Semiconductor Components Industries, LLC, 2004
December, 2004 - Rev. 8
1
Publication Order Number:
BZX84C2V4LT1/D
BZX84B4V7LT1,
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT-23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT-23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
Pb-Free Packages are Available
225 mW Rating on FR-4 or FR-5 Board
Zener Breakdown Voltage Range - 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V-0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Total Power Dissipation on FR-5 Board,
(Note 1) @ T
A
= 25
C
P
D
225
mW
(Note 1) @ T
A
= 25 C
Derated above 25
C
Thermal Resistance, Junction-to-Ambient
R
q
JA
225
1.8
556
mW
mW/
C
C/W
Total Power Dissipation on Alumina
Substrate, (Note 2) @ T
A
= 25
C
P
D
300
mW
Substrate, (Note 2) @ T
A
= 25 C
Derated above 25
C
Thermal Resistance, Junction-to-Ambient
R
q
JA
300
2.4
417
mW
mW/
C
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
-65 to
+150
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR-5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
Device*
Package
Shipping
ORDERING INFORMATION
SOT-23
CASE 318
STYLE 8
3
Cathode
1
Anode
BZX84CxxxLT1
SOT-23
3000/Tape & Reel
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
xxx = Specific Device Code
M
=Month Code
xxxM
*The "T1" suffix refers to an 8 mm, 7 inch reel.
The "T3" suffix refers to an 8 mm, 13 inch reel.
BZX84CxxxLT3
SOT-23
10,000/Tape & Reel
3
1
2
BZX84BxxxLT1
SOT-23
3000/Tape & Reel
BZX84BxxxLT3
SOT-23
10,000/Tape & Reel
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BZX84CxxxLT1G
SOT-23
(Pb-Free)
3000/Tape & Reel
BZX84BxxxLT1G
SOT-23
(Pb-Free)
3000/Tape & Reel
BZX84B4V7LT1, BZX84C2V4LT1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode)
(T
A
= 25
C
unless otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
Q
V
Z
Maximum Temperature Coefficient of V
Z
C
Max. Capacitance @ V
R
= 0 and f = 1 MHz
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
BZX84B4V7LT1, BZX84C2V4LT1 Series
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3
ELECTRICAL CHARACTERISTICS - BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode)
(T
A
= 25
C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
(Devices listed in
bold, italic are ON Semiconductor Preferred devices.)
V
Z1
(Volts)
@ I
ZT1
= 5 mA
(Note 3)
Z
ZT1
(
W
)
V
Z2
(V)
@ I
ZT2
= 1 mA
(Note 3)
Z
ZT2
(
W
)
V
Z3
(V)
@ I
ZT3
= 20 mA
(Note 3)
Z
ZT3
(
W
)
Max Reverse
Leakage
Current
q
VZ
(mV/k)
@ I
ZT1
= 5 mA
C (pF)
Device
Device
Marking
Min
Nom
Max
(
W
)
@ I
ZT1
=
5 mA
Min
Max
(
W
)
@ I
ZT2
=
1 mA
Min
Max
(
W
)
@ I
ZT3
=
20 mA
V
R
Volts
I
R
m
A
@
Min
Max
C (pF)
@ V
R
= 0
f = 1 MHz
BZX84C2V4LT1, G*
Z11
2.2
2.4
2.6
100
1.7
2.1
600
2.6
3.2
50
50
1
-3.5
0
450
BZX84C2V7LT1, G*
Z12
2.5
2.7
2.9
100
1.9
2.4
600
3
3.6
50
20
1
-3.5
0
450
BZX84C3V0LT1
Z13
2.8
3
3.2
95
2.1
2.7
600
3.3
3.9
50
10
1
-3.5
0
450
BZX84C3V3LT1, G*
Z14
3.1
3.3
3.5
95
2.3
2.9
600
3.6
4.2
40
5
1
-3.5
0
450
BZX84C3V6LT1, G*
Z15
3.4
3.6
3.8
90
2.7
3.3
600
3.9
