Semiconductor Components Industries, LLC, 2004
September, 2004 - Rev. 3
1
Publication Order Number:
BAV99LT1/D
BAV99LT1
Preferred Device
Dual Series
Switching Diode
Features
Pb-Free Packages are Available
MAXIMUM RATINGS
(Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
Vdc
Forward Current
I
F
215
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
V
RRM
70
V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
I
F(AV)
715
mA
Repetitive Peak Forward Current
I
FRM
450
mA
Non-Repetitive Peak Forward Current
t = 1.0
m
s
t = 1.0 ms
t = 1.0 s
I
FSM
2.0
1.0
0.5
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR- 5 Board (Note 1) T
A
= 25
C
Derate above 25
C
P
D
225
1.8
mW
mW/
C
Thermal Resistance, Junction-to-Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25
C
Derate above 25
C
P
D
300
2.4
mW
mW/
C
Thermal Resistance, Junction-to-Ambient
R
q
JA
417
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
- 65 to
+150
C
1. FR- 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
CASE 318
SOT-23
STYLE 11
BAV99LT1
SOT-23
3000/Tape & Reel
MARKING DIAGRAM
A7 M
A7 = Device Code
M = Date Code
1
2
3
Preferred devices are recommended choices for future use
and best overall value.
3
CATHODE/ANODE
ANODE
1
CATHODE
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV99LT3G
SOT-23
(Pb-Free)
10,000/Tape & Reel
BAV99LT1G
SOT-23
(Pb-Free)
3000/Tape & Reel
BAV99LT3
SOT-23
10,000/Tape & Reel
http://onsemi.com
BAV99LT1
http://onsemi.com
2
OFF CHARACTERISTICS
(T
A
= 25
C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage,
(I
(BR)
= 100
m
A)
V
(BR)
70
-
Vdc
Reverse Voltage Leakage Current,
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150
C)
(V
R
= 70 Vdc, T
J
= 150
C)
I
R
-
-
-
2.5
30
50
m
Adc
Diode Capacitance,
(V
R
= 0, f = 1.0 MHz)
C
D
-
1.5
pF
Forward Voltage,
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
-
-
-
-
715
855
1000
1250
mVdc
Reverse Recovery Time,
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc) R
L
= 100
W
t
rr
-
6.0
ns
Forward Recovery Voltage,
(I
F
= 10 mA, t
r
= 20 ns)
V
FR
-
1.75
V
BAV99LT1
http://onsemi.com
3
CURVES APPLICABLE TO EACH DIODE
I R
, REVERSE CURRENT
(A)
100
0.2
0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6
0.8
1.0
1.2
10
1.0
0.1
T
A
= 85
C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10
20
30
40
50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C D
, DIODE CAP
ACIT
ANCE (pF)
2
4
6
8
I F
, FOR
W
ARD CURRENT
(mA)
T
A
= 25
C
T
A
= -40
C
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 55
C
T
A
= 25
C
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Capacitance
BAV99LT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT-23 (TO-236)
PLASTIC PACKAGE
CASE 318-08
ISSUE AK
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW
STANDARD 318-08.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81-3-5773-3850
BAV99LT1/D
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