5AT3
1SMC8.0AT3
1SMC8.5AT3
1SMC9.0AT3
GDP
GDR
GDT
GDV
7.5
8.0
8.5
9.0
100
50
25
10
8.33
8.89
9.44
10
8.77
9.36
9.92
10.55
9.21
9.83
10.4
11.1
1
1
1
1
12.9
13.6
14.4
15.4
116.3
110.3
104.2
97.4
1SMC10AT3
1SMC11AT3
1SMC12AT3
1SMC13AT3
GDX
GDZ
GEE
GEG
10
11
12
13
5
5
5
5
11.1
12.2
13.3
14.4
11.7
12.85
14
15.15
12.3
13.5
14.7
15.9
1
1
1
1
17
18.2
19.9
21.5
88.2
82.4
75.3
69.7
1SMC14AT3
1SMC15AT3
1SMC16AT3
1SMC17AT3
GEK
GEM
GEP
GER
14
15
16
17
5
5
5
5
15.6
16.7
17.8
18.9
16.4
17.6
18.75
19.9
17.2
18.5
19.7
20.9
1
1
1
1
23.2
24.4
26
27.6
64.7
61.5
57.7
53.3
1SMC18AT3
1SMC20AT3
1SMC22AT3
1SMC24AT3
GET
GEV
GEX
GEZ
18
20
22
24
5
5
5
5
20
22.2
24.4
26.7
21.05
23.35
25.65
28.1
22.1
24.5
26.9
29.5
1
1
1
1
29.2
32.4
35.5
38.9
51.4
46.3
42.2
38.6
1SMC26AT3
1SMC28AT3
1SMC30AT3
1SMC33AT3
GFE
GFG
GFK
GFM
26
28
30
33
5
5
5
5
28.9
31.1
33.3
36.7
30.4
32.75
35.05
38.65
31.9
34.4
36.8
40.6
1
1
1
1
42.1
45.4
48.4
53.3
35.6
33
31
28.1
1SMC36AT3
1SMC40AT3
1SMC43AT3
1SMC45AT3
GFP
GFR
GFT
GFV
36
40
43
45
5
5
5
5
40
44.4
47.8
50
42.1
46.75
50.3
52.65
44.2
49.1
52.8
55.3
1
1
1
1
58.1
64.5
69.4
72.2
25.8
32.2
21.6
20.6
1SMC48AT3
1SMC51AT3
1SMC54AT3
1SMC58AT3
GFX
GFZ
GGE
GGG
48
51
54
58
5
5
5
5
53.3
56.7
60
64.4
56.1
59.7
63.15
67.8
58.9
62.7
66.3
71.2
1
1
1
1
77.4
82.4
87.1
93.6
19.4
18.2
17.2
16
1SMC60AT3
1SMC64AT3
1SMC70AT3
1SMC75AT3
1SMC78AT3
GGK
GGM
GGP
GGR
GGT
60
64
70
75
78
5
5
5
5
5
66.7
71.1
77.8
83.3
86.7
70.2
74.85
81.9
87.7
91.25
73.7
78.6
86
92.1
95.8
1
1
1
1
1
96.8
103
113
121
126
15.5
14.6
13.3
12.4
11.4
6. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
C.
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 1500 Watt at the beginning of this group.
1SMC5.0AT3 Series
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4
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
t
P
, PULSE WIDTH
1
10
100
0.1
s 1
s
10
s
100
s
1 ms
10 ms
Figure 1. Pulse Rating Curve
0
1
2
3
4
0
50
100
t, TIME (ms)
V
ALUE (%)
HALF VALUE - I
PP
2
PEAK VALUE - I
PP
Figure 2. Pulse Waveform
Figure 3. Pulse Derating Curve
PEAK PULSE DERA
TING IN % OF
PEAK POWER OR CURRENT
@
T A
= 25
C
100
80
60
40
20
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
C)
120
140
160
t
P
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF I
PP
.
V
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR
(NOM) (VOLTS)
0.3
0.5 0.7 1
2
3
5
7 10
20 30
1000
500
200
100
50
1
2
5
10
20
T
L
= 25
C
t
P
= 10
s
V
BR
(NOM) = 6.8 TO 13 V
20 V
24 V
43 V
75 V
120 V
180 V
Figure 4. Dynamic Impedance
P
pk
, PEAK POWER (kW)
t
r
10
s
I
T
, TEST CURRENT (AMPS)
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-Withstand
test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
1SMC5.0AT3 Series
http://onsemi.com
5
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMC series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25
C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
s pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.