High-Power NPN Silicon
Transistors
. . . designed for use in industrialmilitary power amplifier and
switching circuit applications.
High CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 100 Vdc (Min) 2N6338
= 150 Vdc (Min) 2N6341
High DC Current Gain
h
FE
= 30 120 @ I
C
= 10 Adc
= 12 (Min) @ I
C
= 25 Adc
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 10 Adc
Fast Switching Times @ I
C
= 10 Adc
t
r
= 0.3 ms (Max)
t
s
= 1.0 ms (Max)
t
f
= 0.25 ms (Max)
*MAXIMUM RATINGS
Rating
Symbol
2N6338
2N6341
Unit
CollectorBase Voltage
V
CB
120
180
Vdc
CollectorEmitter Voltage
V
CEO
100
150
Vdc
EmitterBase Voltage
V
EB
6.0
Vdc
Collector Current
Continuous
Peak
I
C
25
50
Adc
Base Current
I
B
10
Adc
Total Device Dissipation
@ T
C
= 25
_
C
Derate above 25
_
C
P
D
200
1.14
Watts
W/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
0.875
_
C/W
*Indicates JEDEC Registered Data.
200
75
50
25
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
175
150
125
100
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
May, 2001 Rev. 10
1
Publication Order Number:
2N6338/D
2N6338
2N6341
*ON Semiconductor Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
*
CASE 107
TO204AA
(TO3)
2N6338 2N6341
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
2N6338
(I
C
= 50 mAdc, I
B
= 0)
2N6341
V
CEO(sus)
100
150
Vdc
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
2N6338
(V
CE
= 75 Vdc, I
B
= 0)
2N6341
I
CEO
50
50
Adc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
EB(off)
= 1.5 Vdc)
(V
CE
= Rated V
CEO
, V
EB(off)
= 1.5 Vdc, T
C
= 150
_
C)
I
CEX
10
1.0
Adc
mAdc
Collector Cutoff Current (V
CB
= Rated V
CB
, I
E
= 0)
I
CBO
10
Adc
Emitter Cutoff Current (V
BE
= 6.0 Vdc, I
C
= 0)
I
EBO
100
Adc
ON CHARACTERISTICS (1)
DC Current Gain)
(I
C
= 0.5 Adc, V
CE
= 2.0 Vdc)
(I
C
= 10 Adc, V
CE
= 2.0 Vdc)
(I
C
= 25 Adc, V
CE
= 2.0 Vdc)
h
FE
50
30
12
120
Collector Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 1.0 Adc)
(I
C
= 25 Adc, I
B
= 2.5 Adc)
V
CE(sat)
1.0
1.8
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 1.0 Adc)
(I
C
= 25 Adc, I
B
= 2.5 Adc)
V
BE(sat)
1.8
2.5
Vdc
BaseEmitter On Voltage (I
C
= 10 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (2)
(I
C
= 1.0 Adc, V
CE
= 10 Vdc, f
test
= 10 MHz)
f
T
40
MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
C
ob
300
pF
SWITCHING CHARACTERISTICS
Rise Time (V
CC
80 Vdc, I
C
= 10Adc, I
B1
= 1.0 Adc, V
BE(off)
= 6.0 Vdc)
t
r
0.3
s
Storage Time (V
CC
80 Vdc, I
C
= 10 Adc, I
B1
= I
B2
= 1.0 Adc)
t
s
1.0
s
Fall Time (V
CC
80 Vdc, I
C
= 10 Adc, I
B1
= I
B2
= 1.0 Adc)
t
f
0.25
s
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
(2) f
T
= |h
fe
|
f
test
.
Figure 2. Switching Time Test Circuit
1000
0.3
Figure 3. TurnOn Time
I
C
, COLLECTOR CURRENT (AMP)
t, TIME
(ns)
500
100
70
50
10
0.5 0.7
2.0 3.0
7.0
30
+ 11 V
0
V
CC
SCOPE
R
B
10 OHMS
- 5.0 V
t
r
, t
f
v 10 ns
DUTY CYCLE = 1.0%
R
C
8.0 OHMS
20
30
5.0
20
10
s
- 9.0 V
700
200
300
1.0
10
NOTE: For information on Figures 3 and 6, R
B
and R
C
were
varied to obtain desired test conditions.
+ 80 V
1N4933
t
d
@ V
BE(off)
= 6.0 V
V
CC
= 80 V
I
C
/I
B
= 10
T
J
= 25
C
t
r
2N6338 2N6341
http://onsemi.com
3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
JC
= r(t)
JC
JC
= 0.875
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3
3.0
30
300
100
2.0
Figure 5. Active Region Safe Operating Area
50
5.0
0.01
10
20
70
200
T
J
= 200
C
2N6338
2N6341
0.1
10
0.5
I C, COLLECT
OR CURRENT
(AMP)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
0.2
50
100
200
s
5.0 ms
1.0 ms
dc
2.0
0.02
0.05
1.0
3.0 5.0
30
7.0
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25
C (SINGLE PULSE)
SECOND BREAKDOWN
LIMITED CURVES APPLY
BELOW RATED V
CEO
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200
_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 200_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
0.3
Figure 6. TurnOff Time
I
C
, COLLECTOR CURRENT (AMP)
t, TIME
(s)
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05
0.5 0.7 1.0
2.0
5.0
10
20 30
V
CC
= 80 V
I
B1
= I
B2
I
C
/I
B
= 10
T
J
= 25
C
t
s
3.0
0.7
3.0
t
f
5000
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
50
0.5
1.0
2.0
5.0
20
50 100
10
C, CAP
ACIT
ANCE (pF)
700
500
200
100
T
J
= 25
C
C
ib
C
ob
3000
2000
1000
70
300
0.2
2N6338 2N6341
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
---
1.050
---
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
---
0.830
---
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
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