4.5
40
5
1
-3.5
0
450
BZX84C3V9LT1, G*
Z16
3.7
3.9
4.1
90
2.9
3.5
600
4.1
4.7
30
3
1
-3.5
-2.5
450
BZX84C4V3LT1, G*
W9
4
4.3
4.6
90
3.3
4
600
4.4
5.1
30
3
1
-3.5
0
450
BZX84C4V7LT1
Z1
4.4
4.7
5
80
3.7
4.7
500
4.5
5.4
15
3
2
-3.5
0.2
260
BZX84C5V1LT1
Z2
4.8
5.1
5.4
60
4.2
5.3
480
5
5.9
15
2
2
-2.7
1.2
225
BZX84C5V6LT1
Z3
5.2
5.6
6
40
4.8
6
400
5.2
6.3
10
1
2
-2.0
2.5
200
BZX84C6V2LT1
Z4
5.8
6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
BZX84C6V8LT1
Z5
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
BZX84C7V5LT1
Z6
7
7.5
7.9
15
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
BZX84C8V2LT1
Z7
7.7
8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
BZX84C9V1LT1
Z8
8.5
9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
BZX84C10LT1, G*
Z9
9.4
10
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7
4.5
8.0
130
BZX84C11LT1, G*
Y1
10.4
11
11.6
20
10.2
11.6
150
10.4
11.8
10
0.1
8
5.4
9.0
130
BZX84C12LT1, G*
Y2
11.4
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8
6.0
10.0
130
BZX84C13LT1, G*
Y3
12.4
13
14.1
30
12.3
14
170
12.5
14.2
15
0.1
8
7.0
11.0
120
BZX84C15LT1
Y4
14.3
15
15.8
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13.0
110
BZX84C16LT1, G*
Y5
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14.0
105
BZX84C18LT1
Y6
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16.0
100
BZX84C20LT1, G*
Y7
18.8
20
21.2
55
18.7
21.1
225
18.9
21.4
20
0.05
14
14.4
18.0
85
BZX84C22LT1, G*
Y8
20.8
22
23.3
55
20.7
23.2
250
20.9
23.4
25
0.05
15.4
16.4
20.0
85
BZX84C24LT1
Y9
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22.0
80
V
Z1
Below
@ I
ZT1
= 2 mA
Z
ZT1
Below
V
Z2
Below
@ I
ZT2
= 0.1 m
A
Z
ZT2
Below
V
Z3
Below
@ I
ZT3
= 10 mA
Z
ZT3
Below
Max Reverse
Leakage
Current
q
VZ
(mV/k) Below
@ I
ZT1
= 2 mA
C (pF)
Device
Device
Marking
Min
Nom
Max
Below
@ I
ZT1
=
2 mA
Min
Max
Below
@ I
ZT4
=
0.5 mA
Min
Max
Below
@ I
ZT3
=
10 mA
V
R
(V)
I
R
m
A
@
Min
Max
C (pF)
@ V
R
= 0
f = 1 MHz
BZX84C27LT1, G*
Y10
25.1
27
28.9
80
25
28.9
300
25.2
29.3
45
0.05
18.9
21.4
25.3
70
BZX84C30LT1
Y11
28
30
32
80
27.8
32
300
28.1
32.4
50
0.05
21
24.4
29.4
70
BZX84C33LT1, G*
Y12
31
33
35
80
30.8
35
325
31.1
35.4
55
0.05
23.1
27.4
33.4
70
BZX84C36LT1
Y13
34
36
38
90
33.8
38
350
34.1
38.4
60
0.05
25.2
30.4
37.4
70
BZX84C39LT1, G*
Y14
37
39
41
130
36.7
41
350
37.1
41.5
70
0.05
27.3
33.4
41.2
45
BZX84C43LT1, G*
Y15
40
43
46
150
39.7
46
375
40.1
46.5
80
0.05
30.1
37.6
46.6
40
BZX84C47LT1, G*
Y16
44
47
50
170
43.7
50
375
44.1
50.5
90
0.05
32.9
42.0
51.8
40
BZX84C51LT1
Y17
48
51
54
180
47.6
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
BZX84C56LT1, G*
Y18
52
56
60
200
51.5
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
BZX84C62LT1
Y19
58
62
66
215
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
BZX84C68LT1, G*
Y20
64
68
72
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
BZX84C75LT1, G*
Y21
70
75
79
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
3. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25
C.
