Motorola Bipolar Power Transistor Device Data

Designer's

Data Sheet

NPN Silicon Power Transistor

High Voltage SWITCHMODE

Series

Designed for use in electronic ballast (light ballast) and in Switchmode Power

supplies up to 50 Watts. Main features include:

Improved Efficiency Due to:
-- Low Base Drive Requirements (High and Flat DC Current Gain hFE)
-- Low Power Losses (OnState and Switching Operations)
-- Fast Switching: tfi = 100 ns (typ) and tsi = 3.2

s (typ)

-- Fast Switching:

@ IC = 2.0 A, IB1 = IB2 = 0.4 A

Full Characterization at 125

Tight Parametric Distributions Consistent LottoLot

BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369

MAXIMUM RATINGS

Rating

Symbol

BUL45

BUL45F

Unit

CollectorEmitter Sustaining Voltage

VCEO

400

Vdc

CollectorEmitter Breakdown Voltage

VCES

700

Vdc

EmitterBase Voltage

VEBO

9.0

Vdc

Collector Current -- Continuous

-- Peak(1)

ICM

5.0

Adc

Base Current

2.0

Adc

RMS Isolated Voltage(2)

Test No. 1 Per Fig. 22a

(for 1 sec, R.H. < 30%,

Test No. 2 Per Fig. 22b

TC = 25

Test No. 3 Per Fig. 22c

VISOL

--
--
--

4500
3500
1500

Volts

Total Device Dissipation

(TC = 25

Derate above 25

0.6

0.28

Watts

Operating and Storage Temperature

TJ, Tstg

65 to 150

THERMAL CHARACTERISTICS

Rating

Symbol

MJE18006 MJF18006

Unit

Thermal Resistance -- Junction to Case

-- Junction to Ambient

1.65
62.5

3.55
62.5

C/W

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

VCEO(sus)

400

Vdc

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

ICEO

100

Adc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

(TC = 125

ICES

--
--

100

Adc

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)

IEBO

100

Adc

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUL45/D

Motorola, Inc. 1995

BUL45

BUL45F

POWER TRANSISTOR

5.0 AMPERES

700 VOLTS

35 and 75 WATTS

*Motorola Preferred Device

BUL45

CASE 221A06

TO220AB

BUL45F

CASE 221D02

ISOLATED TO220 TYPE

UL RECOGNIZED

REV 2

BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS -- continued

(TC = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

BaseEmitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc)

(IC = 2.0 Adc, IB = 0.4 Adc)

VBE(sat)

--
--

0.84
0.89

1.2

1.25

Vdc

CollectorEmitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

(TC = 125

VCE(sat)

--
--

0.175
0.150

0.25

Vdc

CollectorEmitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.4 Adc)

(TC = 125

VCE(sat)

--
--

0.25

0.275

0.4

Vdc

DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc)

(TC = 125

DC Current Gain

(IC = 2.0 Adc, VCE = 1.0 Vdc)

(TC = 125

DC Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

7.0
5.0

32
14
12
22

--
--
--
--

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

Input Capacitance (VEB = 8.0 Vdc)

Cib

920

1200

Dynamic Saturation Voltage:

Determined 1.0

s and

3.0

s respectively after

rising IB1 reaches 90%
of final IB1
(see Figure 18)

(IC = 1.0 Adc

IB1 = 100 mAdc

VCC = 300 V)

1.0

(TC = 125

VCE

(Dyn sat)

--
--

1.75

4.4

--
--

Vdc

Determined 1.0

s and

3.0

s respectively after

rising IB1 reaches 90%
of final IB1
(see Figure 18)

IB1 = 100 mAdc

VCC = 300 V)

3.0

(TC = 125

VCE

(Dyn sat)

--
--

0.5
1.0

--
--

Vdc

rising IB1 reaches 90%
of final IB1
(see Figure 18)

(IC = 2.0 Adc

IB1 = 400 mAdc

VCC = 300 V)

1.0

(TC = 125

VCE

(Dyn sat)

--
--

1.85

6.0

--
--

Vdc

IB1 = 400 mAdc

VCC = 300 V)

