1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage -- 0.35 Volts (Typ) @ IF = 10 mAdc
MAXIMUM RATINGS
(TJ = 125
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts
Forward Power Dissipation, FR5 Board(1)
@ TA = 25
C
Derate above 25
C
PF
400
3.2
mW
mW/
C
Thermal Resistance, Junction to Case
R
JL
174
C/W
Thermal Resistance, Junction to Ambient
R
JA
492
C/W
Forward Current (DC)
IF
200 Max
mA
NonRepetitive Peak Forward Current
tp < 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
IFRM
300
mA
Junction Temperature
TJ
125 Max
C
Storage Temperature Range
Tstg
55 to +150
C
DEVICE MARKING
BAT54T1 = BU
1. FR-5 = 1.0 x 0.75 x 0.062 in.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
Order this document
by BAT54T1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BAT54T1
Motorola Preferred Device
CASE 425 04, STYLE 1
SOD 123
1
2
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODE
Motorola, Inc. 1997
1
Cathode
2
Anode
REV 4
BAT54T1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10
A)
V(BR)R
30
--
--
Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
--
7.6
10
pF
Reverse Leakage (VR = 25 V)
IR
--
0.5
2.0
Adc
Forward Voltage (IF = 0.1 mAdc)
VF
--
0.22
0.24
Vdc
Forward Voltage (IF = 30 mAdc)
VF
--
0.41
0.5
Vdc
Forward Voltage (IF = 100 mAdc)
VF
--
0.52
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
--
--
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
VF
--
0.29
0.32
Vdc
Forward Voltage (IF = 10 mAdc)
VF
--
0.35
0.40
Vdc
Forward Current (DC)
IF
--
--
200
mAdc
Repetitive Peak Forward Current
IFRM
--
--
300
mAdc
NonRepetitive Peak Forward Current (t < 1.0 s)
IFSM
--
--
600
mAdc
BAT54T1
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp trr
+10 V
2 k
820
0.1
F
DUT
VR
100
H
0.1
F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.0
0.1
VF, FORWARD VOLTAGE (VOLTS)
0.2
0.3
0.4
0.5
10
1.0
0.1
85
C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5
10
15
20
25
14
0
VR, REVERSE VOLTAGE (VOLTS)
12
4
2
0
C
T
, T
O
T
A
L
CAP
ACIT
ANCE (pF)
5
10
15
30
I F
, FOR
W
ARD
CURRENT
(mA)
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
40
C
25
C
TA = 150
C
TA = 125
C
TA = 85
C
TA = 25
C
I R
, REVERSE CURRENT
(
A)
0.6
55
C
1 50
C
1 25
C
100
1000
30
25
20
6
8
10
BAT54T1
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOD123 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOD123
mm
inches
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
SOD123 POWER DISSIPATION
The power dissipation of the SOD123 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R
JA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOD123
package, PD can be calculated as follows:
PD =
TJ(max) TA
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150
C 25
C
556
C/W
= 225 milliwatts
The 556
C/W for the SOD123 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOD123 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad
TM
. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10
C.
The soldering temperature and time shall not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
BAT54T1
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 42504
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE
2. ANODE
B
D
K
A
C
E
J
1
2
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.055
0.071
1.40
1.80
B
0.100
0.112
2.55
2.85
C
0.037
0.053
0.95
1.35
D
0.020
0.028
0.50
0.70
E
0.004
0.25
H
0.000
0.004
0.00
0.10
J
0.006
0.15
K
0.140
0.152
3.55
3.85
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals"
must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.
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