Plastic Medium-Power
Silicon Transistors
. . . designed for generalpurpose amplifier and lowspeed
switching applications.
High DC Current Gain --
hFE = 2500 (Typ) @ IC
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) -- 2N6387
= 80 Vdc (Min) -- 2N6388
Low CollectorEmitter Saturation Voltage --
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc -- 2N6387, 2N6388
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
TO220AB Compact Package
*MAXIMUM RATINGS
Rating
Symbol
2N6387
2N6388
Unit
CollectorEmitter Voltage
VCEO
60
80
Vdc
CollectorBase Voltage
VCB
60
80
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
10
15
10
15
Adc
Base Current
IB
250
mAdc
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
65
0.52
Watts
W/
_
C
Total Power Dissipation
@ TA = 25
_
C
Derate above 25
_
C
PD
2.0
0.016
Watts
W/
_
C
Operating and Storage Junction,
Temperature Range
TJ, Tstg
65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.92
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 10
1
Publication Order Number:
2N6387/D
2N6387
2N6388
*ON Semiconductor Preferred Device
DARLINGTON
8 AND 10 AMPERE
NPN SILICON
POWER TRANSISTORS
6080 VOLTS
65 WATTS
*
CASE 221A09
TO220AB
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4
2N6387 2N6388
http://onsemi.com
2
80
40
20
0
20
40
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
60
TA TC
4.0
2.0
1.0
3.0
0
60
140
TA
TC
2N6387 2N6388
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3
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N6387
2N6388
VCEO(sus)
60
80
--
--
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N6387
(VCE = 80 Vdc, IB = 0)
2N6388
ICEO
--
--
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6387
(VCE 80 Vdc, VEB(off) = 1.5 Vdc)
2N6388
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125
_
C)
2N6387
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125
_
C)
2N6388
ICEX
--
--
--
--
300
300
3.0
3.0
Adc
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
5.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
(IC = 1 0 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
hFE
1000
100
20,000
--
--
CollectorEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.01 Adc)
2N6387, 2N6388
(IC = 10 Adc, IB = 0.1 Adc)
2N6387, 2N6388
VCE(sat)
--
--
2.0
3.0
Vdc
BaseEmitter On Voltage
(IC = 5.0 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
(IC = 10 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
VBE(on)
--
--
2.8
4.5
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
|hfe|
20
--
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
200
pF
SmallSignal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
1000
--
--
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
2N6387 2N6388
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4
Figure 2. Switching Times Test Circuit
7.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMPS)
t, TIME
(s)
5.0
0.7
0.3
0.2
0.2
10
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
C
tf
0.07
1.0
5.0
ts
tr
0.1
1.0
3.0
0.5
2.0
0
VCC
+ 30 V
SCOPE
TUT
- 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V1
APPROX
+ 12 V
V2
APPROX
- 8 V
[ 8.0 k [ 120
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
RB
td
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
JC (t) = r(t) R
JC
R
JC = 1.92
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) Z
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r(t), TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
2N6387 2N6388
http://onsemi.com
5
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 100
C
SECOND BREAKDOWN LIMITED
20
1.0
Figure 5. Active-Region Safe Operating Area
2.0
0.03
10
20
80
TJ = 150
C
0.2
5.0
0.5
I C
, COLLECT
OR CURRENT
(AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
40
1.0
0.1
dc
2.0
60
4.0 6.0
50
s
10
s
CURVES APPLY BELOW RATED VCEO
5 ms
1 ms
50 ms
2N6387
2N6388
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
10,000
1.0
Figure 6. SmallSignal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0
10
20
50
100 200
1000
500
300
100
5000
h FE
, SMALL-SIGNAL
CURRENT
GAIN
20
3000
200
500
2000
1000
30
50
TC = 25
C
VCE = 4.0 Vdc
IC = 3.0 Adc
300
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
5.0
20
100
10
C, CAP
ACIT
ANCE (pF)
200
100
70
50
Cib
Cob
50
0.2
0.5
TJ = 25
C
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
0.1
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7 1.0
2.0
10
500
300
h FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
-55
C
VCE = 4.0 V
200
7.0
20,000
5000
10,000
3000
2000
1000
3.0
5.0
Figure 9. Collector Saturation Region
3.0
IB, BASE CURRENT (mA)
0.3
0.5
1.0
2.0 3.0
5.0 7.0
30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25
C
4.0 A
6.0 A
1.0
0.7
20
10
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