Silicon PNP Power Transistors
. . . for use in power amplifier and switching circuits, -- excellent
safe area limits. Complement to NPN 2N5191, 2N5192
*MAXIMUM RATINGS
Rating
Symbol
2N5194
2N5195
Unit
CollectorEmitter Voltage
VCEO
60
80
Vdc
CollectorBase Voltage
VCB
60
80
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
40
320
Watts
mW/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +150
_
C/W
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
3.12
_
C/W
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0)
2N5194
2N5195
VCEO(sus)
60
80
--
--
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N5194
(VCE = 80 Vdc, IB = 0)
2N5195
ICEO
--
--
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N5194
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N5195
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125
_
C)
2N5194
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125
_
C)
2N5195
ICEX
--
--
--
--
0.1
0.1
2.0
2.0
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N5194
(VCB = 80 Vdc, IE = 0)
2N5195
ICBO
--
--
0.1
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 10
1
Publication Order Number:
2N5194/D
2N5194
2N5195
*ON Semiconductor Preferred Device
4 AMPERE
POWER TRANSISTORS
SILICON PNP
6080 VOLTS
*
CASE 7709
TO225AA TYPE
3
2 1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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2
*ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain (2)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5194
2N5195
(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5194
2N5195
hFE
25
20
10
7.0
100
80
--
--
--
CollectorEmitter Saturation Voltage (2)
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
--
--
0.6
1.4
Vdc
BaseEmitter On Voltage (2)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
--
1.2
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
--
MHz
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
10
0.1
0.004
7.0
5.0
1.0
0.7
0.5
0.3
0.007 0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
4.0
VCE = 2.0 V
VCE = 10 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
0
0.05
1.6
1.2
0.8
0.4
0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
10
500
IC = 10 mA
2.0
3.0
TJ = 150
C
-55
C
25
C
3.0
2.0
0.2
h FE
, DC CURRENT
GAIN (NORMALIZED)
5.0 7.0
20
30
50 70 100
200 300
100 mA
1.0 A
3.0 A
TJ = 25
C
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3
R BE
, EXTERNAL
BASE-EMITTER RESIST
ANCE (OHMS)
2.0
0.005
IC, COLLECTOR CURRENT (AMP)
0.01 0.02 0.03 0.05
0.2 0.3
1.0
2.0
4.0
1.6
1.2
0.8
0.4
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOL
T
AGE (VOL
TS)
Figure 3. "On" Voltage
0.1
0.5
3.0
VBE @ VCE = 2.0 V
+2.5
Figure 4. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
*APPLIES FOR IC/IB
hFE @ VCE
TJ = -65
C to +150
C
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
VB for VBE
*
VC for VCE(sat)
+1.0
0.005 0.01 0.020.03 0.05
0.2 0.3
1.0 2.0
4.0
0.1
0.5
3.0
103
+0.4
Figure 5. Collector CutOff Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
10-1
, COLLECT
OR CURRENT
(A)
I C
10-2
10-3
+0.3 +0.2 +0.1
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6
VCE = 30 Vdc
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
ICES
107
20
Figure 6. Effects of BaseEmitter Resistance
TJ, JUNCTION TEMPERATURE (
C)
40
60
80
100
120
140
160
106
105
104
103
102
VCE = 30 V
IC = 10 x ICES
IC = 2 x ICES
IC
ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
Figure 7. Switching Time Equivalent Test Circuit
APPROX
-11 V
TURN-ON PULSE
Vin
t1
VBE(off)
TURN-OFF PULSE
Vin
t3
t2
APPROX
-11 V
VCC
SCOPE
RB
Cjd << Ceb
+4.0 V
t1
7.0 ns
100 < t2 < 500
s
t3 < 15 ns
DUTY CYCLE
2.0%
Vin
RC
0
RB AND RC VARIED
TO OBTAIN DESIRED
CURRENT LEVELS
500
0.1
VR, REVERSE VOLTAGE (VOLTS)
0.2 0.3 0.5
1.0
3.0 5.0
20
40
300
200
100
70
50
TJ = 25
C
CAP
ACIT
ANCE (pF)
Figure 8. Capacitance
2.0
10
30
Ceb
Ccb
APPROX
+9.0 V
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4
2.0
0.05
Figure 9. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02
0.07 0.1
0.2 0.3
1.0
2.0
4.0
tr @ VCC = 30 V
IC/IB = 10
TJ = 25
C
0.03
t, TIME
(s)
0.5
0.05
0.07
0.7
3.0
tr @ VCC = 10 V
td @ VBE(off) = 2.0 V
2.0
0.05
Figure 10. TurnOff Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02
0.07 0.1
0.2
0.3
1.0
2.0
4.0
tf @ VCC = 30 V
IB1 = IB2
IC/IB = 10
ts
= ts - 1/8 tf
TJ = 25
C
0.03
t, TIME
(s)
0.5
0.05
0.07
0.7
3.0
tf @ VCC = 10 V
ts
10
1.0
Figure 11. Rating and Thermal Data
ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1
2.0
5.0
10
20
50
100
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25
C
BONDING WIRE LIMIT
0.2
I C
, COLLECT
OR CURRENT
(AMP)
CURVES APPLY BELOW RATED VCEO
TJ = 150
C
2N5194
dc
5.0 ms
1.0 ms
100
s
2N5195
Note 1:
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150_C. TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At highcase temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 12. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
1000
500
JC(max) = 3.12
C/W
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
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5
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
tP
PP
PP
t1
1/f
DUTY CYCLE, D = t1 f =
t1
tP
PEAK PULSE POWER = PP
Figure 13.
A train of periodical power pulses can be represented by
the model shown in Figure 13. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find
JC(t), multiply the value obtained from Figure 12
by the steady state value
JC.
Example:
The 2N5193 is dissipating 50 watts under the following
conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
The peak rise in junction temperature is therefore:
T = r(t) x PP x
JC = 0.27 x 50 x 3.12 = 42.2
_
C
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