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Электронный компонент: 2N7000RLRP

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Semiconductor Components Industries, LLC, 2000
November, 2000 Rev. 5
1
Publication Order Number:
2N7000/D
2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
NChannel TO92
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M
)
VDGR
60
Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp
50
s)
VGS
VGSM
20
40
Vdc
Vpk
Drain Current
Continuous
Pulsed
ID
IDM
200
500
mAdc
Total Power Dissipation @ TC = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
+150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
R
JA
357
C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16
from case
for 10 seconds
TL
300
C
2N7000
Y
= Year
WW
= Work Week
YWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO92
CASE 29
Style 22
NChannel
S
1 2
3
1
Source
3
Drain
2
Gate
200 mAMPS
60 VOLTS
RDS(on) = 5
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
2N7000
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10
Adc)
V(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125
C)
IDSS

1.0
1.0
Adc
mAdc
GateBody Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
IGSSF
10
nAdc
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
3.0
Vdc
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
rDS(on)

5.0
6.0
Ohm
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VDS(on)

2.5
0.45
Vdc
OnState Drain Current
(VGS = 4.5 Vdc, VDS = 10 Vdc)
Id(on)
75
mAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc)
gfs
100
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
60
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f
1 0 MH )
Coss
25
Reverse Transfer
Capacitance
( DS
,
GS
,
f = 1.0 MHz)
Crss
5.0
SWITCHING CHARACTERISTICS
(Note 1.)
TurnOn Delay Time
(VDD = 15 V, ID = 500 mA,
ton
10
ns
TurnOff Delay Time
(VDD 15 V, ID 500 mA,
RG = 25
W
, RL = 30
W
, Vgen = 10 V)
toff
10
1. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
2N7000
http://onsemi.com
3
I D
, DRAIN CURRENT
(AMPS)
r DS(on)
, ST
A
TIC DRAIN-SOURCE ON-RESIST
ANCE
(NORMALIZED)
V GS(th)
,
THRESHOLD VOL
T
AGE (NORMALIZED)
I D
, DRAIN CURRENT
(AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
10
0
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
+100
+140
-60
-20
+20
+60
+100
+140
T, TEMPERATURE (
C)
Figure 3. Temperature versus Static
DrainSource OnResistance
T, TEMPERATURE (
C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25
C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V
-55
C
25
C
125
C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
ORDERING INFORMATION
Device
Package
Shipping
2N7000
TO92
1000 Unit/Box
2N7000RLRA
TO92
2000 Tape & Reel
2N7000RLRM
TO92
2000 Ammo Pack
2N7000RLRP
TO92
2000 Ammo Pack
2N7000ZL1
TO92
2000 Ammo Pack
2N7000
http://onsemi.com
4
PACKAGE DIMENSIONS
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
TO92
CASE 2911
ISSUE AL
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
CENTRAL/SOUTH AMERICA:
Spanish Phone: 3033087143 (MonFri 8:00am to 5:00pm MST)
Email: ONlitspanish@hibbertco.com
TollFree from Mexico: Dial 018002882872 for Access
then Dial 8662979322
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Phone: 3036752121 (TueFri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
00180044223781
Email: ONlitasia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
2N7000/D
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Fax Response Line: 3036752167 or 8003443810 Toll Free USA/Canada
N. American Technical Support: 8002829855 Toll Free USA/Canada
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