Semiconductor Components Industries, LLC, 2004
June, 2004 - Rev. 3
1
Publication Order Number:
BSS138LT1/D
BSS138LT1
Preferred Device
Power MOSFET
200 mA, 50 V
N-Channel SOT-23
Typical applications are DC-DC converters, power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
Pb-Free Packages are Available
Low Threshold Voltage (V
GS(th)
: 0.5 V-1.5 V) Makes it Ideal for
Low Voltage Applications
Miniature SOT-23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
50
Vdc
Gate-to-Source Voltage - Continuous
V
GS
20
Vdc
Drain Current
- Continuous @ T
A
= 25
C
- Pulsed Drain Current (t
p
10
m
s)
I
D
I
DM
200
800
mA
Total Power Dissipation @ T
A
= 25
C
P
D
225
mW
Operating and Storage Temperature
Range
T
J
, T
stg
- 55 to
150
C
Thermal Resistance - Junction-to-Ambient
R
q
JA
556
C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T
L
260
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
BSS138LT1
SOT-23
3000 Tape & Reel
N-Channel
SOT-23
CASE 318
STYLE 21
J1M
J1
= Device Code
M
= Date Code
MARKING DIAGRAM & PIN ASSIGNMENT
3
2
1
Drain
Gate
2
1
3
Source
BSS138LT3
SOT-23
10,000 Tape & Reel
200 mA, 50 V
R
DS(on)
= 3.5
W
Preferred devices are recommended choices for future use
and best overall value.
BSS138LT1G
SOT-23
(Pb-Free)
3000 Tape & Reel
BSS138LT3G
SOT-23
(Pb-Free)
10,000 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
BSS138LT1
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
m
Adc)
V
(BR)DSS
50
-
-
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
I
DSS
-
-
-
-
0.1
0.5
m
Adc
Gate-Source Leakage Current (V
GS
=
20 Vdc, V
DS
= 0 Vdc)
I
GSS
-
-
0.1
m
Adc
ON CHARACTERISTICS (Note 1)
Gate-Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.5
-
1.5
Vdc
Static Drain-to-Source On-Resistance
(V
GS
= 2.75 Vdc, I
D
< 200 mAdc, T
A
= -40
C to +85
C)
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
r
DS(on)
-
-
5.6
-
10
3.5
Ohms
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
g
fs
100
-
-
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
-
40
50
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
-
12
25
Transfer Capacitance
(V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
-
3.5
5.0
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
(V
= 30 Vdc I = 0 2 Adc )
t
d(on)
-
-
20
ns
Turn-Off Delay Time
(V
DD
= 30
Vdc, I
D
= 0.2 Adc,)
t
d(off)
-
-
20
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2%.
2. Switching characteristics are independent of operating junction temperature.
BSS138LT1
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3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
(NORMALIZED)
Figure 1. On-Region Characteristics
1
T
J
, JUNCTION TEMPERATURE (
C)
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation with
Temperature
V
GS
= 10 V
I
D
= 0.8 A
-55
-5
45
95
145
0.6
0.8
V GS
, GA
TE-T
O-SOURCE VOL
T
AGE (VOL
TS)
0
4
0
Q
T
, TOTAL GATE CHARGE (pC)
8
500
V
DS
= 40 V
T
J
= 25
C
1000
I
D
= 200 mA
1500
1.2
2
1.4
1.6
1.8
V
GS
= 4.5 V
I
D
= 0.5 A
2000
10
2
6
V gs(th)
, V
ARIANCE (VOL
TS)
1
T
J
, JUNCTION TEMPERATURE (
C)
I
D
= 1.0 mA
-55
-5
45
95
145
0.75
0.875
1.125
1.25
0
0.3
0.4
0.1
0.6
0.2
Figure 4. Threshold Voltage Variation
with Temperature
1
1.5
2
2.5
3
I D
, DRAIN CURRENT
(AMPS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Gate Charge
V
DS
= 10 V
150
C
25
C
- 55
C
3.5
0.5
4
0
2
4
10
0
0.3
0.4
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I D
, DRAIN CURRENT
(AMPS)
6
0.1
8
0.6
0.2
0.5
1
3
9
5
7
V
GS
= 3.25 V
V
GS
= 2.75 V
V
GS
= 2.5 V
V
GS
= 3.0 V
V
GS
= 3.5 V
0.7
0.8
T
J
= 25
C
0.7
0.8
0.9
4.5
0.5
0
2.2
-30
20
70
120
2500
3000
BSS138LT1
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4
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
Figure 6. On-Resistance versus Drain Current
0
0.1
0.2
2
5
6
Figure 7. On-Resistance versus Drain Current
I
D
, DRAIN CURRENT (AMPS)
Figure 8. On-Resistance versus Drain Current
0.001
0.1
1
Figure 9. On-Resistance versus Drain Current
V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
I D
, DIODE CURRENT
(AMPS)
25
C
V
GS
= 2.5 V
T
J
= 150
C
4
0
0.2
0.4
0.6
3
0.01
-55
C
25
C
0.8
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
0
0.1
0.2
1
7
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 2.75 V
5
3
0
120
40
0
80
5
10
C
iss
15
0.05
0.15
0.25
150
C
-55
C
6
8
4
2
0.05
0.15
0.25
20
1.0
1.2
150
C
25
C
-55
C
8
9
7
100
20
60
Figure 11. Capacitance
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
0
0.2
0.4
0.05
1
2.5
3
I
D
, DRAIN CURRENT (AMPS)
25
C
V
GS
= 4.5 V
2
1.5
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
0
0.2
0.4
0.05
1
4
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
3
2
0.1
0.3
0.5
150
C
-55
C
3.5
4.5
2.5
1.5
0.1
0.3
0.5
150
C
25
C
-55
C
4
4.5
3.5
10
1
0.25
0.45
0.15
0.35
5
5.5
6
0.25
0.45
0.15
0.35
25
C
oss
C
rss
BSS138LT1
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5
PACKAGE DIMENSIONS
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOT-23 (TO-236)
CASE 318-08
ISSUE AH
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102 0.1197
2.80
3.04
INCHES
B 0.0472 0.0551
1.20
1.40
C 0.0350 0.0440
0.89
1.11
D 0.0150 0.0200
0.37
0.50
G 0.0701 0.0807
1.78
2.04
H 0.0005 0.0040
0.013
0.100
J 0.0034 0.0070
0.085
0.177
K 0.0140 0.0285
0.35
0.69
L 0.0350 0.0401
0.89
1.02
S 0.0830 0.1039
2.10
2.64
V 0.0177 0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318-03 AND -07 OBSOLETE, NEW STANDARD
318-08.
BSS138LT1
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6
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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BSS138LT1/D
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