Semiconductor Components Industries, LLC, 2004
July, 2004 - Rev. 3
1
Publication Order Number:
BAL99LT1/D
BAL99LT1
Switching Diode
Features
Pb-Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
V
R
70
Vdc
Peak Forward Current
I
F
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR- 5 Board
(Note 1), T
A
= 25
C
Derate above 25
C
P
D
225
1.8
mW
mW/
C
Thermal Resistance,
Junction-to-Ambient
R
q
JA
556
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25
C
Derate above 25
C
P
D
300
2.4
mW
mW/
C
Thermal Resistance,
Junction-to-Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
- 55 to +150
C
1. FR- 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
SOT-23
CASE 318
STYLE 18
http://onsemi.com
JF
Specific Device Code
M
= Date Code
MARKING DIAGRAM
ANODE
3
CATHODE
2
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
BAL99LT1
SOT-23
3000 / Tape & Reel
BAL99LT1G
SOT-23
(Pb-Free)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
JF M
BAL99LT1
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150
C)
(V
R
= 70 Vdc, T
J
= 150
C)
I
R
-
-
-
2.5
30
50
m
Adc
Reverse Breakdown Voltage, (I
R
= 100
m
Adc)
V
(BR)
70
-
Vdc
Forward Voltage,
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
-
-
-
-
715
855
1000
1250
mV
Recovery Current, (I
F
= 10 mAdc, V
R
= 5.0 Vdc, R
L
= 500
W
)
Q
S
-
45
pC
Diode Capacitance, (V
R
= 0, f = 1.0 MHz)
C
D
-
1.5
pF
Reverse Recovery Time,
(I
F
= I
R
= 10 mAdc, R
L
= 100
W
, measured at I
R
= 1.0 mAdc)
t
rr
-
6.0
ns
Forward Recovery Voltage, (I
F
= 10 mAdc, t
r
= 20 ns)
V
FR
-
1.75
Vdc
TYPICAL CHARACTERISTICS
I R
, REVERSE CURRENT
(A)
100
0.2
0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6
0.8
1.0
1.2
10
1.0
0.1
T
A
= 85
C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10
20
30
40
50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C D
, DIODE CAP
ACIT
ANCE (pF)
2
4
6
8
I F
, FOR
W
ARD CURRENT
(mA)
T
A
= 25
C
T
A
= -40
C
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 55
C
T
A
= 25
C
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Capacitance
BAL99LT1
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3
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AH
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318-03 AND -07 OBSOLETE, NEW
STANDARD 318-08.
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
BAL99LT1
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4
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BAL99LT1/D
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