1
Motorola Bipolar Power Transistor Device Data
Plastic Medium Power Silicon
NPN Transistor
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
DC Current Gain -- hFE = 40 (Min) @ IC = 0.15 Adc
BD179 is complementary with BD180
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
80
Vdc
CollectorBase Voltage
VCBO
80
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current
IC
3.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
30
240
Watts
mw/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
4.16
_
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
V(BR)CEO
80
--
Vdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
--
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
BD17910
(IC = 1.0 A, VCE = 2.0 V)
ALL
hFE
63
15
160
--
CollectorEmitter Saturation Voltage*
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
--
0.8
Vdc
BaseEmitter On Voltage*
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
--
1.3
Vdc
CurrentGain Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
3.0
--
MHz
* Pulse Test: Pulse Width
x
300 As, Duty Cycle
x
2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD179/D
Motorola, Inc. 1995
BD179
BD179-10
3.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS
30 WATTS
CASE 7708
TO225AA TYPE
REV 7
BD179 BD179-10
2
Motorola Bipolar Power Transistor Device Data
Figure 1. Active Region Safe Operating Area
10
2.0
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
3.0
5.0 7.0
10
20
30
50
100
SECONDARY BREAKDOWN LIMITATION
THERMAL LIMITATION
(BASEEMITTER DISSIPATION IS
SIGNIFICANT ABOVE IC = 2.0 AMP)
PULSE DUTY CYCLE < 10%
70
0.3
0.2
I C
, COLLECT
OR CURRENT
(AMP)
TJ = 150
C
dc
5.0 ms
1.0
100
s
1.0 ms
The Safe Operating Area Curves indicate IC VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, powertemperature
derating must be observed for both steady state and pulse
power conditions.
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0
0.2
0.8
0.6
0.4
0.2
1.0
2.0
10
30
50
200
IC = 0.1 A
0.25 A
1.0 A
0.5 A
0.3
0.5
100
20
3.0
5.0
TJ = 25
C
h
FE
, DC CURRENT
GAIN (NORMALIZED)
1000
Figure 3. Current Gain
IC, COLLECTOR CURRENT (mA)
10
100
TJ = + 150
C
TJ = + 55
C
VCE = 2.0 V
700
500
300
200
70
50
30
20
TJ = + 25
C
3.0 5.0
10
20 30
50
2000
2.0
100
200
1000
300 500
Figure 4. "On" Voltages
0
1.5
3.0 5.0
10
20 30
50
2000
2.0
100
200
1000
300 500
1.2
0.9
0.6
0.3
IC, COLLECTOR CURRENT (mA)
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOL
T
AGE (VOL
TS)
VBE @ VCE = 2.0 V
Figure 5. Thermal Response
t, TIME or PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t)
, NORMALIZED EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
1000
500
JC(t) = r(t)
JC
JC = 4.16
C/W MAX
JC = 3.5
C/W TYP
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
D = 0.2
D = 0.1
D = 0.05
D = 0.01
BD179 BD179-10
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 7708
TO225AA TYPE
ISSUE V
STYLE 1:
PIN 1.
EMITTER
2.
COLLECTOR
3.
BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.055
1.15
1.39
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
1.02
_
_
BD179 BD179-10
4
Motorola Bipolar Power Transistor Device Data
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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
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BD179/D
*BD179/D*
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