Publication Order Number:
BAT54SLT1/D
Semiconductor Components Industries, LLC, 2005
October, 2005 - Rev. 9
1
BAT54SLT1
Preferred Device
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage - 0.35 V (Typ) @ I
F
= 10 mAdc
Pb-Free Package is Available
MAXIMUM RATINGS
(T
J
= 125
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
V
Forward Power Dissipation
@ T
A
= 25
C
Derate above 25
C
P
F
225
1.8
mW
mW/
C
Forward Current (DC)
I
F
200 Max
mA
Junction Temperature
T
J
-55 to 125
C
Storage Temperature Range
T
stg
-55 to +150
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
30 VOLT
DUAL HOT-CARRIER
DETECTOR AND SWITCHING
DIODES
3
CATHODE/ANODE
1
ANODE
2
CATHODE
Device
Package
Shipping
ORDERING INFORMATION
BAT54SLT1
SOT-23
3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
BAT54SLT1G
SOT-23
(Pb-Free)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT-23
CASE 318
STYLE 11
MARKING
DIAGRAM
1
2
3
1
LD3M
G
G
LD3
= Device Code
M
= Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BAT54SLT1
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10
m
A)
V
(BR)R
30
-
-
V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
-
7.6
10
pF
Reverse Leakage
(V
R
= 25 V)
I
R
-
0.5
2.0
m
Adc
Forward Voltage
(I
F
= 0.1 mAdc)
V
F
-
0.22
0.24
Vdc
Forward Voltage
(I
F
= 30 mAdc)
V
F
-
0.41
0.5
Vdc
Forward Voltage
(I
F
= 100 mAdc)
V
F
-
0.52
0.8
Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
t
rr
-
-
5.0
ns
Forward Voltage
(I
F
= 1.0 mAdc)
V
F
-
0.29
0.32
Vdc
Forward Voltage
(I
F
= 10 mAdc)
V
F
-
0.35
0.40
Vdc
Forward Current (DC)
I
F
-
-
200
mAdc
Repetitive Peak Forward Current
I
FRM
-
-
300
mAdc
Non-Repetitive Peak Forward Current
(t < 1.0 s)
I
FSM
-
-
600
mAdc
BAT54SLT1
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3
C
T
, T
O
T
AL
CAP
ACIT
ANCE (pF)
Notes: 1. A 2.0 k
W
variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
t
rr
+10 V
2 k
820
W
0.1
m
F
DUT
V
R
100
m
H
0.1
m
F
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
T
10%
90%
I
F
I
R
t
rr
T
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.0
0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2
0.3
0.4
0.5
10
1.0
0.1
85
C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5
10
15
20
25
14
0
V
R
, REVERSE VOLTAGE (VOLTS)
12
4
2
0
5
10
15
30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
-40
C
25
C
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
0.6
-55
C
1 50
C
1 25
C
100
1000
30
25
20
6
8
10
I
R
, REVERSE CURRENT (
m
A)
I
F
, FOR
W
ARD CURRENT (mA)
BAT54SLT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AN
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
D
A1
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW
STANDARD 318-08.
VIEW C
L
0.25
L1
q
e
E
E
b
A
SEE VIEW C
DIM
A
MIN
NOM
MAX
MIN
MILLIMETERS
0.89
1.00
1.11
0.035
INCHES
A1
0.01
0.06
0.10
0.001
b
0.37
0.44
0.50
0.015
c
0.09
0.13
0.18
0.003
D
2.80
2.90
3.04
0.110
E
1.20
1.30
1.40
0.047
e
1.78
1.90
2.04
0.070
L
0.10
0.20
0.30
0.004
0.040
0.044
0.002
0.004
0.018
0.020
0.005
0.007
0.114
0.120
0.051
0.055
0.075
0.081
0.008
0.012
NOM
MAX
L1
H
2.10
2.40
2.64
0.083
0.094
0.104
H
E
0.35
0.54
0.69
0.014
0.021
0.029
c
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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BAT54SLT1/D
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