NPN Darlington Silicon Power
Transistor
. . . designed for generalpurpose amplifier and low frequency
switching applications.
High DC Current Gain --
h
FE
= 3000 (Typ) @ I
C
= 4.0 Adc
CollectorEmitter Sustaining Voltage -- @ 100 mA
V
CEO(sus)
= 80 Vdc (Min)
Low CollectorEmitter Saturation Voltage --
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 4.0 Adc
= 3.0 Vdc (Max) @ I
C
= 8.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
MAXIMUM RATINGS (1)
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
V
CEO
80
Vdc
CollectorBase Voltage
V
CB
80
Vdc
EmitterBase Voltage
V
EB
5.0
Vdc
Collector Current -- Continuous
Peak
I
C
8.0
16
Adc
Base Current
I
B
120
mAdc
Total Device Dissipation @ T
C
= 25
_
C
Derate above 25
_
C
P
D
100
0.571
Watts
W/
_
C
Operating and Storage Junction Temperature
Range
T
J
, T
stg
65 to +200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.75
_
C/W
(1) Indicates JEDEC Registered Data
100
0
0
25
50
75
100
125
150
200
Figure 1. Power Derating
T
C
, TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
60
80
175
40
20
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev. 2
1
Publication Order Number:
2N6056/D
2N6056
ON Semiconductor Preferred Device
DARLINGTON
8 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
100 WATTS
CASE 107
TO204AA
(TO3)
2N6056
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2
*ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (2)
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
80
--
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
I
CEO
--
0.5
mAdc
Collector Cutoff Current
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc)
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc, T
C
= 150
_
C)
I
CEX
--
--
0.5
5.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
--
2.0
mAdc
ON CHARACTERISTICS (2)
DC Current Gain
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 3.0 Vdc)
h
FE
750
100
18000
--
--
CollectorEmitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 16 mAdc)
(I
C
= 8.0 Adc, I
B
= 80 mAdc)
V
CE(sat)
--
--
2.0
3.0
Vdc
BaseEmitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 80 mAdc)
V
BE(sat)
--
4.0
Vdc
BaseEmitter On Voltage
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc)
V
BE(on)
--
2.8
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter SmallSignal Short Circuit Current Transfer Ratio
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
|h
fe
|
4.0
--
--
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
C
ob
--
200
pF
SmallSignal Current Gain
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
h
fe
300
--
--
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%
2N6056
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3
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME
(s)
2.0
0.2
1.0
3.0
10
0.7
1.0
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0
V
2
approx
+12 V
V
1
approx
-8.0 V
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
25
s
0
R
B
51
D
1
+4.0 V
V
CC
-30 V
R
C
TUT
8.0 k
50
SCOPE
for t
d
and t
r
, D
1
is disconnected
and V
2
= 0
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.,
1N5825 USED ABOVE I
B
100 mA
MSD6100 USED BELOW I
B
100 mA
0.5
0.3
5.0 7.0
For NPN test circuit reverse diode, polarities and input pulses.
3.0
0.2
0.1
0.07
0.05
0.3
0.5 0.7
2.0
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
C
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.1
0.5
0.2
0.1
0.05
0.02
r(t)
, TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
JC
(t) = r(t) R
JC
R
JC
= 1.75
C/W 2N6056
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.2 0.3
3.0
30
300
0.7
7.0
70
700
2N6056
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4
ACTIVEREGION SAFE OPERATING AREA
50
1.0
Figure 5. Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
10
5.0
2.0
0.05
5.0
10
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMALLY LIMITED
@ T
C
= 25
C (SINGLE PULSE)
7.0
I C
, COLLECT
OR CURRENT
(AMP)
T
J
= 200
C
dc
0.1 ms
1.0
0.5
0.1
0.2
2.0 3.0
20
30
50 70 100
0.5 ms
1.0 ms
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200
_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
v 200_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
0.1
Figure 6. SmallSignal Current Gain
V
R
, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
100
5.0
0.2
0.5
C, CAP
ACIT
ANCE (pF)
200
70
50
T
J
= 25
C
100
C
ob
10,000
1.0
Figure 7. Capacitance
f, FREQUENCY (kHz)
10
2.0
5.0
20
50
1000
100
10
10
20
50
h fe
, SMALL-SIGNAL
CURRENT
GAIN
5000
3000
500
200
100
50
200
500
T
C
= 25
C
V
CE
= 3.0 Vdc
I
C
= 3.0 Adc
2000
1000
300
30
20
C
ib
2N6056
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5
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
Figure 10. "On" Voltage
I
C
, COLLECTOR CURRENT (AMP)
h FE
, DC CURRENT
GAIN
V
CE
= 3.0 V
T
J
= 150
C
25
C
-55
C
I
B
, BASE CURRENT (mA)
T
J
= 25
C
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 25
C
V
,
VOL
T
AGE (VOL
TS)
V
BE
@ V
CE
= 3.0 V
20,000
0.1
200
0.2
0.5
1.0
2.0
10
7.0
10,000
5000
3000
2000
1000
500
300
3.0
5.0
3.0
1.0
1.8
2.2
2.6
1.4
3.0
0.1
0.3
0.5
1.0
3.0
10
2.5
2.0
1.5
1.0
0.5
2.0
7.0
5.0
0.3
1.0
2.0
10
30
5.0
20
3.0
7.0
0.3
0.7
0.5 0.7
0.2
0.7
I
C
= 2.0 A
4.0 A
6.0 A
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
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