3.0

(TC = 125

--
--

0.5
1.0

--
--

SWITCHING CHARACTERISTICS: Resistive Load

TurnOn Time

(IC = 2.0 Adc, IB1 = IB2 = 0.4 Adc
Pulse Width = 20

(TC = 125

Duty Cycle < 20%
VCC = 300 V)

(TC = 125

ton

--
--

120

110

TurnOff Time

Duty Cycle < 20%
VCC = 300 V)

(TC = 125

toff

--
--

2.8
3.5

3.5

SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200

H, Vclamp = 300 Vdc)

Fall Time

(IC = 2.0 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc)

(TC = 125

tfi

200

170

Storage Time

(TC = 125

tsi

2.6

4.2

3.8

Crossover Time

(TC = 125

--
--

230
400

350

Fall Time

(IC = 1.0 Adc, IB1 = 100 mAdc
IB2 = 0.5 Adc)

(TC = 125

tfi

--
--

110

100

150

Storage Time

(TC = 125

tsi

--
--

1.1
1.5

1.7

Crossover Time

(TC = 125

--
--

170
170

250

Fall Time

(IC = 2.0 Adc, IB1 = 250 mAdc
IB2 = 2.0 Adc)

(TC = 125

tfi

120

Storage Time

(TC = 125

tsi

0.6

0.9

Crossover Time

(TC = 125

175

300

BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

0.01

100

IC, COLLECTOR CURRENT (AMPS)

1.00

10.00

100

0.01

0.10

1.00

10.00

2.0

0.01

IB, BASE CURRENT (AMPS)

1.0

0.01

IC, COLLECTOR CURRENT (AMPS)

0.10

1.0

0.8

0.4

0.01

IC, COLLECTOR CURRENT (AMPS)

0.10

1.00

10.00

1000

100

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

1000

1.0

0.1

1.00

10.00

10000

0.10

1.00

10.00

1.1

0.9

0.6

0.5

1.5

100

0.7

TYPICAL STATIC CHARACTERISTICS

C, CAP

ACIT

ANCE (pF)

, DC CURRENT

GAIN

, DC CURRENT

GAIN

, VOL

T
AGE (VOL

TS)

, VOL

T
AGE (VOL

TS)

, VOL

T
AGE (VOL

TS)

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain at @ 5 Volts

Figure 3. CollectorEmitter Saturation Region

Figure 4. CollectorEmitter Saturation Voltage

Figure 5. BaseEmitter Saturation Region

Figure 6. Capacitance

VCE = 1 V

TJ = 125

TJ = 25

TJ = 20

VCE = 5 V

TJ = 25

TJ = 125

TJ = 20

TJ = 25

IC = 0.5 A

1.5

1 A

2 A

3 A

4 A

5 A

6 A

IC/IB = 10

IC/IB = 5

IC/IB = 10
IC/IB = 5

TJ = 25

TJ = 125

Cib

Cob

TJ = 25

f = 1 MHz

TJ = 25

TJ = 125

BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

TIME (ns)

1000

2000

3500

hFE, FORCED GAIN

IC, COLLECTOR CURRENT (AMPS)

150

2000

200

100

t si

, ST

ORAGE

TIME (ns)

200

150

100

400

500

1000

1500

2500

3000

TIME (ns)

1000

1500

2500

TIME (ns)

500

3000

250

300

1200

200

600

800

3500

2000

1000

1500

2500

500

3000

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

Figure 7. Resistive Switching, ton

Figure 8. Resistive Switching, toff

Figure 9. Inductive Storage Time, tsi

Figure 10. Inductive Storage Time, tsi(hFE)

Figure 11. Inductive Switching, tc & tfi, IC/IB = 5

Figure 12. Inductive Switching, tc & tfi, IC/IB = 10

IC/IB = 10

IC/IB = 5

IC/IB = 10

IB(off) = IC/2
VCC = 300 V
PW = 20

TJ = 25

TJ = 125

IB(off) = IC/2
VCC = 300 V
PW = 20

TJ = 25

TJ = 125

IC = 1 A

VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200

IC/IB = 5

IC/IB = 10

TJ = 25

TJ = 125

IC = 2 A

TJ = 25

TJ = 125

IB(off) = IC/2
LC = 200

VZ = 300 V
VCC = 15 V

VCC = 15 V
IB(off) = IC/2
LC = 200

VZ = 300 V

TJ = 25

TJ = 125

tfi

TJ = 25

TJ = 125

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200

BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

1.0

0.8

0.2

140

160

0.6

0.4

100

120

I C

, COLLECT

OR CURRENT

(AMPS)

