1
Motorola Bipolar Power Transistor Device Data
High-Power NPN Silicon
Transistors
. . . for use in power amplifier and switching circuits applications.
High CollectorEmitter Sustaining Voltage --
VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)
Low CollectorEmitter Saturation Voltage --
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)
VCE(sat) =
1.0 Vdc (Max) @ IC = 10 Adc (2N5303)
Excellent Safe Operating Area --
200 Watt dc Power Rating to 30 Vdc (2N5303)
Complements to PNP 2N4398, 2N4399 and 2N5745
*MAXIMUM RATINGS
Rating
Symbol
2N5301
2N5302
2N5303
Unit
CollectorEmitter Voltage
VCEO
40
60
80
Vdc
CollectorBase Voltage
VCB
40
60
80
Vdc
Collector Current -- Continuous
IC
30
30
20
Adc
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
200
1.14
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
0.875
_
C/W
Thermal Resistance, Case to Ambient
CA
34
_
C/W
* Indicates JEDEC Registered Data.
TC
200
0
0
20
40
60
80
100
120
140
160
180
200
Figure 1. Power Temperature Derating Curve
TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
150
100
50
TC
8.0
0
6.0
4.0
2.0
TA
TA
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5301/D
Motorola, Inc. 1995
2N5301
2N5302
2N5303
20 AND 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 60 80 VOLTS
200 WATTS
CASE 107
TO204AA
(TO3)
2N5301 2N5302 2N5303
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
*OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
2N5301
2N5302
2N5303
VCEO(sus)
40
60
80
--
--
--
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N5301
(VCE = 60 Vdc, IB = 0)
2N5302
(VCE = 80 Vdc, IB = 0)
2N5303
ICEO
--
--
--
5.0
5.0
5.0
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N5301
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N5302
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N5303
ICEX
--
--
--
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
2N5301
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
2N5302
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
2N5303
ICEX
--
--
--
10
10
10
mAdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
2N5301
(VCB = 80 Vdc, IE = 0)
2N5302
(VCB = 80 Vdc, IE = 0)
2N5303
ICBO
--
--
--
1.0
1.0
1.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
--
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
*(IC = 1.0 Adc, VCE = 2.0 Vdc)
ALL TYPES
*(IC = 10 Adc, VCE = 2.0 Vdc)
2N5303
*(IC = 15 Adc, VCE = 2.0 Vdc)
2N5301, 2N5302
*
(IC = 20 Adc, VCE = 4.0 Vdc)
2N5303
*
(IC = 30 Adc, VCE = 4.0 Vdc)
2N5301, 2N5302
hFE
40
15
15
5.0
5.0
--
60
60
--
--
--
*CollectorEmitter Saturation Voltage (Note 1)
(IC = 10 Adc, IB = 1.0 Adc)
2N5301, 2N5302
(IC = 10 Adc, IB = 1.0 Adc)
2N5303
(IC = 15 Adc, IB = 1.5 Adc)
2N5303
(IC = 20 Adc, IB = 2.0 Adc)
2N5301, 2N5302
(IC = 20 Adc, IB = 4.0 Adc)
2N5303
(IC = 30 Adc, IB = 6.0 Adc)
2N5301, 2N5302
VCE(sat)
--
--
--
--
--
--
0.75
1.0
1.5
2.0
2.0
3.0
Vdc
*Base Emitter Saturation Voltage (Note 1)
(IC = 10 Adc, IB = 1.0 Adc)
ALL TYPES
(IC = 15 Adc, IB = 1.5 Adc)
2N5301, 2N5302
(IC = 15 Adc, IB = 1.5 Adc)
2N5303
(IC = 20 Adc, IB = 2.0 Adc)
2N5301, 2N5302
(IC = 20 Adc, IB = 4.0 Adc)
2N5303
VBE(sat)
--
--
--
--
--
1.7
1.8
2.0
2.5
2.5
Vdc
*BaseEmitter On Voltage (Note 1)
(IC = 10 Adc, VCE = 2.0 Vdc)
2N5303
(IC = 15 Adc, VCE = 2.0 Vdc)
2N5301, 2N5302
(IC = 20 Adc, VCE = 4.0 Vdc)
2N5303
(IC = 30 Adc, VCE = 4.0 Vdc)
2N5301, 2N5302
VBE(on)
--
--
--
--
1.5
1.7
25
3.0
Vdc
*DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
--
MHz
SmallSignal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
--
--
*SWITCHING CHARACTERISTICS
Rise Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
tr
--
1.0
s
Storage Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ts
--
2.0
s
Fall Time
CC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
tf
--
1.0
s
* Indicates JEDEC Registered Data.
