1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
CollectorEmitter Saturation Voltage --
VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
CollectorEmitter Sustaining Voltage --
VCEO(sus) = 80 Vdc (Min.) BD242B
VCEO(sus)
= 100 Vdc (Min.) BD241C, BD242C
High Current Gain -- Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package
MAXIMUM RATINGS
Rating
Symbol
BD242B
BD241C
BD242C
Unit
CollectorEmitter Voltage
VCEO
80
100
Vdc
CollectorEmitter Voltage
VCES
90
115
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
3.0
5.0
Adc
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
40
0.32
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
Thermal Resistance, Junction to Case
R
JC
3.125
_
C/W
40
30
20
10
0
0
20
40
60
80
100
120
140
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD241C/D
Motorola, Inc. 1998
BD241C
BD242B
BD242C
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
40 WATTS
*Motorola Preferred Device
*
*
CASE 221A09
TO220AB
NPN
PNP
BD241C BD242B BD242C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage1
(IC = 30 mAdc, IB = 0)
BD242B
BD241C, BD242C
VCEO
80
100
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
BD241C, BD242B, BD242C
ICEO
0.3
mAdc
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
BD242B
(VCE = 100 Vdc, VEB = 0)
BD241C, BD242C
ICES
200
200
Adc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS1
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
25
10
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 600 Adc)
VCE(sat)
1.2
Vdc
BaseEmitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product2
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
3.0
MHz
SmallSignal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
20
1 Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
2 fT = |hfe|
ftest.
2.0
0.03
IC, COLLECTOR CURRENT (AMP)
t, TIME
(
s
)
1.0
0.7
0.5
0.3
0.1
0.07
0.02
0.05
0.1
0.3
0.5 0.7 1.0
3.0
td @ VBE(off) = 2.0 V
IC/IB = 10
TJ = 25
C
tr @ VCC = 30 V
tr @ VCC = 10 V
0.07
0.03
0.05
Figure 2. Switching Time Equivalent Circuit
Figure 3. TurnOn Time
APPROX
+ 11 V
TURN-ON PULSE
Vin 0
t1
VEB(off)
APPROX 9.0 V
TURN-OFF PULSE
Vin
t3
t2
APPROX
+ 11 V
VCC
SCOPE
RK
Cjd
%
Ceb
4.0 V
t1
v
7.0 ns
100
t
t2
t
500
s
t3
t
15 ns
DUTY CYCLE
[
2.0%
Vin
RL
BD241C BD242B BD242C
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
JC (t) = r(t) R
JC
R
JC = 3.125
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) Z
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r(t), TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
SECOND BREAKDOWN
LIMITED @ TJ
v
150
C
THERMAL LIMITATION @ TC = 25
C
BONDING WIRE LIMITED
CURVES APPLY BELOW
RATED VCEO
10
5.0
Figure 5. Active Region Safe Operating Area
IC, COLLECTOR CURRENT (AMP)
5.0
1.0
0.1
10
20
50
100
BD242B
BD241C, BD242C
5.0 ms
100
s
1.0 ms
0.2
2.0
0.5
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C, TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
3.0
0.03
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (AMP)
tf @ VCC = 30 V
t, TIME
(
s
)
2.0
1.0
0.5
0.3
0.2
0.1
0.05
0.03
0.05 0.07 0.1
0.2
0.5
1.0
2.0
3.0
tf @ VCC = 10 V
IB1 = IB2
IC/IB = 10
ts
= ts 1/8 tf
TJ = 25
C
ts
0.3
0.7
0.07
0.7
300
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0 3.0
5.0
20 30 40
10
0.2 0.3
0.5
CAP
ACIT
ANCE (pF)
200
100
70
50
TJ = + 25
C
Ceb
Ccb
BD241C BD242B BD242C
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
500
0.03
5.0
0.05 0.07 0.1
0.3
0.5
1.0
3.0
100
50
30
10
300
70
TJ = 150
C
25
C
55
C
VCE = 2.0 V
0.7
7.0
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
1.4
0.003
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
0.01 0.020.03
0.1
0.2
0.5
1.0
2.0 3.0
0.8
0.6
0.4
0.2
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
,
VOL
T
AGE
(VOL
TS)
2.0
1.0
Figure 10. "On" Voltages
IB, BASE CURRENT (mA)
0
2.0
5.0
10
20
50
100 200
500
1000
1.6
1.2
0.8
0.4
IC = 0.3 A
TJ = 25
C
1.0 A
3.0 A
h
FE
, DC CURRENT
GAIN
+ 2.5
0.003
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.01 0.02
0.05
0.1
0.2 0.3
1.0
2.0 3.0
V
, TEMPERA
TURE COEFFICIENTS (mV/
C)
+ 2.0
+ 1.5
+ 0.5
0
0.5
1.0
1.5
2.0
2.5
VB FOR VBE
*
VC FOR VCE(sat)
*APPLIES FOR IC/IB
5.0
TJ = 65
C TO + 150
C
103
0.4
Figure 12. Collector CutOff Region
VBE, BASEEMITTER VOLTAGE (VOLTS)
102
101
100
101
, COLLECT
OR
CURRENT
(
A
)
I C 10 2
10 3
0.3 0.2 0.1
0
+ 0.1 + 0.2 + 0.3
+ 0.4 + 0.5
+ 0.6
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
ICES
107
Figure 13. Effects of BaseEmitter Resistance
TJ, JUNCTION TEMPERATURE (
C)
20
40
60
80
100
120
140
160
106
105
104
103
102
R
BE
, EXTERNAL
BASEEMITTER RESIST
ANCE
(OHMS)
VCE = 30 V
IC = 10 x ICES
IC
ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
0.005
0.3
0.05
1.2
1.0
VBE @ VCE = 2.0 V
+ 1.0
0.5
0.005
IC = 2 x ICES
BD241C BD242B BD242C
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A09
TO220AB
ISSUE Z
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
Q
H
Z
L
V
G
N
A
K
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
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