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

hFE, FORCED GAIN

t c

, CROSSOVER

TIME (ns)

150

hFE, FORCED GAIN

t fi

, F

ALL

TIME (ns)

I C

, COLLECT

OR CURRENT

(AMPS)

200

100

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

300

400

TC, CASE TEMPERATURE (

1.0

0.01

600

800

100

1000

POWER DERA

TING F

ACT

100

130

300

100

0.1

500

110

120

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 15 is based on TC
= 25

C; TJ(pk) is variable depending on power level. Second

breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC

C. Second breakdown limita-

tions do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Fig-
ure 17. TJ(pk) may be calculated from the data in Figures 20
and 21. At any case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turnoff with the basetoemitter junction re-
versebiased. The safe level is specified as a reversebiased
safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode.

150

250

700

140

GUARANTEED SAFE OPERATING AREA INFORMATION

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

Figure 13. Inductive Fall Time, tfi(hFE)

Figure 14. Crossover Time

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe Operating Area

Figure 17. Forward Bias Power Derating

IC = 1 A

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200

TJ = 25

TJ = 125

IC = 2 A

VCC = 15 V
VZ = 300 V
IB(off) = IC/2
LC = 200

IC = 1 A

IC = 2 A

TJ = 25

TJ = 125

1 ms

5 ms

EXTENDED

SOA

DC (BUL45)

DC (BUL45F)

125

IC/IB

LC = 500

5 V

SECOND BREAKDOWN

DERATING

THERMAL DERATING

1.5 V

VBE(off) = 0 V

BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

TIME

VCE

VOL

90% IB

dyn 1

dyn 3

TIME

tsi

VCLAMP

10% VCLAMP

90% IB1

10% IC

90% IC

tfi

Table 1. Inductive Load Switching Drive Circuit

+15 V

150

3 W

100

3 W

MPF930

+10 V

COMMON

Voff

500

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150

3 W

100

Iout

IC PEAK

VCE PEAK

VCE

IB1

IB2

V(BR)CEO(sus)
L = 10

RB2 =

VCC = 20 VOLTS
IC(pk) = 100 mA

INDUCTIVE SWITCHING
L = 200

RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1

RBSOA
L = 500

RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1

RB2

RB1

Figure 18. Dynamic Saturation Voltage Measurements

Figure 19. Inductive Switching Measurements

BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

0.01

0.2

0.02

D = 0.5

SINGLE PULSE

0.01

0.10

1.00

10.00

100.00

1000.00

0.10

1.00

0.01

t, TIME (ms)

0.2

0.1

0.01

0.10

1.00

10.00

100.00

100000.00

0.10

1.00

1000.00

10000.00

0.05

0.02

0.05

D = 0.5

0.1

SINGLE PULSE

r(t)

TRANSIENT

THERMAL

RESIST

ANCE (NORMALIZED)

r(t)

TRANSIENT

THERMAL

RESIST

ANCE (NORMALIZED)

JC(t) = r(t) R

JC = 2.5

C/W MAX

D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) TC = P(pk) R

JC(t)

DUTY CYCLE, D = t1/t2

t1
t2

P(pk)

JC(t) = r(t) R

JC = 5.0

C/W MAX

D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) TC = P(pk) R

JC(t)

DUTY CYCLE, D = t1/t2

t1
t2

P(pk)

TYPICAL THERMAL RESPONSE

t, TIME (ms)

Figure 20. Typical Thermal Response (Z

JC(t)) for BUL45

Figure 21. Typical Thermal Response (Z

JC(t)) for BUL45F

BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

The BUL45/BUL45F Bipolar Power Transistors were

specially designed for use in electronic lamp ballasts. A
circuit designed by Motorola applications was built to

demonstrate how well these devices operate. The circuit and
detailed component list are provided below.