Note 1: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
2N5301 2N5302 2N5303
3
Motorola Bipolar Power Transistor Device Data
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Figure 2. TurnOn time
INPUT PULSE
tr
20 ns
PW = 10 to 100
s
DUTY CYCLE = 2.0%
+11 V
2.0 V
10
VCC
+ 30 V
3.0
TO
SCOPE
tr
20 ns
Figure 3. TurnOff time
INPUT PULSE
tr
20 ns
PW = 10 to 100
s
DUTY CYCLE = 2.0%
+11 V
9.0 V
10
VCC
+ 30 V
3.0
TO
SCOPE
tr
20 ns
0
D
VBB = 7.0 V
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.03
r(t)
, NORMALIZED EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
0.05 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
2000
500
JC(t) = r(t)
JC
JC = 0.875
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
100
1.0
Figure 5. ActiveRegion Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
50
20
10
5.0
2.0
1.0
0.5
0.1
2.0
3.0
5.0
10
20
30
100
Secondary Breakdown Limited
Bonding Wire Limited
Thermal Limitations
Pulse Duty Cycle
10%
50
0.2
I C
, COLLECT
OR CURRENT
(AMP)
2N5303
TJ = 200
C
2N5301, 5302
100
s
1.0 ms
5.0 ms
Figure 6. Capacitance versus Voltage
3000
0.5
VR, REVERSE VOLTAGE (VOLTS)
100
5.0 7.0
20
30
50
10
1.0
2.0
3.0
C, CAP
ACIT
ANCE (pF)
500
300
200
TJ = 25
C
Cib
Cob
TC = 25
C
2N5301
2N5302
2N5303
2000
1000
1000
dc
2N5301 2N5302 2N5303
4
Motorola Bipolar Power Transistor Device Data
5.0
0.03
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
0.7
0.5
0.3
0.1
0.05
0.05
0.1
0.2
0.5
2.0 3.0
30
tr @ VCC = 30 V
td @ VOB = 2.0 V
TJ = 25
C
IC/IB = 10
0.07
t,
TIME (
s)
1.0
Figure 7. TurnOn Time
1.0
0.2
0.3
5.0
10
20
tr @ VCC = 10 V
3.0
0.03
IC, COLLECTOR CURRENT (AMP)
0.7
0.5
0.3
0.1
0.05
0.1
0.5
1.0
3.0
30
tf @ VCC = 30 V
TJ = 25
C
IB1 = IB2
IC/IB = 10
ts
ts 1/8 tf
t,
TIME (
s)
Figure 8. TurnOff Time
1.0
0.3
5.0
10
tf @ VCC = 10 V
ts
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
R
BE
, EXTERNAL
BASEEMITTER RESIST
ANCE (OHMS)
300
0.03
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
10
0.05
0.1
0.3
0.5
1.0
3.0
5.0
10
30
100
50
30
20
Figure 10. Collector Saturation Region
2.0
0.01
IB, BASE CURRENT (AMP)
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
1.6
1.2
0.8
0.4
IC = 2.0 A
TJ = 25
C
5.0 A
10 A
200
70
h
FE
, DC CURRENT
GAIN
TJ = 175
C
25
C
55
C
VCE = 10 V
VCE = 2.0 V
20 A
108
0
Figure 11. Effects of BaseEmitter Resistance
TJ, JUNCTION TEMPERATURE (
C)
20
40
60
80
100
120
140
160
200
106
105
104
103
102
180
VCE = 30 V
IC = 2 x ICES
IC
ICES
TYPICAL ICES VALUES OBTAINED
FROM FIGURE 13
107
IC = 10 x ICES
2.0
0.03
IC, COLLECTOR CURRENT (AMP)
0.05
0.1
0.3
0.5
1.0
3.0
5.0
10
30
1.6
0.8
0.6
0.4
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
, VOL
T
AGE (VOL
TS)
Figure 12. "On" Voltages
1.8
1.4
1.2
1.0
0.2
VBE(on) @ VCE = 2.0 V
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