Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for generalpurpose amplifier and lowspeed
switching applications.
High DC Current Gain --
hFE = 2000 (Typ) @ IC = 2.0 Adc
CollectorEmitter Sustaining Voltage -- @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) -- 2N6035, 2N6038 = 80 Vdc
(Min) -- 2N6036, 2N6039
Forward Biased Second Breakdown Current Capability
IS/b = 1.5 Adc @ 25 Vdc
Monolithic Construction with BuiltIn BaseEmitter Resistors to
Limit
E
Leakage Multiplication
SpaceSaving High PerformancetoCost Ratio TO225AA Plastic
Package
MAXIMUM RATINGS (1)
Rating
Symbol
2N6035
2N6038
2N6036
2N6039
Unit
CollectorEmitter Voltage
VCEO
60
80
Vdc
CollectorBase Voltage
VCB
60
80
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
4.0
8.0
Adc
Base Current
IB
100
mAdc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
40
0.32
Watts
W/
_
C
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
PD
1.5
0.012
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
3.12
_
C/W
Thermal Resistance, Junction to Ambient
JA
83.3
_
C/W
(1) Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 10
1
Publication Order Number:
2N6035/D
2N6035
2N6036
2N6038
2N6039
*ON Semiconductor Preferred Device
DARLINGTON
4AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
40 WATTS
*
*
CASE 7709
TO225AA TYPE
PNP
NPN
3
2 1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
2N6035 2N6036 2N6038 2N6039
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6035, 2N6038
2N6036, 2N6039
VCEO(sus)
60
80
--
--
Vdc
CollectorCutoff Current
(VCE = 60 Vdc, IB = 0)
2N6035, 2N6038
(VCE = 80 Vdc, IB = 0)
2N6036, 2N6039
ICEO
--
--
100
100
A
CollectorCutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N6035, 2N6038
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N6036, 2N6039
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125
_
C)
2N6035, 2N6038
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125
_
C)
2N6036, 2N6039
ICEX
--
--
--
--
100
100
500
500
A
CollectorCutoff Current
(VCB = 60 Vdc, IE = 0)
2N6035, 2N6038
(VCB = 80 Vdc, IE = 0)
2N6036, 2N6039
ICBO
--
--
0.5
0.5
mAdc
EmitterCutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
--
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
500
750
100
--
15,000
--
--
CollectorEmitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
VCE(sat)
--
--
2.0
3.0
Vdc
BaseEmitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc)
VBE(sat)
--
4.0
Vdc
BaseEmitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc)
VBE(on)
--
2.8
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal CurrentGain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
|hfe|
25
--
--
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6035, 2N6036
2N6038, 2N6039
Cob
--
--
200
100
pF
*Indicates JEDEC Registered Data.
Figure 2. Switching Times Test Circuit
4.0
0.04
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME
(s)
2.0
1.0
0.6
0.2
0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.4
0.8
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+8.0 V
V1
approx
-12 V
tr, tf
10 ns
DUTY CYCLE = 1.0%
25
s
0
RB
51
D1
+4.0 V
VCC
-30 V
RC
TUT
8.0 k
60
SCOPE
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
C
2N6035 2N6036 2N6038 2N6039
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5
ACTIVEREGION SAFEOPERATING AREA
1.0
5.0
Figure 5. 2N6035, 2N6036
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
0.1
7.0
10
30
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED
70
1.0
I C
, COLLECT
OR CURRENT
(AMP)
TJ = 150
C
dc
1.0 ms
100
s
Figure 6. 2N6038, 2N6039
0.7
0.5
0.2
20
2N6036
2N6035
0.3
1.0
5.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
0.1
7.0
10
30
50
100
70
1.0
I C
, COLLECT
OR CURRENT
(AMP)
0.7
0.5
0.2
20
2N6039
2N6038
0.3
5.0 ms
@ TC = 25
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100
s
1.0 ms
5.0 ms
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
TJ = 150
C
@ TC = 25
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
0.04
VR, REVERSE VOLTAGE (VOLTS)
10
0.4 0.6 1.0
2.0
40
4.0
0.06 0.1
0.2
C, CAP
ACIT
ANCE (pF)
100
50
30
TC = 25
C
Cib
70
Cob
PNP
NPN
Figure 7. Capacitance
20
6.0 10
20
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