* The "G" suffix indicates Pb-Free package available.
BZX84B4V7LT1, BZX84C2V4LT1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS - BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode)
(T
A
= 25
C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
V
Z
(Volts) @ I
ZT
= 5 mA
Z
ZT
(
W
) @
I
ZT
= 5 mA
Max Reverse
Leakage
Current
q
VZ
(mV/k)
Device
V
Z
(Volts) @ I
ZT
= 5 mA
(Note 4)
I
ZT
= 5 mA
(Note 4)
I
R
@
V
R
(mV/k)
@ I
ZT
= 5 mA
C (pF)
@ V
R
=0
Device
Device
Marking
Min
Nom
Max
Max
m
A
@
Volts
Min
Max
@ V
R
=0,
f = 1 MHz
BZX84B4V7LT1
T10
4.61
4.7
4.79
80
3
2
-3.5
0.2
260
BZX84B5V1LT1, G*
T11
5.00
5.1
5.20
60
2
2
-2.7
1.2
225
BZX84B5V6LT1
T12
5.49
5.6
5.71
40
1
2
-2
2.5
200
BZX84B6V2LT1, G*
T13
6.08
6.2
6.32
10
3
4
0.4
3.7
185
BZX84B6V8LT1, G*
T14
6.66
6.8
6.94
15
2
4
1.2
4.5
155
BZX84B7V5LT1, G*
T15
7.35
7.5
7.65
15
1
5
2.5
5.3
140
BZX84B8V2LT1, G*
T16
8.04
8.2
8.36
15
0.7
5
3.2
6.2
135
BZX84B9V1LT1, G*
T17
8.92
9.1
9.28
15
0.5
6
3.8
7
130
BZX84B16LT1
T19
15.7
16
16.3
40
0.05
11.2
10.4
14
105
BZX84B18LT1
T20
17.6
18
18.4
45
0.05
12.6
12.4
16
100
4. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25
C.
* The "G" suffix indicates Pb-Free package available.
BZX84B4V7LT1, BZX84C2V4LT1 Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
VZ
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
V
Z
, NOMINAL ZENER VOLTAGE (V)
-3
-2
-1
0
1
2
3
4
5
6
7
8
12
11
10
9
8
7
6
5
4
3
2
Figure 1. Temperature Coefficients
(Temperature Range - 55
C to +150
C)
TYPICAL T
C
VALUES
V
Z
@ I
ZT
VZ
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
100
10
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range - 55
C to +150
C)
V
Z
@ I
ZT
100
V
Z
, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
10
1
Z ZT
, DYNAMIC IMPEDANCE (
)
1000
100
10
1
T
J
= 25
C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
I
Z
= 1 mA
5 mA
20 mA
V
F
, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I F
, FOR
W
ARD CURRENT
(mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150
C
75
C 25
C
0
C
TYPICAL T
C
VALUES
BZX84B4V7LT1, BZX84C2V4LT1 Series
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6
TYPICAL CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1
10
1
BIAS AT
50% OF V
Z
NOM
T
A
= 25
C
0 V BIAS
1 V BIAS
12
V
Z
, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
10
8
6
4
2
0
T
A
= 25
C
I Z
, ZENER CURRENT
(mA)
V
Z
, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110
30
50
70
90
T
A
= 25
C
I R
, LEAKAGE CURRENT
(
A
)
90
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001
80
70
60
50
40
30
20
10
0
+150
C
+25
C
-55
C
I Z
, ZENER CURRENT
(mA)
Figure 7. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
BZX84B4V7LT1, BZX84C2V4LT1 Series
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7
PACKAGE DIMENSIONS
SOT-23
TO-236AB
CASE 318-09
ISSUE AK
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW
STANDARD 318-08.
BZX84B4V7LT1, BZX84C2V4LT1 Series
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8
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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