Complementary Silicon Plastic
Power Transistors
. . . designed for use in generalpurpose amplifier and switching
applications.
DC Current Gain Specified to 15 Amperes --
hFE = 20150 @ IC = 5.0 Adc
= 5.0 (Min) @ IC = 15 Adc
CollectorEmitter Sustaining Voltage --
VCEO(sus) = 60 Vdc (Min) 2N6487, 2N6490
= 80 Vdc (Min) 2N6488, 2N6491
High Current Gain -- Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc
TO220AB Compact Package
MAXIMUM RATINGS (1)
Rating
Symbol
2N6487
2N6490
2N6488
2N6491
Unit
CollectorEmitter Voltage
VCEO
60
80
Vdc
CollectorBase Voltage
VCB
70
90
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
IC
15
Adc
Base Current
IB
5.0
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
75
0.6
Watts
W/
_
C
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
PD
1.8
0.014
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.67
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
70
_
C/W
(1) Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 10
1
Publication Order Number:
2N6487/D
2N6487
2N6488
2N6490
2N6491
*ON Semiconductor Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
6080 VOLTS
75 WATTS
*
*
CASE 221A09
TO220AB
NPN
PNP
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4
2N6487 2N6488 2N6490 2N6491
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2
80
40
20
0
20
40
80
100
120
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
60
TA TC
4.0
2.0
1.0
3.0
0
60
140
TA
TC
0
2N6487 2N6488 2N6490 2N6491
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3
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N6487, 2N6490
2N6488, 2N6491
VCEO(sus)
60
80
--
Vdc
CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, VBE = 1.5 Vdc)
2N6487, 2N6490
2N6488, 2N6491
VCEX
70
90
--
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N6487, 2N6490
(VCE = 40 Vdc, IB = 0)
2N6488, 2N6491
ICEO
--
--
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)
2N6487, 2N6490
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)
2N6488, 2N6491
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
2N6487, 2N6490
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
2N6488, 2N6491
ICEX
--
--
--
--
500
500
5.0
5.0
Adc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
150
--
--
CollectorEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.5 Adc)
(IC = 15 Adc, IB = 5.0 Adc)
VCE(sat)
--
--
1.3
3.5
Vdc
BaseEmitter On Voltage
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
VBE(on)
--
--
1.3
3.5
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
fT
5.0
--
MHz
SmallSignal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
25
--
--
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
(2) fT = |hfe|
ftest.
2N6487 2N6488 2N6490 2N6491
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4
Figure 2. Switching Time Test Circuit
1000
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
t, TIME
(ns)
500
50
20
0.2
20
TC = 25
C
VCC = 30 V
IC/IB = 10
10
1.0
5.0
tr
0.5
2.0
10
200
100
td @ VBE(off) [ 5.0 V
NPN
PNP
+ 10 V
0
SCOPE
RB
- 4 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
- 10 V
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
VCC
+ 30 V
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
JC (t) = r(t) R
JC
R
JC = 1.67
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) Z
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r(t), TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
C
20
Figure 5. ActiveRegion Safe Operating Area
2.0
10
20
80
TJ = 150
C
0.2
5.0
0.5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
40
1.0
0.1
dc
2.0
60
4.0
2N6487, 2N6490
2N6488, 2N6491
CURVES APPLY BELOW RATED VCEO
5.0 ms
1.0 ms
500
s
100
s
I C
, COLLECT
OR CURRENT
(AMP)
There are two limitations on the power handling ability of
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
2N6487 2N6488 2N6490 2N6491
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5
C, CAP
ACIT
ANCE (pF)
300
VR, REVERSE VOLTAGE (VOLTS)
1.0
2.0
5.0
20
10
200
100
70
50
Cib
Cob
50
0.5
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (AMP)
t, TIME
(ns)
0.2
5.0
1.0
2.0
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
ts
0.5
tf
5000
100
200
1000
500
50
NPN
PNP
10
Figure 7. Capacitances
Cob
NPN
PNP
700
1000
TJ = 25
C
2N6487 2N6488 2N6490 2N6491
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6
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
500
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.5
0.2
10
1.0
2.0
100
50
h FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
-55
C
200
20
20
NPN
2N6487, 2N6488
PNP
2N6490, 2N6491
IC, COLLECTOR CURRENT (AMP)
h FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
-55
C
5.0
VCE = 2.0 V
VCE = 2.0 V
10
5.0
0.5
0.2
10
1.0
2.0
20
5.0
500
100
50
200
20
5.0
10
5.0
100
IC = 1.0 A
TJ = 25
C
10
4.0 A
8.0 A
20
50
2000
1000
200 500
Figure 9. Collector Saturation Region
2.0
IB, BASE CURRENT (mA)
5.0
100
5000
1.8
1.6
1.4
1.2
IC = 1.0 A
TJ = 25
C
0
10
4.0 A
8.0 A
20
50
1.0
0.2
0.6
0.8
0.4
2000
1000
200 500
5000
2.0
1.8
1.6
1.4
1.2
0
1.0
0.2
0.6
0.8
0.4
IB, BASE CURRENT (mA)
VCE(sat) @ IC/IB = 10
TJ = 25
C
VBE @ VCE = 2.0 V
2.8
1.6
1.2
2.4
0
0.8
0.4
0.2
0.5
2.0
20
10
1.0
5.0
VBE(sat) @ IC/IB = 10
2.0
IC, COLLECTOR CURRENT (AMP)
V
,
VOL
T
AGE (VOL
TS)
Figure 10. "On" Voltages
IC, COLLECTOR CURRENT (AMP)
V
,
VOL
T
AGE (VOL
TS)
VCE(sat) @ IC/IB = 10
TJ = 25
C
VBE @ VCE = 2.0 V
2.8
1.6
1.2
2.4
0
0.8
0.4
0.2
0.5
2.0
20
10
1.0
5.0
VBE(sat) = IC/IB = 10
2.0
2N6487 2N6488 2N6490 2N6491
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7
PACKAGE DIMENSIONS
CASE 221A09
ISSUE AA
TO220AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2N6487 2N6488 2N6490 2N6491
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8
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