Semiconductor Components Industries, LLC, 2004
June, 2004 - Rev. 11
Publication Order Number:
BDW42/D
BDW42* - NPN, BDW46,
BDW47* - PNP
Preferred Device
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium-power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
Pb-Free Package is Available**
High DC Current Gain - h
FE
= 2500 (typ) @ I
C
= 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:
V
CEO(sus)
= 80 Vdc (min) - BDW46
100 Vdc (min.) - BDW42/BDW47
Low Collector Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (max) @ I
C
= 5.0 Adc
3.0 Vdc (max) @ I
C
= 10.0 Adc
Monolithic Construction with Built-In Base Emitter Shunt resistors
TO-220AB Compact Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BDW46
BDW42, BDW47
V
CEO
80
100
Vdc
Collector-Base Voltage
BDW46
BDW42, BDW47
V
CB
80
100
Vdc
Emitter-Base Voltage
V
EB
5.0
Vdc
Collector Current
I
C
15
Adc
Base Current
I
B
0.5
Adc
Total Device Dissipation
@ T
C
= 25
C
Derate above 25
C
P
D
85
0.68
W
W/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
-55 to
+150
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Case
R
q
JC
1.47
C/W
**For additional information on our Pb-Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO-220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
15 A DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80-100 V, 85 W
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1
2
3
4
Device
Package
Shipping
ORDERING INFORMATION
BDW42
TO-220AB
50 Units/Rail
BDW46
TO-220AB
50 Units/Rail
BDW47G
50 Units/Rail
BDW47
TO-220AB
(Pb-Free)
50 Units/Rail
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
TO-220AB
*Preferred devices are ON Semiconductor recommended
choices for future use and best overall value
BDWxx
YYWW
xx
= 42, 46 or 47
YY = Year
WW = Work Week
BDW42* - NPN, BDW46, BDW47* - PNP
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2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
BDW46
BDW42/BDW47
V
CEO(sus)
80
100
-
-
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
BDW46
(V
CE
= 50 Vdc, I
B
= 0)
BDW42/BDW47
I
CEO
-
-
2.0
2.0
mAdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
BDW46
(V
CB
= 100 Vdc, I
E
= 0)
BDW42/BDW47
I
CBO
-
-
1.0
1.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
-
2.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
h
FE
1000
250
-
-
Collector-Emitter Saturation Voltage
(I
C
= 5.0 Adc, I
B
= 10 mAdc)
(I
C
= 10 Adc, I
B
= 50 mAdc)
V
CE(sat)
-
-
2.0
3.0
Vdc
Base-Emitter On Voltage
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
-
3.0
Vdc
SECOND BREAKDOWN (Note 2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42
V
CE
= 28.4 Vdc
V
CE
= 40 Vdc
BDW46/BDW47
V
CE
= 22.5 Vdc
V
CE
= 36 Vdc
I
S/b
3.0
1.2
3.8
1.2
-
-
-
-
Adc
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
f
T
4.0
-
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
BDW42
BDW46/BDW47
C
ob
-
-
200
300
pF
Small-Signal Current Gain
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
h
fe
300
-
1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
90
60
40
20
0
25
50
75
100
125
150
Figure 1. Power Temperature Derating Curve
T
C
, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
80
70
50
30
10
BDW42* - NPN, BDW46, BDW47* - PNP
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3
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME
(s)
3.0
0.7
0.5
0.3
0.2
0.05
0.2
0.3
0.7
3.0
10
t
d
@ V
BE(off)
= 0 V
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
C
t
f
0.07
1.0
5.0
t
s
t
r
0.1
1.0
2.0
0.5
2.0
7.0
0
V
CC
- 30 V
SCOPE
TUT
+ 4.0 V
t
r
, t
f
v 10 ns
DUTY CYCLE = 1.0%
R
C
D
1
MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE I
B
[ 100 mA
MSD6100 USED BELOW I
B
[ 100 mA
25
s
D
1
51
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
2
APPROX
+ 8.0 V
V
1
APPROX
- 12 V
[ 8.0 k
[ 150
for t
d
and t
r
, D
1
id disconnected
and V
2
= 0
For NPN test circuit reverse all polarities
R
B
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
JC
(t) = r(t) R
JC
R
JC
= 1.92
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.03
0.3
3.0
30
300
BDW42* - NPN, BDW46, BDW47* - PNP
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4
ACTIVE-REGION SAFE OPERATING AREA
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ T
C
= 25
C (SINGLE PULSE)
50
1.0
Figure 5. BDW42
20
2.0
0.05
10
20
100
T
J
= 25
C
BDW42
1.0 ms
0.1 ms
0.2
5.0
0.5
I C
, COLLECT
OR CURRENT
(AMP)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
30
70
1.0
0.1
0.5 ms
dc
2.0
50
3.0
5.0
7.0
Figure 6. BDW46 and BDW47
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ T
C
= 25
C (SINGLE PULSE)
50
1.0
20
2.0
0.05
10
20
100
T
J
= 25
C
BDW46
BDW47
1.0 ms
0.1 ms
0.2
5.0
0.5
I C
, COLLECT
OR CURRENT
(AMP)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
30
70
1.0
0.1
0.5 ms
dc
2.0
50
3.0
5.0
7.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
- V
CE
limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
T
J(pk)
= 200
_C; T
C
is variable depending on conditions.
