1
Motorola Bipolar Power Transistor Device Data
Plastic Medium Power NPN
Silicon Transistor
. . . designed for power output stages for television, radio, phonograph and other
consumer product applications.
Suitable for Transformerless, LineOperated Equipment
Thermopad
{
Construction Provides High Power Dissipation Rating for High
Reliability
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
VCEO
350
Vdc
CollectorBase Voltage
VCB
375
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
0.5
1.0
Adc
Base Current
IB
0.25
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
20
0.16
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
6.25
_
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
BVCEO
350
--
Vdc
Collector Cutoff Current
(At rated voltage)
ICBO
--
100
Adc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
--
100
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
240
--
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD159/D
Motorola, Inc. 1998
BD159
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS
20 WATTS
CASE 7709
TO225AA TYPE
BD159
2
Motorola Bipolar Power Transistor Device Data
25
20
15
10
5.0
0
20
40
60
80
100
120
140
160
Figure 1. PowerTemperature Derating Curve
TC, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
1.0
10
Figure 2. "On" Voltages
IC, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0.2
0
20
30
50
100
200 300
500
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10
TJ = + 25
C
VBE @ IC/IB = 10
IC/IB = 5.0
V
,
VOL
T
AGE
(VOL
TS)
1.0
10
Figure 3. DC Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.01
20
30
50
100
300
200
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.03
0.02
I C
, COLLECT
OR
CURRENT
(AMPS)
TJ = 150
C
dc
500
s
10
s
1.0 ms
The Safe Operating Area Curves indicate IC VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum TJ, powertempera-
ture derating must be observed for both steady state and
pulse power conditions.
Figure 4. Current Gain
IC, COLLECTOR CURRENT (mAdc)
10
1.0
2.0
3.0
5.0
10
20
30
50
100
200
300
500
300
200
70
30
20
TJ = 150
C
h
FE
, DC CURRENT
GAIN
50
100
+ 100
C
+ 25
C
55
C
7.0
70
VCE = 10 V
VCE = 2.0 V
BD159
4
Motorola Bipolar Power Transistor Device Data
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BD159/D
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