Medium-Power Plastic PNP
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These highperformance plastic devices feature:
Low Saturation Voltage --
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction --
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to NPN 2N4921, 2N4922, 2N4923
*MAXIMUM RATINGS
Ratings
Symbol
2N4918
2N4919
2N4920
Unit
CollectorEmitter Voltage
VCEO
40
60
80
Vdc
CollectorBase Voltage
VCB
40
60
80
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous (1)
IC*
1.0
3.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25
C
Derate above 25
_
C
PD
30
0.24
Watts
W/
_
C
Operating & Storage Junction
Temperature Range
TJ, Tstg
65 to +150
_
C
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
4.16
_
C/W
*Indicates JEDEC Registered Data for 2N4918 Series.
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual currenthandling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 10
1
Publication Order Number:
2N4918/D
2N4918
thru
2N4920
*ON Semiconductor Preferred Device
3 AMPERE
GENERALPURPOSE
POWER TRANSISTORS
4080 VOLTS
30 WATTS
*
CASE 7709
TO225AA TYPE
3
2 1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
2N4918 thru 2N4920
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2
40
30
20
10
0
25
50
75
100
125
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
2N4918 thru 2N4920
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3
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0)
2N4918
2N4919
2N4920
VCEO(sus)
40
60
80
--
--
--
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N4918
(VCE = 30 Vdc, IB = 0)
2N4919
(VCE = 40 Vdc, IB = 0)
2N4920
ICEO
--
--
--
0.5
0.5
0.5
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125
_
C
ICEX
--
--
0.1
0.5
mAdc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
--
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
40
30
10
--
150
--
--
CollectorEmitter Saturation Voltage (1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
--
0.6
Vdc
BaseEmitter Saturation Voltage (1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
--
1.3
Vdc
BaseEmitter On Voltage (1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
--
1.3
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
3.0
--
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
--
100
pF
SmallSignal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
--
--
*Indicates JEDEC Registered Data.
(1) Pulse Test: PW
[
300
s, Duty Cycle
[
2.0%
Figure 2. Switching Time Equivalent Test Circuit
5.0
10
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (mA)
VCC = 30 V
IC/IB = 20
t, TIME
(s)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.05
20 30
50 70 100
200
700 1000
Vin
t1
VBE(off)
APPROX 9.0 V
TURN-OFF PULSE
t3
t2
APPROX
-11 V
VCC
SCOPE
RB
Cjd << Ceb
+4.0 V
t1 < 15 ns
100 < t2 < 500
s
t3 < 15 ns
DUTY CYCLE
2.0%
Vin
RC
0.07
3.0
TJ = 25
C
TJ = 150
C
IC/IB = 10, UNLESS NOTED
VCC = 60 V
VCC = 30 V
VCC = 30 V
VBE(off) = 0
300
500
0
0
Vin
APPROX
-11 V
RB and RC
varied to
obtain desired
current levels
tr
VBE(off) = 2.0 V
VCC = 60 V
td
2N4918 thru 2N4920
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4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t)
, TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
1000
500
JC(t) = r(t)
JC
JC = 4.16
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
10
1.0
Figure 5. ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1
2.0 3.0
5.0
10
20
30
50
100
70
0.2
I C
, COLLECT
OR CURRENT
(AMP)
TJ = 150
C
dc
5.0 ms
100
s
7.0
PULSE CURVES APPLY BELOW
RATED VCEO
1.0 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ TC = 25
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
t
s
, ST
ORAGE
TIME (s)
t
f, F
ALL
TIME (s)
5.0
10
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05
20 30
50 70
500 700 1000
ts
= ts - 1/8 tf
0.07
100
3.0
0.7
200 300
TJ = 25
C
TJ = 150
C
IC/IB = 20
5.0
10
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05
20 30
50 70
500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25
C
TJ = 150
C
IC/IB = 10
IC/IB = 20
IC/IB = 10
IB1 = IB2
VCC = 30 V
IB1 = IB2
2N4918 thru 2N4920
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5
TYPICAL DC CHARACTERISTICS
R BE
, EXTERNAL
BASE-EMITTER RESIST
ANCE (OHMS)
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
-0.2
1000
2.0
Figure 8. Current Gain
IC, COLLECTOR CURRENT (mA)
10
3.0 5.0
10
20 30
200 300 500
2000
500
200
100
70
Figure 9. Collector Saturation Region
1.0
0.2
IB, BASE CURRENT (mA)
0
0.3 0.5
1.0
2.0
5.0
10
20
50
200
0.8
0.6
0.4
0.2
IC = 0.1 A
TJ = 25
C
0.25 A
0.5 A
1.0 A
700
300
h FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
-55
C
VCE = 1.0 V
50
30
20
50
100
1000
3.0
30
100
108
0
Figure 10. Effects of BaseEmitter Resistance
TJ, JUNCTION TEMPERATURE (
C)
30
60
90
120
150
107
105
104
103
VCE = 30 V
IC = 10 ICES
IC = 2x ICES
IC
ICES
ICES VALUES
OBTAINED FROM
FIGURE 13
106
1.5
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
20 30 50
100 200 300
2000
1.2
0.9
0.6
0.3
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOL
T
AGE (VOL
TS)
Figure 11. "On" Voltage
3.0
500 1000
VBE @ VCE = 2.0 V
102
Figure 12. Collector CutOff Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
101
100
10-1
, COLLECT
OR CURRENT
(A)
I C
10-2
103
-0.1
0
+0.1
+0.2
+0.3
+0.4
+0.5
VCE = 30 V
TJ = 150
C
100
C
25
C
FORWARD
IC = ICES
104
+2.5
2.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
3.0 5.0
10
20 30 50
100 200
2000
TJ = -55
C to +100
C
TEMPERA
TURE COEFFICIENTS (mV/
C)
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
VB FOR VBE
*
VC FOR VCE(sat)
TJ = 100
C to 150
C
*APPLIES FOR IC/IB <
hFE @ VCE + 1.0 V
2
+1.0
300 500 1000
REVERSE
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