Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC327
Unit
CollectorEmitter Voltage
VCEO
45
Vdc
CollectorBase Voltage
VCBO
50
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current Continuous
IC
800
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
45
Vdc
CollectorEmitter Breakdown Voltage
(IC = 100
A, IE = 0)
V(BR)CES
50
Vdc
EmitterBase Breakdown Voltage
(IE = 10
m
A, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
ICBO
100
nAdc
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
ICES
100
nAdc
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
100
nAdc
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
May, 2001 Rev. 2
1
Publication Order Number:
BC327/D
BC327,
BC327-16,
BC327-25,
BC327-40
CASE 2911, STYLE 17
TO92 (TO226AA)
1
2
3
COLLECTOR
1
2
BASE
3
EMITTER
BC327, BC32716, BC32725, BC32740
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
BC327
BC32716
BC32725
BC32740
(IC = 300 mA, VCE = 1.0 V)
hFE
100
100
160
250
40
630
250
400
630
BaseEmitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
VBE(on)
1.2
Vdc
CollectorEmitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
0.7
Vdc
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
11
pF
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
260
MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t)
, NORMALIZED EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
JC(t) = (t)
JC
JC = 100
C/W MAX
JA(t) = r(t)
JA
JA = 375
C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
SINGLE PULSE
BC327, BC32716, BC32725, BC32740
http://onsemi.com
3
-1000
-10
-100
-1.0
-3.0
-10
-30
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Active Region Safe Operating Area
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN
-100
1000
10
-1000
-0.1
-10
-100
100
-1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
1.0 s
TJ = 135
C
100
s
VCE = -1.0 V
TA = 25
C
TA = 25
C
TC = 25
C
dc
dc
(APPLIES BELOW RATED VCEO)
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 5. "On" Voltages
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 7. Capacitances
-0.1
-1.0
-1.0
-10
-100
-1000
-2.0
-1.0
0
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS
)
V
,
VOL
T
AGE (VOL
TS)
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
C, CAP
ACIT
ANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01
-0.1
-10
-100
-1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0
-10
-1000
-100
-10
-100
TJ = 25
C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
TA = 25
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -1.0 V
VCE(sat) @ IC/IB = 10
VC for VCE(sat)
VB for VBE
Cob
Cib
BC327, BC32716, BC32725, BC32740
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 2911
ISSUE AL
TO92 (TO226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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BC327/D
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