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Электронный компонент: BZX84C36L

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Semiconductor Components Industries, LLC, 2001
September, 2001 Rev. 2
1
Publication Order Number:
BZX84C2V4LT1/D
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features:
225 mW Rating on FR4 or FR5 Board
Zener Breakdown Voltage Range 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL94 V0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Total Power Dissipation on FR5 Board,
(Note 1) @ T
A
= 25
C
Derated above 25
C
P
D
225
1.8
mW
mW/
C
Thermal Resistance Junction to Ambient
R
q
JA
556
C/W
Total Power Dissipation on Alumina
Substrate, (Note 2) @ T
A
= 25
C
Derated above 25
C
P
D
300
2.4
mW
mW/
C
Thermal Resistance Junction to Ambient
R
q
JA
417
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
65 to
+150
C
1. FR5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina
Device
{
Package
Shipping
ORDERING INFORMATION
SOT23
CASE 318
STYLE 8
http://onsemi.com
3
Cathode
1
Anode
BZX84CxxxLT1
SOT23
3000/Tape & Reel
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
xxx = Specific Device Code
M
= Date Code
xxx
The "T1" suffix refers to an 8 mm, 7 inch reel.
The "T3" suffix refers to an 8 mm, 13 inch reel.
M
BZX84CxxxLT3
SOT23
10,000/Tape & Reel
3
1
2
Devices listed in
bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
BZX84C2V4LT1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode)
(T
A
= 25
C
unless otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
Q
V
Z
Maximum Temperature Coefficient of V
Z
C
Max. Capacitance @ V
R
= 0 and f = 1 MHz
BZX84C2V4LT1 Series
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3
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode)
(T
A
= 25
C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
V
Z1
(Volts)
@ I
ZT1
= 5 mA
(Note 3)
Z
ZT1
(Ohms)
V
Z2
(Volts)
@ I
ZT2
= 1 mA
(Note 3)
Z
ZT2
(Ohms)
V
Z3
(Volts)
@ I
ZT3
= 20 mA
(Note 3)
Z
ZT3
(Ohms)
Max Reverse
Leakage
Current
q
VZ
(mV/k)
@ I
ZT1
= 5 mA
C (pF)
Device
Device
Marking
Min
Nom
Max
(Ohms)
@ I
ZT1
=
5 mA
Min
Max
(Ohms)
@ I
ZT2
=
1 mA
Min
Max
(Ohms)
@ I
ZT3
=
20 mA
V
R
Volts
I
R
m
A
@
Min
Max
C (pF)
@ V
R
= 0
f = 1 MHz
BZX84C2V4LT1
Z11
2.2
2.4
2.6
100
1.7
2.1
600
2.6
3.2
50
50
1
3.5
0
450
BZX84C2V7LT1
Z12
2.5
2.7
2.9
100
1.9
2.4
600
3
3.6
50
20
1
3.5
0
450
BZX84C3V0LT1
Z13
2.8
3
3.2
95
2.1
2.7
600
3.3
3.9
50
10
1
3.5
0
450
BZX84C3V3LT1
Z14
3.1
3.3
3.5
95
2.3
2.9
600
3.6
4.2
40
5
1
3.5
0
450
BZX84C3V6LT1
Z15
3.4
3.6
3.8
90
2.7
3.3
600
3.9
4.5
40
5
1
3.5
0
450
BZX84C3V9LT1
Z16
3.7
3.9
4.1
90
2.9
3.5
600
4.1
4.7
30
3
1
3.5
2.5
450
BZX84C4V3LT1
W9
4
4.3
4.6
90
3.3
4
600
4.4
5.1
30
3
1
3.5
0
450
BZX84C4V7LT1
Z1
4.4
4.7
5
80
3.7
4.7
500
4.5
5.4
15
3
2
3.5
0.2
260
BZX84C5V1LT1
Z2
4.8
5.1
5.4
60
4.2
5.3
480
5
5.9
15
2
2
2.7
1.2
225
BZX84C5V6LT1
Z3
5.2
5.6
6
40
4.8
6
400
5.2
6.3
10
1
2
2.0
2.5
200
BZX84C6V2LT1
Z4
5.8
6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
BZX84C6V8LT1
Z5
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
BZX84C7V5LT1
Z6
7
7.5
7.9
15
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
BZX84C8V2LT1
Z7
7.7
8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
BZX84C9V1LT1
Z8
8.5
9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
BZX84C10LT1
Z9
9.4
10
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7
4.5
8.0
130
BZX84C11LT1
Y1
10.4
11
11.6
20
10.2
11.6
150
10.4
11.8
10
0.1
8
5.4
9.0
130
BZX84C12LT1
Y2
11.4
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8
6.0
10.0
130
BZX84C13LT1
Y3
12.4
13
14.1
30
12.3
14
170
12.5
14.2
15
0.1
8
7.0
11.0
120
BZX84C15LT1
Y4
14.3
15
15.8
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13.0
110
BZX84C16LT1
Y5
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14.0
105
BZX84C18LT1
Y6
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16.0
100
BZX84C20LT1
Y7
18.8
