Medium-Power Plastic NPN
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These highperformance plastic devices feature:
Low Saturation Voltage --
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction --
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
Rating
Symbol
2N4921
2N4922
2N4923
Unit
CollectorEmitter Voltage
VCEO
40
60
80
Vdc
CollectorBase Voltage
VCB
40
60
80
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous (1)
IC
1.0
3.0
Adc
Base Current -- Continuous
IB
1.0
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
30
0.24
Watts
W/
_
C
Operating & Storage Junction
Temperature Range
TJ, Tstg
65 to +150
_
C
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
4.16
_
C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 10
1
Publication Order Number:
2N4921/D
2N4921
thru
2N4923
*ON Semiconductor Preferred Device
1 AMPERE
GENERALPURPOSE
POWER TRANSISTORS
4080 VOLTS
30 WATTS
*
CASE 7709
TO225AA TYPE
3
2 1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
2N4921 thru 2N4923
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2
40
30
20
10
0
25
50
75
100
125
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
2N4921 thru 2N4923
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3
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (3)
(IC = 0.1 Adc, IB = 0)
2N4921
2N4922
2N4923
VCEO(sus)
40
60
80
--
--
--
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N4921
(VCE = 30 Vdc, IB = 0)
2N4922
(VCE = 40 Vdc, IB = 0)
2N4923
ICEO
--
--
--
0.5
0.5
0.5
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125
_
C
ICEX
--
--
0.1
0.5
mAdc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
--
0.1
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (3)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
40
30
10
--
150
--
--
CollectorEmitter Saturation Voltage (3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
--
0.6
Vdc
BaseEmitter Saturation Voltage (3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
--
1.3
Vdc
BaseEmitter On Voltage (3)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
--
1.3
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
3.0
--
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
--
100
pF
SmallSignal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
--
--
(3) Pulse Test: PW
300
s, Duty Cycle
2.0%.
*Indicates JEDEC Registered Data.
Figure 2. Switching Time Equivalent Circuit
5.0
10
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (mA)
VCC = 30 V
IC/IB = 20
t, TIME
(s)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.05
20 30
50 70 100
200
700 1000
VCC
SCOPE
RB
Cjd << Ceb
-4.0 V
t1
15 ns
100 < t2
500
s
t3
15 ns
DUTY CYCLE
2.0%
Vin
RC
0.07
3.0
IC/IB = 10, UNLESS NOTED
VCC = 30 V
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
300
500
tr
td
t1
VBE(off)
APPROX 9.0 V
TURN-ON PULSE
t3
t2
Vin
APPROX
+11 V
Vin
TURN-OFF PULSE
APPROX
+11 V
RB and RC varied to
obtain desired
current levels
TJ = 25
C
TJ = 150
C
VCC = 60 V
2N4921 thru 2N4923
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4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t)
, TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
1000
500
JC(t) = r(t)
JC
JC = 4.16
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
0.1
SINGLE PULSE
10
1.0
Figure 5. ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1
2.0 3.0
5.0
10
20
30
50
100
70
0.2
I C
, COLLECT
OR CURRENT
(AMP)
TJ = 150
C
dc
5.0 ms
7.0
PULSE CURVES APPLY BELOW
RATED VCEO
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
C
7.0
3.0
0.7
0.3
1.0 ms
100
s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
t
s
, ST
ORAGE
TIME (s)
5.0
10
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05
20 30
50 70
500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25
C
TJ = 150
C
IC/IB = 10
IC/IB = 20
5.0
10
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05
20 30
50 70
500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25
C
TJ = 150
C
IC/IB = 20
IC/IB = 10
IC/IB = 20
t
f, F
ALL
TIME (s)
IB1 = IB2
ts
= ts - 1/8 tf
VCC = 30 V
IB1 = IB2
2N4921 thru 2N4923
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5
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
R BE
, EXTERNAL
BASE-EMITTER RESIST
ANCE (OHMS)
1000
2.0
Figure 8. Current Gain
IC, COLLECTOR CURRENT (mA)
10
3.0 5.0
10
20 30
200 300 500
2000
500
200
100
70
Figure 9. Collector Saturation Region
1.0
0.2
IB, BASE CURRENT (mA)
0
0.3 0.5
1.0
2.0
5.0
10
20
50
200
0.8
0.6
0.4
0.2
IC = 0.1 A
TJ = 25
C
0.25 A
0.5 A
1.0 A
700
300
h FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
-55
C
VCE = 1.0 V
50
30
20
50
100
1000
3.0
30
100
108
0
Figure 10. Effects of BaseEmitter Resistance
TJ, JUNCTION TEMPERATURE (
C)
30
60
90
120
150
107
105
104
103
VCE = 30 V
IC = 10 x ICES
IC = 2 x ICES
IC
ICES
ICES VALUES
OBTAINED FROM
FIGURE 12
106
1.5
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
20 30 50
100 200 300
2000
1.2
0.9
0.6
0.3
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOL
T
AGE (VOL
TS)
Figure 11. "On" Voltage
3.0
500 1000
VBE @ VCE = 2.0 V
104
-0.2
Figure 12. Collector CutOff Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
103
102
10-1
, COLLECT
OR CURRENT
(A)
I C
-0.1
0
+0.1
+0.2
+0.3
+0.4
+0.5
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
IC = ICES
+2.5
2.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
3.0 5.0
10
20 30 50
100 200
2000
-55
C to +100
C
TEMPERA
TURE COEFFICIENTS (mV/
C)
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
VB FOR VBE
TJ = 100
C to 150
C
*APPLIES FOR IC/IB
hFE @ VCE + 1.0 V
2
+1.0
300 500 1000
101
100
10-2
*
VC FOR VCE(sat)
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