1
Motorola Bipolar Power Transistor Device Data
Designer's
TM
Data Sheet
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH50 has an application specific stateofart die designed for use in
50 Watts HALOGEN electronic transformers and switchmode applications.
This high voltage/high speed transistor exhibits the following main feature:
Improved Efficiency Due to Low Base Drive Requirements:
-- High and Flat DC Current Gain hFE
-- Fast Switching
Motorola "6SIGMA" Philosophy Provides Tight and Reproductible
Parametric Distributions
Specified Dynamic Saturation Data
Full Characterization at 125
C
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Sustaining Voltage
VCEO
500
Vdc
CollectorBase Breakdown Voltage
VCBO
800
Vdc
CollectorEmitter Breakdown Voltage
VCES
800
Vdc
EmitterBase Voltage
VEBO
9
Vdc
Collector Current -- Continuous
-- Peak (1)
IC
ICM
4
8
Adc
Base Current -- Continuous
Base Current
-- Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25
_
C
*Derate above 25
C
PD
50
0.4
Watt
W/
_
C
Operating and Storage Temperature
TJ, Tstg
65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
-- Junction to Case
-- Junction to Ambient
R
JC
R
JA
2.5
62.5
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
from case for 5 seconds
TL
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUH50/D
Motorola, Inc. 1995
BUH50
POWER TRANSISTOR
4 AMPERES
800 VOLTS
50 WATTS
CASE 221A06
TO220AB
BUH50
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
500
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
Adc
Collector Cutoff Current
@ TC = 25
C
(VCE = Rated VCES, VEB = 0)
@ TC = 125
C
ICES
100
1000
Adc
EmitterCutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
100
Adc
ON CHARACTERISTICS
BaseEmitter Saturation Voltage
(IC = 1 Adc, IB = 0.33 Adc)
(IC = 2 Adc, IB = 0.66 Adc) 25
C
(IC = 2 Adc, IB = 0.66 Adc) 100
C
VBE(sat)
0.86
0.94
0.85
1.2
1.6
1.5
Vdc
CollectorEmitter Saturation Voltage
(IC = 1 Adc, IB = 0.33 Adc)
@ TC = 25
C
VCE(sat)
0.2
0.5
Vdc
(IC = 2 Adc, IB = 0.66 Adc)
@ TC = 25
C
@ TC = 125
C
0.32
0.29
0.6
0.7
(IC = 3 Adc, IB = 1 Adc)
@ TC = 25
C
0.5
1
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
@ TC = 25
C
hFE
7
13
--
DC Current Gain
(IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25
C
5
10
--
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
4
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
50
100
pF
Input Capacitance
(VEB = 8 Vdc)
Cib
850
1200
pF
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1
s and
3
s respectively after
rising IB1 reaches
90% of final IB1
IC = 1 A
IB1 = 0.33 A
VCC = 300 V
@ 1
s
@ TC = 25
C
@ TC = 125
C
VCE(dsat)
1.75
5
V
Dynamic Saturation
Voltage:
Determined 1
s and
3
s respectively after
rising IB1 reaches
90% of final IB1
IB1 = 0.33 A
VCC = 300 V
@ 3
s
@ TC = 25
C
@ TC = 125
C
0.3
0.5
V
s and
3
s respectively after
rising IB1 reaches
90% of final IB1
IC = 2 A
IB1 = 0.66 A
VCC = 300 V
@ 1
s
@ TC = 25
C
@ TC = 125
C
6
14
V
90% of final IB1
IB1 = 0.66 A
VCC = 300 V
@ 3
s
@ TC = 25
C
@ TC = 125
C
0.75
4
V
BUH50
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
10%, Pulse Width = 20
s)
Turnon Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc
VCC = 125 Vdc
@ TC = 25
