1
Motorola Bipolar Power Transistor Device Data
High Power NPN Silicon Power
Transistors
. . . designed for linear amplifiers, series pass regulators, and inductive switching
applications.
Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc -- 2N3771
IS/b
= 2.5 Adc @ VCE = 60 Vdc -- 2N3772
*MAXIMUM RATINGS
Rating
Symbol
2N3771
2N3772
Unit
CollectorEmitter Voltage
VCEO
40
60
Vdc
CollectorEmitter Voltage
VCEX
50
80
Vdc
CollectorBase Voltage
VCB
50
100
Vdc
EmitterBase Voltage
VEB
5.0
7.0
Vdc
Collector Current -- Continuous
Peak
IC
30
30
20
30
Adc
Base Current -- Continuous
Peak
IB
7.5
15
5.0
15
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
150
0.855
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N3771, 2N3772
Unit
Thermal Resistance, Junction to Case
JC
1.17
_
C/W
* Indicates JEDEC Registered Data.
200
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
150
100
50
25
P
D
, POWER DISSIP
A
TION (W
A
TTS)
175
125
75
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3771/D
Motorola, Inc. 1995
2N3771
2N3772
*Motorola Preferred Device
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS
150 WATTS
*
CASE 107
TO204AA
(TO3)
REV 7
2N3771 2N3772
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
*CollectorEmitter Sustaining Voltage (1)
2N3771
(IC = 0.2 Adc, IB = 0)
2N3772
VCEO(sus)
40
60
--
--
Vdc
CollectorEmitter Sustaining Voltage
2N3771
(IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms)
2N3772
VCEX(sus)
50
80
--
--
Vdc
CollectorEmitter Sustaining Voltage
2N3771
(IC = 0.2 Adc, RBE = 100 Ohms)
2N3772
VCER(sus)
45
70
--
--
Vdc
*Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N3771
(VCE = 50 Vdc, IB = 0)
2N3772
(VCE = 25 Vdc, IB = 0)
ICEO
--
--
10
10
mAdc
*Collector Cutoff Current
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc)
2N3771
(VCE = 100 Vdc, VEB(off) = 1.5 Vdc)
2N3772
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc)
2N6257
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
2N3771
2N3772
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
ICEV
--
--
--
--
--
2.0
5.0
4.0
10
10
mAdc
*Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
2N3771
(VCB = 100 Vdc, IE = 0)
2N3772
ICBO
--
--
2.0
5.0
mAdc
*Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
2N3771
(VBE = 7.0 Vdc, IC = 0)
2N3772
IEBO
--
--
5.0
5.0
mAdc
*ON CHARACTERISTICS
DC Current Gain (1)
(IC = 15 Adc, VCE = 4.0 Vdc)
2N3771
(IC = 10 Adc, VCE = 4.0 Vdc)
2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc)
2N3771
(IC = 20 Adc, VCE = 4.0 Vdc)
2N3772
hFE
15
15
5.0
5.0
60
60
--
--
--
CollectorEmitter Saturation Voltage
(IC = 15 Adc, IB = 1.5 Adc)
2N3771
(IC = 10 Adc, IB = 1.0 Adc)
2N3772
(IC = 30 Adc, IB = 6.0 Adc)
2N3771
(IC = 20 Adc, IB = 4.0 Adc)
2N3772
VCE(sat)
--
--
--
--
2.0
1.4
4.0
4.0
Vdc
BaseEmitter On Voltage
(IC = 15 Adc, VCE = 4.0 Vdc)
2N3771
(IC = 10 Adc, VCE = 4.0 Vdc)
2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
VBE(on)
--
--
2.7
2.2
Vdc
*DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz)
fT
0.2
--
MHz
SmallSignal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
40
--
--
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (nonrepetitive)
(VCE = 40 Vdc)
2N3771
(VCE = 60 Vdc)
2N3772
IS/b
3.75
2.5
--
--
Adc
* Indicates JEDEC Registered Data.
(1) Pulse Test: 300
s, Rep. Rate 60 cps.
2N3771 2N3772
3
Motorola Bipolar Power Transistor Device Data
Figure 2. Thermal Response -- 2N3771, 2N3772
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
2000
JC(t) = r(t)
JC
JC = 0.875
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.02
1000
40
1.0
Figure 3. ActiveRegion Safe Operating Area
-- 2N3771, 2N3772
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
30
20
10
2.0
2.0
3.0
5.0
10
30
50
70 100
7.0
I C
, COLLECT
OR CURRENT
(AMP)
dc
5.0
7.0
3.0
100
s
1.0 ms
20
2N3771
2N3772, (dc)
40
s
100 ms
500 ms
PULSE CURVES APPLY
FOR ALL DEVICES
2N3771
2N3772
200
s
BONDING WIRE LIMITED
THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
TC = 25
C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) < 200
_
C. TJ(pk) may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, TJ(pk) will be found to be less than TJ(max)
for pulse widths of 1 ms and less. When using Motorola
transistors, it is permissible to increase the pulse power limits
until limited by TJ(max).
Figure 4. Switching Time Test Circuit
+11 V
25
s
0
9.0 V
RB
4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf
10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
10
0.3
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
0.01
0.5 0.7 1.0
2.0
5.0 7.0
30
VCC = 30
IC/IB = 10
TJ = 25
C
0.05
t,
TIME (
s)
td
tr
3.0
0.02
10
20
VBE(off) = 5.0 V
2N3771 2N3772
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
100
0.3
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (AMP)
50
20
10
5.0
2.0
1.0
0.1
0.5
1.0
2.0
5.0 7.0
30
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
0.5
t,
TIME (
s)
tf
ts
3.0
0.2
10
20
2000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
200
0.2
1.0
2.0
5.0
100
Cib
10
20
C, CAP
ACIT
ANCE (pF)
1000
700
500
300
0.5
50
Cob
TJ = 25
C
500
0.3
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0
0.5 0.7
1.0
2.0
3.0
5.0
10
20
30
100
50
20
200
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
7.0
300
70
30
10
7.0
VCE = 4.0 V
Figure 9. Collector Saturation Region
2.0
0.01
IC, COLLECTOR CURRENT (AMP)
0
0.02
0.1
0.2
0.5
1.0
2.0
5.0
10
1.6
1.2
0.8
0.4
IC = 2.0 A
TJ = 25
C
0.05
5.0 A
10 A
20 A
2N3771 2N3772
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
1.050
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.830
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
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