20
21.2
55
18.7
21.1
225
18.9
21.4
20
0.05
14
14.4
18.0
85
BZX84C22LT1
Y8
20.8
22
23.3
55
20.7
23.2
250
20.9
23.4
25
0.05
15.4
16.4
20.0
85
BZX84C24LT1
Y9
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22.0
80
V
Z1
Below
@ I
ZT1
= 2 mA
Z
ZT1
Below
V
Z2
Below
@ I
ZT2
= 0.1 mA
Z
ZT2
Below
V
Z3
Below
@ I
ZT3
= 10 mA
Z
ZT3
Below
Max Reverse
Leakage
Current
q
VZ
(mV/k) Below
@ I
ZT1
= 2 mA
C (pF)
Device
Device
Marking
Min
Nom
Max
Below
@ I
ZT1
=
2 mA
Min
Max
Below
@ I
ZT4
=
0.5 mA
Min
Max
Below
@ I
ZT3
=
10 mA
V
R
Volts
I
R
m
A
@
Min
Max
C (pF)
@ V
R
= 0
f = 1 MHz
BZX84C27LT1
Y10
25.1
27
28.9
80
25
28.9
300
25.2
29.3
45
0.05
18.9
21.4
25.3
70
BZX84C30LT1
Y11
28
30
32
80
27.8
32
300
28.1
32.4
50
0.05
21
24.4
29.4
70
BZX84C33LT1
Y12
31
33
35
80
30.8
35
325
31.1
35.4
55
0.05
23.1
27.4
33.4
70
BZX84C36LT1
Y13
34
36
38
90
33.8
38
350
34.1
38.4
60
0.05
25.2
30.4
37.4
70
BZX84C39LT1
Y14
37
39
41
130
36.7
41
350
37.1
41.5
70
0.05
27.3
33.4
41.2
45
BZX84C43LT1
Y15
40
43
46
150
39.7
46
375
40.1
46.5
80
0.05
30.1
37.6
46.6
40
BZX84C47LT1
Y16
44
47
50
170
43.7
50
375
44.1
50.5
90
0.05
32.9
42.0
51.8
40
BZX84C51LT1
Y17
48
51
54
180
47.6
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
BZX84C56LT1
Y18
52
56
60
200
51.5
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
BZX84C62LT1
Y19
58
62
66
215
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
BZX84C68LT1
Y20
64
68
72
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
BZX84C75LT1
Y21
70
75
79
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
3. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25
C
BZX84C2V4LT1 Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
VZ
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
V
Z
, NOMINAL ZENER VOLTAGE (V)
-3
-2
-
1
0
1
2
3
4
5
6
7
8
12
11
10
9
8
7
6
5
4
3
2
Figure 1. Temperature Coefficients
(Temperature Range 55
C to +150
C)
TYPICAL T
C
VALUES
V
Z
@ I
ZT
VZ
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
100
10
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range 55
C to +150
C)
V
Z
@ I
ZT
100
V
Z
, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
10
1
Z ZT
, DYNAMIC IMPEDANCE (
)
1000
100
10
1
T
J
= 25
C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
I
Z
= 1 mA
5 mA
20 mA
V
F
, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I F
, FOR
W
ARD CURRENT
(mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150
C
75
C 25
C
0
C
TYPICAL T
C
VALUES
BZX84C2V4LT1 Series
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5
TYPICAL CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1
10
1
BIAS AT
50% OF V
Z
NOM
T
A
= 25
C
0 V BIAS
1 V BIAS
12
V
Z
, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
10
8
6
4
2
0
T
A
= 25
C
I Z
, ZENER CURRENT
(mA)
V
Z
, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110
30
50
70
90
T
A
= 25
C
I R
, LEAKAGE CURRENT
(
A
)
90
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001
80
70
60
50
40
30
20
10
0
+150
C
+25
C
-55
C
I Z
, ZENER CURRENT
(mA)
Figure 7. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
BZX84C2V4LT1 Series
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT23
TO236AB
CASE 31809
ISSUE AH
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102 0.1197
2.80
3.04
INCHES
B 0.0472 0.0551
1.20
1.40
C 0.0385 0.0498
0.99
1.26
D 0.0140 0.0200
0.36
0.50
G 0.0670 0.0826
1.70
2.10
H 0.0040 0.0098
0.10
0.25
J 0.0034 0.0070
0.085
0.177
K 0.0180 0.0236
0.45
0.60
L 0.0350 0.0401
0.89
1.02
S 0.0830 0.0984
2.10
2.50
V 0.0177 0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318-01, -02, AND -06 OBSOLETE, NEW
STANDARD 318-09.
1
3
2
A
L
B
S
V
G
D
H
C
K
J
BZX84C2V4LT1 Series
http://onsemi.com
7
Notes
BZX84C2V4LT1 Series
http://onsemi.com
8
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
BZX84C2V4LT1/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
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