5.5 mH

10 nF

1000 V

0.1

400 V

TUBE

1000 V

MUR150

T1B

T1A

MUR150

1N4007

1N5761

100 V

0.1

470 k

385 V

D10

AC LINE

220 V

CTN

FUSE

0.1

400 V

COLLECTOR CURRENT SENSE
(USE EXTERNAL STRAPS)

Components Lists

Q1 =

Q2 = BUL45 Transistor

D1 =

1N4007 Rectifier

D2 =

1N5761 Rectifier

D3 =

D4 = MUR150

D5 =

D6 = MUR105

D7 =

D8 = D9 = D10 = 1N400

CTN =

@ 25

L =

RM10 core, A1 = 400, B51 (LCC) 75 turns,
wire

= 0.6 mm

T1 =

FT10 toroid, T4A (LCC)
Primary: 4 turns
Secondaries: T1A: 4 turns

Secondaries:

T1B: 4 turns

All resistors are 1/4 Watt,

R1 =

470 k

R2 =

R3 = 47

R4 =

R5 = 1

(these resistors are optional, and

might be replaced by a short circuit)

C1 =

F/385 V

C2 =

0.1

C3 =

10 nF/1000 V

C4 =

15 nF/1000 V

C5 =

C6 = 0.1

F/400 V

NOTES:

1. Since this design does not include the line input filter, it cannot be used "asis" in a practical industrial circuit.
2. The windings are given for a 55 Watt load. For proper operation they must be recalculated with any other loads.

Figure 22. Application Example

BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110

MIN

Figure 22a. Screw or Clip Mounting Position

for Isolation Test Number 1

* Measurement made between leads and heatsink with all leads shorted together.

CLIP

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

CLIP

0.107

MIN

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.107

MIN

Figure 22b. Clip Mounting Position

for Isolation Test Number 2

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

MOUNTING INFORMATION**

440 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant
pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess of 20 in . lbs will

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package.

However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs
of mounting torque under any mounting conditions.

Figure 23a. ScrewMounted

Figure 23b. ClipMounted

Figure 23. Typical Mounting Techniques

for Isolated Package

** For more information about mounting power semiconductors see Application Note AN1040.

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

BUL45 BUL45F

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

BUL45

CASE 221A06

TO220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR
3. EMITTER
4. COLLECTOR

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

0.570

0.620

14.48

15.75

0.380

0.405

9.66

10.28

0.160

0.190

4.07

4.82

0.025

0.035

0.64

0.88

0.142

0.147

3.61

3.73

0.095

0.105

2.42

2.66

0.110

0.155

2.80

3.93

0.018

0.025

0.46

0.64

0.500

0.562

12.70

14.27

0.045

0.060

1.15

1.52

0.190

0.210

4.83

5.33

0.100

0.120

2.54

3.04

0.080

0.110

2.04

2.79

0.045

0.055

1.15

1.39

0.235

0.255

5.97

6.47

0.000

0.050

0.00

1.27

0.045

1.15

0.080

2.04

2 3

SEATING
PLANE

T

BUL45F

CASE 221D02

(ISOLATED TO220 TYPE)

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 2:

PIN 1. BASE

2. COLLECTOR
3. EMITTER

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

0.621

0.629

15.78

15.97

INCHES

0.394

0.402

10.01

10.21

0.181

0.189

4.60

4.80

0.026

0.034

0.67

0.86

0.121

0.129

3.08

3.27

0.100 BSC

2.54 BSC

0.123

0.129

3.13

3.27

0.018

0.025

0.46

0.64

0.500

0.562

12.70

14.27

0.045

0.060

1.14

1.52

0.200 BSC

5.08 BSC

0.126

0.134

3.21

3.40

0.107

0.111

2.72

2.81

0.096

0.104

2.44

2.64

0.259

0.267

6.58

6.78

B

Y

G
N

3 PL

1 2 3

0.25 (0.010)

SEATING
PLANE

T

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BUL45/D

*BUL45/D*

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: BUL45F

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: BUL45F