Semiconductor Components Industries, LLC, 2001
May, 2000 Rev. 1
1
Publication Order Number:
BAV70TT1/D
BAV70TT1
Preferred Device
Dual Switching Diode
MAXIMUM RATINGS
(TA = 25
C)
Rating
Symbol
Max
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR4 Board (1)
TA = 25
C
Derated above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance,
Junction to Ambient (1)
R
JA
555
C/W
Total Device Dissipation,
FR4 Board (2)
TA = 25
C
Derated above 25
C
PD
360
2.9
mW
mW/
C
Thermal Resistance,
Junction to Ambient (2)
R
JA
345
C/W
Junction and Storage
Temperature Range
TJ, Tstg
55 to
+150
C
(1) FR4 @ Minimum Pad
(2) FR4 @ 1.0
1.0 Inch Pad
Device
Package
Shipping
ORDERING INFORMATION
BAV70TT1
SOT416
http://onsemi.com
CASE 463
SOT416/SC75
STYLE 3
3000 / Tape & Reel
DEVICE MARKING
A4
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
3
CATHODE
ANODE
1
2
ANODE
BAV70TT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100
Adc)
V(BR)
70
--
Vdc
Reverse Voltage Leakage Current (Note 3)
(VR = 70 Vdc)
(VR = 50 Vdc)
IR
IR
--
--
5.0
100
Adc
nAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
--
1.5
pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
--
--
--
--
715
855
1000
1250
mVdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100
, IR(REC) = 1.0 mAdc) (Figure 1)
trr
--
6.0
ns
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
VRF
--
1.75
V
(3) For each individual diode while the second diode is unbiased.
BAV70TT1
http://onsemi.com
5
1.4
1
0.5 min. (3x)
0.5 min. (3x)
TYPICAL
0.5
SOLDERING PATTERN
Unit: mm
PD =
TJ(max) TA
R
JA
PD =
150
C 25
C
833
C/W
= 150 milliwatts
The soldering temperature and time should not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied dur-
ing cooling
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
INFORMATION FOR USING THE SOT416 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
SOT416/SC90 POWER DISSIPATION
The power dissipation of the SOT416/SC90 is a func-
tion of the pad size. This can vary from the minimum pad
size for soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device
is determined by TJ(max), the maximum rated junction tem-
perature of the die, R
JA, the thermal resistance from the
device junction to ambient; and the operating temperature,
TA. Using the values provided on the data sheet, PD can be
calculated as follows.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
C, one
can calculate the power dissipation of the device which in
this case is 125 milliwatts.
The 833
C/W assumes the use of the recommended foot-
print on a glass epoxy printed circuit board to achieve a
power dissipation of 150 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad
TM
. Using a board material such
as Thermal Clad, a higher power dissipation can be
achieved using the same footprint.
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10
C.
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