Second breakdown pulse limits are valid for duty cycles to
10% provided T
J(pk)
v 200_C. T
J(pk)
may be calculated from
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
*Linear extrapolation
10,000
1.0
Figure 7. Small-Signal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0
10
20
50
100
200
1000
500
300
100
5000
h
FE
, SMALL-SIGNAL
CURRENT
GAIN
20
3000
200
500
2000
1000
30
50
BDW46, 47 (PNP)
BDW42 (NPN)
T
J
= 25
C
V
CE
= 3.0 V
I
C
= 3.0 A
300
0.1
Figure 8. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
5.0
20
100
10
C, CAP
ACIT
ANCE (pF)
200
100
70
50
T
J
= + 25
C
C
ib
C
ob
50
0.2
0.5
BDW46, 47 (PNP)
BDW42 (NPN)
BDW42* - NPN, BDW46, BDW47* - PNP
http://onsemi.com
5
0.1
Figure 9. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.2
0.3
0.5 0.7
1.0
2.0
10
500
300
h
FE
, DC CURRENT
GAIN
T
J
= 150
C
25
C
-55
C
V
CE
= 3.0 V
200
7.0
BDW42 (NPN)
BDW46, 47 (PNP)
20,000
5000
10,000
3000
2000
1000
3.0
5.0
0.1
I
C
, COLLECTOR CURRENT (AMP)
0.2
0.3
0.5 0.7
1.0
2.0
10
500
300
h
FE
, DC CURRENT
GAIN
T
J
= 150
C
25
C
-55
C
V
CE
= 3.0 V
200
7.0
20,000
5000
10,000
3000
2000
1000
3.0
5.0
7000
700
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
Figure 10. Collector Saturation Region
3.0
I
B
, BASE CURRENT (mA)
0.3
0.5
1.0
2.0 3.0
5.0 7.0
30
2.6
2.2
1.8
1.4
I
C
= 2.0 A
T
J
= 25
C
4.0 A
6.0 A
1.0
0.7
20
10
3.0
I
B
, BASE CURRENT (mA)
0.3
0.5
1.0
2.0
3.0
5.0 7.0
30
2.6
2.2
1.8
1.4
I
C
= 2.0 A
T
J
= 25
C
4.0 A
6.0 A
1.0
0.7
20
10
I
C
, COLLECTOR CURRENT (AMP)
V
BE(sat)
@ I
C
/I
B
= 250
V
,
VOL
T
AGE (VOL
TS)
Figure 11. "On" Voltages
I
C
, COLLECTOR CURRENT (AMP)
V
,
VOL
T
AGE (VOL
TS)
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
T
J
= 25
C
V
BE
@ V
CE
= 4.0 V
V
BE
@ V
CE
= 4.0 V
V
CE(sat)
@ I
C
/I
B
= 250
T
J
= 25
C
0.1
0.2 0.3
0.5 0.7
1.0
2.0
10
7.0
3.0
5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0
10
7.0
3.0
5.0
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
BDW42* - NPN, BDW46, BDW47* - PNP
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6
V
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
+5.0
Figure 12. Temperature Coefficients
I
C
, COLLECTOR CURRENT (AMP)
0.1
0.2 0.3
1.0
2.0 3.0
5.0
7.0
10
-55
C to 25
C
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
VB
for V
BE
*
VC
for V
CE(sat)
-55
C to 25
C
25
C to 150
C
25
C to 150
C
*I
C
/I
B
v 250
0.5 0.7
+5.0
I
C
, COLLECTOR CURRENT (AMP)
0.1
0.2 0.3
1.0
2.0 3.0
5.0
10
-55
C to +25
C
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
VB
for V
BE
*
VC
for V
CE(sat)
-55
C to + 25
C
+ 25
C to 150
C
+ 25
C to 150
C
*I
C
/I
B
v 250
0.5
+2.0
+2.0
BDW42 (NPN)
BDW46, 47 (PNP)
10
5
Figure 13. Collector Cut-Off Region
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
2
10
1
10
0
, COLLECT
OR CURRENT
(A)
I C
10
- 1
-0.2 -0.4
0
+0.2
+0.4
+0.6
V
CE
= 30 V
T
J
= 150
C
100
C
25
C
REVERSE
FORWARD
10
3
10
4
-0.6 -0.8
-1.0
-1.2 -1.4
10
5
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
2
10
1
10
0
, COLLECT
OR CURRENT
(A)
I C
10
- 1
+0.2 +0.4
0
-0.2
-0.4
-0.6
V
CE
= 30 V
REVERSE
FORWARD
10
3
10
4
+0.6
+0.8
+1.0 +1.2 + 1.4
T
J
= 150
C
100
C
25
C
Figure 14. Darlington Schematic
NPN
BDW42
PNP
BDW46
BDW47
BASE
COLLECTOR
EMITTER
[ 8.0 k
[ 60
BASE
COLLECTOR
EMITTER
[ 8.0 k
[ 60
BDW42* - NPN, BDW46, BDW47* - PNP
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7
PACKAGE DIMENSIONS
TO-220AB
CASE 221A-09
ISSUE AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
-T-
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
BDW42* - NPN, BDW46, BDW47* - PNP
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8
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BDW42/D
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