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Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for generalpurpose amplifier and lowspeed
switching applications.
High DC Current Gain
hFE = 2500 (Typ) @ IC = 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) 2N6040, 2N6043
= 100 Vdc (Min) 2N6042, 2N6045
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc 2N6042, 2N6045
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
MAXIMUM RATINGS (1)
Rating
Symbol
2N6040
2N6043
2N6042
2N6045
Unit
CollectorEmitter Voltage
VCEO
60
100
Vdc
CollectorBase Voltage
VCB
60
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current Continuous
Peak
IC
8.0
16
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
75
0.60
Watts
W/
_
C
Operating and Storage Junction,
Temperature Range
TJ, Tstg
65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
1.67
_
C/W
Thermal Resistance, Junction to Ambient
JA
57
_
C/W
(1) Indicates JEDEC Registered Data.
80
0
0
20
40
60
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
40
20
60
140
TC
4.0
0
2.0
1.0
3.0
TA
TA
TC
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 4
1
Publication Order Number:
2N6040/D
2N6040
2N6042
2N6043
2N6045
*ON Semiconductor Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60100 VOLTS
75 WATTS
*
*
CASE 221A09
TO220AB
PNP
NPN
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4
2N6040 2N6042 2N6043 2N6045
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6040, 2N6043
2N6042, 2N6045
VCEO(sus)
60
100
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N6040, 2N6043
(VCE = 100 Vdc, IB = 0)
2N6042, 2N6045
ICEO
20
20
A
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N6040, 2N6043
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
2N6042, 2N6045
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150
_
C)
2N6040, 2N6043
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150
_
C)
2N6041, 2N6044
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150
_
C)
2N6042, 2N6045
ICEX
20
20
200
200
200
A
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N6040, 2N6043
(VCB = 100 Vdc, IE = 0)
2N6042, 2N6045
ICBO
20
20
A
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
2N6040, 2N6043,
(IC = 3.0 Adc, VCE = 4.0 Vdc)
2N6042, 2N6045
(IC = 8.0 Adc, VCE = 4.0 Vdc)
All Types
hFE
1000
1000
100
20.000
20,000
CollectorEmitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
2N6040, 2N6043,
(IC = 3.0 Adc, IB = 12 mAdc)
2N6042, 2N6045
(IC = 8.0 Adc, IB = 80 Adc)
All Types
VCE(sat)
2.0
2.0
4.0
Vdc
BaseEmitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)
VBE(sat)
4.5
Vdc
BaseEmitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
Output Capacitance
2N6040/2N6042
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6043/2N6045
Cob
300
200
pF
SmallSignal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
300
*Indicates JEDEC Registered Data.
Figure 2. Switching Times Equivalent Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME
(s)
2.0
1.0
0.5
0.05
0.2 0.3
0.5 0.7 1.0
2.0 3.0
10
0.3
0.7
tf
tr
ts
td @ VBE(off) = 0 V
V2
approx
+8.0 V
V1
approx
-12 V
tr, tf
10 ns
DUTY CYCLE = 1.0%
25
s
0
RB
51
D1
+4.0 V
VCC
-30 V
RC
TUT
8.0 k
120
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities and D1.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
3.0
0.2
0.1
0.07
5.0 7.0
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
C
PNP
NPN
2N6040 2N6042 2N6043 2N6045
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3
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
JC(t) = r(t)
JC
JC = 1.67
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.1
0.7
0.3
0.07
0.03
0.02 0.03
0.3
3.0
30
300
SINGLE PULSE
0.01
20
1.0
Figure 5. ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0 3.0
7.0
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
70
I C
, COLLECT
OR CURRENT
(AMP)
TJ = 150
C
dc
1.0 ms
100
s
0.5
0.2
0.05
5.0
2N6040, 2N6043
2N6045
0.1
10
20
30
500
s
5.0 ms
CURVES APPLY BELOW RATED VCEO
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
Figure 6. SmallSignal Current Gain
VR, REVERSE VOLTAGE (VOLTS)
30
0.5
1.0
2.0
100
5.0
0.1
0.2
C, CAP
ACIT
ANCE (pF)
200
70
50
TJ = 25
C
Cib
100
Cob
PNP
NPN
10,000
1.0
Figure 7. Capacitance
f, FREQUENCY (kHz)
10
2.0
5.0
20
50
1000
100
10
10
20
h fe
, SMALL-SIGNAL
CURRENT
GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
200
500
PNP
NPN
TC = 25
C
VCE = 4.0 Vdc
IC = 3.0 Adc
50
2N6040 2N6042 2N6043 2N6045
http://onsemi.com
4
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
20,000
0.1
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200
0.2 0.3
0.5
1.0
2.0
10
h FE
, DC CURRENT
GAIN
0.7
7.0
PNP
2N6040, 2N6042
NPN
2N6043, 2N6045
Figure 9. Collector Saturation Region
3.0
0.3
IB, BASE CURRENT (mA)
1.0
0.5
1.0
2.0
10
30
1.8
IC = 2.0 A
TJ = 25
C
4.0 A
2.2
2.6
0.7
5.0
3.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7 1.0
3.0
10
2.5
2.0
1.5
1.0
0.5
TJ = 25
C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V
,
VOL
T
AGE (VOL
TS)
VBE @ VCE = 4.0 V
2.0
10,000
TJ = 150
C
25
C
-55
C
20
IC, COLLECTOR CURRENT (AMP)
h FE
, DC CURRENT
GAIN
VCE = 4.0 V
TJ = 150
C
25
C
-55
C
1.4
6.0 A
IB, BASE CURRENT (mA)
TJ = 25
C
IC, COLLECTOR CURRENT (AMP)
V
,
VOL
T
AGE (VOL
TS)
7000
5000
3000
2000
1000
700
500
300
3.0
5.0
VCE = 4.0 V
20,000
0.1
200
0.2 0.3
0.5
1.0
2.0
10
0.7
7.0
10,000
7000
5000
3000
2000
1000
700
500
300
3.0
5.0
3.0
7.0
IC = 2.0 A
4.0 A
6.0 A
3.0
0.3
1.0
0.5
1.0
2.0
10
30
1.8
2.2
2.6
0.7
5.0
20
1.4
3.0
7.0
7.0
5.0
3.0
0.1
0.2 0.3
0.5 0.7 1.0
3.0
10
2.5
2.0
1.5
1.0
0.5
2.0
7.0
5.0
TJ = 25
C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
Figure 10. "On" Voltages
2N6040 2N6042 2N6043 2N6045
http://onsemi.com
5
PACKAGE DIMENSIONS
CASE 221A09
ISSUE AA
TO220AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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