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1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Power
Transistors
The 2N3773 and 2N6609 are PowerBase power transistors designed for high
power audio, disk head positioners and other linear applications. These devices can
also be used in power switching circuits such as relay or solenoid drivers, dc to dc
converters or inverters.
High Safe Operating Area (100% Tested) 150 W @ 100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8 A, 4 V
VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A
For Low Distortion Complementary Designs
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
140
Vdc
CollectorEmitter Voltage
VCEX
160
Vdc
CollectorBase Voltage
VCBO
160
Vdc
EmitterBase Voltage
VEBO
7
Vdc
Collector Current -- Continuous
-- Peak (1)
IC
16
30
Adc
Base Current -- Continuous
-- Peak (1)
IB
4
15
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
150
0.855
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.17
_
C/W
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3773/D
Motorola, Inc. 1995
2N3773
2N6609
PNP
NPN
*Motorola Preferred Device
16 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
140 VOLTS
150 WATTS
*
CASE 107
TO204AA
(TO3)
REV 7
2N3773 2N6609
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (1)
*CollectorEmitter Breakdown Voltage
(IC = 0.2 Adc, IB = 0)
VCEO(sus)
140
--
Vdc
*CollectorEmitter Sustaining Voltage
(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)
VCEX(sus)
160
--
Vdc
CollectorEmitter Sustaining Voltage
(IC = 0.2 Adc, RBE = 100 Ohms)
VCER(sus)
150
--
Vdc
*Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
ICEO
--
10
mAdc
*Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150
_
C)
ICEX
--
--
2
10
mAdc
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
ICBO
--
2
mAdc
*Emitter Cutoff Current
(VBE = 7 Vdc, IC = 0)
IEBO
--
5
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
*(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
15
5
60
--
--
CollectorEmitter Saturation Voltage
*(IC = 8 Adc, IB = 800 mAdc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
--
--
1.4
4
Vdc
*BaseEmitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
--
2.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of CommonEmitter
SmallSignal, ShortCircuit, Forward Current Transfer Ratio
(IC = 1 A, f = 50 kHz)
|hfe|
4
--
--
*SmallSignal Current Gain
(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe
40
--
--
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (nonrepetitive), VCE = 100 V, See Figure 12
IS/b
1.5
--
Adc
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2%.
* Indicates JEDEC Registered Data.
2N3773 2N6609
3
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
300
0.2
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
5.0
0.3
0.5 0.7 1.0
2.0
3.0
5.0
20
50
30
20
100
70
h
FE
, DC CURRENT
GAIN
150
C
25
C
55
C
VCE = 4 V
NPN
PNP
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
7.0
10
200
7.0
10
Figure 2. DC Current Gain
150
C
25
C
55
C
Figure 3. Collector Saturation Region
2.0
0.05
IB, BASE CURRENT (AMPS)
0
0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
1.6
1.2
0.8
0.4
TC = 25
C
IC = 4 A
IC = 16 A
Figure 4. Collector Saturation Region
2.0
IB, BASE CURRENT (AMPS)
0
1.6
1.2
0.8
0.4
TC = 25
C
2.0
0.2
IC, COLLECTOR CURRENT (AMPS)
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
20
1.2
0.4
0
IC/IB = 10
VBE(sat)
V
, VOL
T
AGE (VOL
TS)
Figure 5. "On" Voltage
1.6
0.8
10
150
C
25
C
VCE(sat)
25
C
2.0
IC, COLLECTOR CURRENT (AMPS)
1.2
0.4
IC/IB = 10
VBE(sat)
V
, VOL
T
AGE (VOL
TS)
Figure 6. "On" Voltage
1.6
0.8
150
C
25
C
VCE(sat)
150
C
25
C
VCE = 4 V
IC = 4 A
IC = 8 A
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0
20
7.0
10
300
5.0
50
30
20
100
70
7.0
10
200
IC = 8 A
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0 3.0
5.0
IC = 16 A
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
20
10
150
C
2N3773 2N6609
4
Motorola Bipolar Power Transistor Device Data
30
3.0
Figure 7. Forward Bias Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
20
10
5.0
3.0
2.0
1.0
0.5
0.03
5.0 7.0
10
20
30
50
300
BONDING WIRE LIMIT
THERMAL LIMIT
@ TC = 25
C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
70
0.3
0.2
I C
, COLLECT
OR CURRENT
(AMP)
dc
10
s
100
s
100 ms
0.1
0.05
100
200
40
s
200
s
1.0 ms
500 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 200
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 200
_
C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100
80
60
40
0
20
0
40
80
120
160
200
Figure 8. Power Derating
TC, CASE TEMPERATURE (
C)
POWER DERA
TING F
ACT
OR (%)
THERMAL
DERATING
2N3773 2N6609
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
1.050
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.830
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
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