Silicon NPN High-Power
Transistor
. . . designed for generalpurpose power amplifier and switching
applications.
CollectorEmitter Sustaining Voltage --
V
CEO(sus)
= 80 Vdc (Min)
DC Current Gain --
h
FE
= 20 (Min) @ I
C
= 6.0 Adc
Low Collector -- Emitter Saturation Voltage --
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 7.0 Adc
High Current -- GainBandwidth Product --
f
T
= 4.0 MHz (Min) @ I
C
= 1.0 Adc
MAXIMUM RATINGS (1)
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
V
CEO
80
Vdc
CollectorBase Voltage
V
CB
80
Vdc
EmitterBase Voltage
V
EB
5.0
Vdc
Collector Current -- Continuous
Peak
I
C
15
30
Adc
Base Current
I
B
5.0
Adc
Total Device Dissipation @ T
C
= 25
_
C
Derate above 25
_
C
P
D
160
0.915
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
1.1
_
C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
reregistration reflecting these changes has been requested. All above values meet or
exceed present JEDEC registered data.
P D
, POWER DISSIP
A
TION (W
A
TTS)
160
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (
C)
120
80
40
20
140
100
60
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev. 2
1
Publication Order Number:
2N5882/D
2N5882
ON Semiconductor Preferred Device
15 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
160 WATTS
CASE 107
TO204AA
(TO3)
2N5882
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (2)
(I
C
= 200 mAdc, I
B
= 0)
V
CEO(sus)
80
--
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
I
CEO
--
1.0
mAdc
Collector Cutoff Current
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150
_
C)
I
CEX
--
--
0.5
5.0
mAdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
--
0.5
mAdc
Emitter Cutoff Current (V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
--
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(I
C
= 2.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 6.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 15 Adc, V
CE
= 4.0 Vdc)
h
FE
35
20
4.0
--
100
--
--
CollectorEmitter Saturation Voltage (2)
(I
C
= 7.0 Adc, I
B
= 0.7 Adc)
(I
C
= 15 Adc, I
B
= 3.75 Adc)
V
CE(sat)
--
--
1.0
4.0
Vdc
BaseEmitter Saturation Voltage (1)
(I
C
= 15 Adc, I
B
= 3.75 Adc)
V
BE(sat)
--
2.5
Vdc
BaseEmitter On Voltage (2)
(I
C
= 6.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
--
1.5
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (3)
(I
C
= 1.0 Adc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
f
T
4.0
--
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 100 kHz)
C
ob
--
400
pF
SmallSignal Current Gain (I
C
= 2.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 kHz)
h
fe
20
--
--
SWITCHING CHARACTERISTICS
Rise Time
(V
30 Vdc I
6 0 Adc
t
r
--
0.7
s
Storage Time
(V
CC
= 30 Vdc, I
C
= 6.0 Adc,
I
B1
= I
B2
= 0 6 Adc See Figure 2)
t
s
--
1.0
s
Fall Time
I
B1
= I
B2
= 0.6 Adc See Figure 2)
t
f
--
0.8
s
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%
(3) f
T
= |h
fe
|
f
test
.
Figure 2. Switching Times Test Circuit
25
s
0
-8.0 V
R
B
+7.0 V
D
1
SCOPE
V
CC
-30 V
R
C
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
51
D
1
MUST BE FAST RECOVERY TYPE, e.g.
1N5825 USED ABOVE I
B
100 mA
MSD6100 USED BELOW I
B
100 mA
FOR CURVES OF FIGURES 3 and 6,
R
B
and R
C
ARE VARIED TO OBTAIN
DESIRED CURRENT LEVELS
For PNP test circuit,
reverse all polarities.
5.0
15
+10 V
Figure 3. TurnOn Time
2.0
0.2
I
C
, COLLECTOR CURRENT (AMP)
0.7
0.2
0.1
0.02
0.3
0.5 0.7 1.0
3.0
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25
C
0.07
t, TIME
(s)
t
r
2.0
0.5
1.0
10
0.05
0.03
5.0 7.0
t
d
@ V
BE(off)
5.0 V
0.3
2N5882
http://onsemi.com
3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r
(
t
)
, EFFE
C
TIVE TRAN
S
IENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
JC
(t) = r(t)
JC
JC
= 1.1
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
SINGLE PULSE
0.1
0.02 0.03
0.3
3.0
30
300
0.01
100
1.0
Figure 5. ActiveRegion Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50
30
20
10
0.1
2.0 3.0
7.0 10
100
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25
C
(SINGLE PULSE)
70
5.0
I C
, COLLECT
OR CURRENT
(AMP)
T
J
= 200
C
CURVES APPLY BELOW RATED V
CEO
dc
3.0
0.5
0.3
5.0
0.2
0.1 ms
2.0
1.0
20 30
50
0.5 ms
1.0 ms
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200
_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 200
_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10
0.2
Figure 6. TurnOff Time
I
C
, COLLECTOR CURRENT (AMP)
5.0
3.0
0.7
0.3
0.1
0.3
0.5 0.7 1.0
3.0
7.0
20
T
J
= 25
C
V
CC
= 30 V
I
C
/I
B
= 0
I
B1
= I
B2
0.2
t, TIME
(s)
t
s
2.0
2000
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
60
2.0
5.0
10
20
100
0.2
0.5
1.0
C, CAP
ACIT
ANCE (pF)
1000
500
100
T
J
= 25
C
C
ib
2.0
7.0
10
700
5.0
t
f
C
ob
1.0
0.5
300
200
50
2N5882
http://onsemi.com
4
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
I
B
, BASE CURRENT (mAdc)
0
0.8
0.4
T
J
= 25
C
1.2
1.6
Figure 10. "On" Voltage
2.0
I
C
, COLLECTOR CURRENT (AMP)
1.6
1.2
0.8
0.4
0
T
J
= 25
C
V
,
VOL
T
AGE (VOL
TS)
1000
0.2
I
C
, COLLECTOR CURRENT (AMP)
10
0.3
0.5 0.7
2.0
3.0
5.0 7.0
20
70
30
20
100
50
h FE
, DC CURRENT
GAIN
T
J
= +150
C
25
C
-55
C
200
500
V
CE
= 4.0 V
1.0
10
700
300
0.03 0.05
0.1
0.2
0.5
3.0
0.07
0.3
0.7 1.0
2.0
I
C
= 3.0 A
6.0 A
12 A
0.2 0.3
0.5 0.7 1.0
2.0
5.0 7.0
20
10
3.0
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
2N5882
http://onsemi.com
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
---
1.050
---
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
---
0.830
---
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
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