C
ton
95
250
ns
Turnoff Time
IB2 = 0.4 Adc
VCC = 125 Vdc
@ TC = 25
C
toff
2.5
3.5
s
Turnon Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
VCC = 125 Vdc
@ TC = 25
C
ton
110
250
ns
Turnoff Time
IB2 = 1 Adc
VCC = 125 Vdc
@ TC = 25
C
toff
0.95
2
s
Turnon Time
IC = 1 Adc, IB1 = 0.3 Adc
IB2 = 0.3 Adc
VCC = 125 Vdc
@ TC = 25
C
ton
100
200
ns
Turnoff Time
IB2 = 0.3 Adc
VCC = 125 Vdc
@ TC = 25
C
toff
2.9
3.5
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200
H)
Fall Time
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 1 Adc
@ TC = 25
C
@ TC = 125
C
tf
80
95
150
ns
Storage Time
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 1 Adc
@ TC = 25
C
@ TC = 125
C
ts
1.2
1.7
2.5
s
Crossover Time
IB2 = 1 Adc
@ TC = 25
C
@ TC = 125
C
tc
150
180
300
ns
Fall Time
IC = 2 Adc
IB1 = 0.66 Adc
IB2 = 1 Adc
@ TC = 25
C
@ TC = 125
C
tf
90
100
150
ns
Storage Time
IC = 2 Adc
IB1 = 0.66 Adc
IB2 = 1 Adc
@ TC = 25
C
@ TC = 125
C
ts
1.7
2.5
2.75
s
Crossover Time
IB2 = 1 Adc
@ TC = 25
C
@ TC = 125
C
tc
190
220
350
ns
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
10
1
10
1
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
TJ = 125
C
TJ = 25
C
TJ = 40
C
VCE = 1 V
Figure 2. DC Current Gain @ 5 Volt
100
10
1
10
1
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
TJ = 125
C
TJ = 25
C
TJ = 40
C
VCE = 5 V
BUH50
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 3. Collector Saturation Region
10
1
0.1
10
1
0.1
0.01
IB, BASE CURRENT (mA)
IC = 500 mA
Figure 4. CollectorEmitter Saturation Voltage
10
1
0.01
10
1
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
C
TJ = 25
C
TJ = 40
C
IC/IB = 3
V
CE
, VOL
T
AGE (VOL
TS)
V
CE
, VOL
T
AGE (VOL
TS)
TJ = 25
C
2 A
4 A
Figure 5. CollectorEmitter Saturation Voltage
10
1
0.01
10
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
Figure 6. BaseEmitter Saturation Region
10
1
0.1
10
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
C
TJ = 25
C
TJ = 40
C
V
CE
, VOL
T
AGE (VOL
TS)
V
BE
, VOL
T
AGE (VOL
TS)
1
TJ = 125
C
TJ = 25
C
TJ = 40
C
3 A
1 A
0.1
0.1
IC/IB = 5
1
IC/IB = 3
Figure 7. BaseEmitter Saturation Region
10
1
0.1
10
1
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
V
BE
, VOL
T
AGE (VOL
TS)
TJ = 125
C
TJ = 25
C
TJ = 40
C
Figure 8. Capacitance
10000
10
1
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
100
Cib (pF)
Cob (pF)
TJ = 25
C
f(test) = 1 MHz
IC/IB = 5
1000
BUH50
5
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
Figure 9. Resistive Switching, ton
3000
1000
0
5
2
1
IC, COLLECTOR CURRENT (AMPS)
4
t,
TIME (ns)
2000
1500
500
TJ = 125
C
TJ = 25
C
IC/IB = 3
IBoff = IC/2
VCC = 125 V
PW = 20
s
Figure 10. Resistive Switch Time, toff
4000
0
5
4
1
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Storage Time, tsi
4000
2000
0
4
2
1
IC, COLLECTOR CURRENT (AMPS)
3000
1000
3000
2000
1000
TJ = 125
C
TJ = 25
C
IC/IB = 3
3
TJ = 125
C
TJ = 25
C
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
Figure 12. Inductive Storage Time,
tc & tfi @ IC/IB = 3
300
0
4
3
1
IC, COLLECTOR CURRENT (AMPS)
t,
TIME (ns)
200
100
2
TJ = 125
C
TJ = 25
C
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
tc
tfi
2500
3
IC/IB = 5
t,
TIME (ns)
t,
TIME (ns)
IC/IB = 3
IC/IB = 5
TYPICAL CHARACTERISTICS
Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5
4000
2000
0
10
5
3
hFE, FORCED GAIN
9
3000
1000
7
, ST
ORAGE
TIME (
t si
s)
IC = 1 A
TJ = 125
C
TJ = 25
C
Figure 14. Inductive Storage Time
250
0
4
3
1
IC, COLLECTOR CURRENT (AMPS)
t,
TIME (ns)
100
50
2
TJ = 125
C
TJ = 25
C
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
tc
tfi
200
150
4
6
8
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
IC = 2 A
IBoff = IC/2
VCC = 125 V
PW = 20
s
2
3
IC/IB = 5
BUH50
6
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
Figure 15. Inductive Fall Time
150
50
10
2
hFE, FORCED GAIN
Figure 16. Inductive Crossover Time
350
150
50
11
5
3
hFE, FORCED GAIN
9
250
130
t fi
, F
ALL
TIME (ns)
t c
, CROSSOVER
TIME (ns)
140
110
90
70
60
4
6
8
TJ = 125
C
TJ = 25
C
IC = 1 A
7
TJ = 125
C
TJ = 25
C
120
100
80
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
IC = 2 A
IC = 1 A
IC = 2 A
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
Figure 17. Forward Power Derating
1
0
160
100
20
TC, CASE TEMPERATURE (
C)
0.8
POWER DERA
TING F
ACT
OR
0.6
0.4
0.2
60
140
SECOND BREAKDOWN
DERATING
40
80
120
THERMAL DERATING
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 20 is based
on TC = 25
C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25
C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 20 may be found at any case temperature by using
the appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figure 22. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turnoff with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating
area (Figure 21). This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
BUH50
7
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
Figure 18. Dynamic Saturation Voltage
TIME
Figure 19. Inductive Switching Measurements
VCE
0 V
IB
90% IB
1
s
3
s
dyn 1
s
dyn 3
s
Figure 20. Forward Bias Safe Operating Area
10
0.01
1000
10
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 21. Reverse Bias Safe Operating Area
5
2
0
900
300
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
4
100
600
1
0.1
I C
, COLLECT
OR CURRENT
(AMPS)
I C
, COLLECT
OR CURRENT
(AMPS)
DC
5 ms
1 ms
10
s
1
s
3
1
GAIN
3
0 V
1.5 V
5 V
TC
125
C
LC = 500
H
10
4
0
8
2
0
TIME
6
8
6
2
4
9
7
5
3
1
1
3
5
7
IB
IC
Vclamp
tc
tfi
90% IC
10% IC
90% IB1
10% Vclamp
tsi
EXTENDED
SOA
BUH50
8
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
V(BR)CEO(sus)
L = 10 mH
RB2 =
VCC = 20 Volts
IC(pk) = 100 mA
Inductive Switching
L = 200
H
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500
H
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
+15 V
1
F
150
3 W
100
3 W
MPF930
+10 V
50
COMMON
Voff
500
F
MPF930
MTP8P10
MUR105
MJE210
MTP12N10
MTP8P10
150
3 W
100
F
Iout
A
RB1
RB2
1
F
IC PEAK
VCE PEAK
VCE
IB
IB1
IB2
Figure 22. Typical Thermal Response (Z
JC(t)) for BUH50
1
0.01
10
0.1
0.01
t, TIME (ms)
0.1
1
100
1000
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
R
JC(t) = r(t) R
JC
R
JC = 2.5
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05
SINGLE PULSE
0.5
0.2
0.1
0.02
BUH50
9
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
BUH50
10
Motorola Bipolar Power Transistor Device Data
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