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Электронный компонент: BZX84C4V7ET3

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Semiconductor Components Industries, LLC, 2004
July, 2004 - Rev. 3
1
Publication Order Number:
BZX84C2V4ET1/D
BZX84C2V4ET1 Series
Zener Voltage Regulators
225 mW SOT-23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT-23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
225 mW Rating on FR-4 or FR-5 Board
Zener Breakdown Voltage Range - 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power - 225 W (8
X
20
ms)
Pb-Free Package is Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V-0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20
m
s (Note 1)
@ T
L
25
C
P
pk
225
Watts
Total Power Dissipation on FR-5 Board,
(Note 2) @ T
A
= 25
C
Derated above 25
C
P
D
225
1.8
mW
mW/
C
Thermal Resistance,
Junction-to-Ambient
R
q
JA
556
C/W
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
A
= 25
C
Derated above 25
C
P
D
300
2.4
mW
mW/
C
Thermal Resistance,
Junction-to-Ambient
R
q
JA
417
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
-65 to
+150
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR-5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
SOT-23
CASE 318
STYLE 8
3
Cathode
1
Anode
BZX84CxxxET1
SOT-23
3000/Tape & Reel
MARKING DIAGRAM
xxx = Specific Device Code
M
= Date Code
xxxM
BZX84CxxxET3
SOT-23
10,000/Tape & Reel
3
1
2
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
BZX84CxxxET1G
SOT-23
(Pb-Free)
3000/Tape & Reel
BZX84C2V4ET1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode)
(T
A
= 25
C
unless otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
Q
V
Z
Maximum Temperature Coefficient of V
Z
C
Max. Capacitance @ V
R
= 0 and f = 1 MHz
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode)
(T
A
= 25
C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
(Devices listed in
bold, italic are ON Semiconductor Preferred devices.)
Device
V
Z1
(V)
@ I
ZT1
= 5 mA
(Note 4)
Z
ZT1
(
W
)
@ I
ZT1
V
Z2
(V)
@ I
ZT2
= 1 mA
(Note 4)
Z
ZT2
(
W
)
@ I
ZT2
V
Z3
(V)
@ I
ZT3
=20 mA
(Note 4)
Z
ZT3
(
W
)
@
Max
Reverse
Leakage
Current
q
VZ
(mV/k)
@ I
ZT1
=5 mA
C (pF)
@
V
R
= 0
Device
Device
Mark-
ing
Min
Nom
Max
@ I
ZT1
=
5 mA
Min
Max
@ I
ZT2
=
1 mA
Min
Max
@
I
ZT3
=
20 mA
V
R
(V)
I
R
m
A
@
Min
Max
V
R
= 0
f =
1 MHz
BZX84C3V3ET1
BA4
3.1
3.3
3.5
95
2.3
2.9
600
3.6
4.2
40
5
1
-3.5
0
450
BZX84C4V7ET1
BA9
4.4
4.7
5
80
3.7
4.7
500
4.5
5.4
15
3
2
-3.5
0.2
260
BZX84C5V1ET1
BB1
4.8
5.1
5.4
60
4.2
5.3
480
5
5.9
15
2
2
-2.7
1.2
225
BZX84C5V6ET1
BB2
5.2
5.6
6
40
4.8
6
400
5.2
6.3
10
1
2
-2.0
2.5
200
BZX84C6V2ET1, G*
BB3
5.8
6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
BZX84C6V8ET1
BB4
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
BZX84C7V5ET1
BB5
7
7.5
7.9
15
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
BZX84C10ET1
BB8
9.4
10
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7
4.5
8.0
130
BZX84C12ET1
BC1
11.4
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8
6.0
10.0
130
BZX84C15ET1
BC3
14.3
15
15.8
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13.0
110
BZX84C16ET1
BC4
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14.0
105
BZX84C18ET1
BC5
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16.0
100
BZX84C24ET1
BC8
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22.0
80
Device
V
Z1
Below
@ I
ZT1
= 2 mA
Z
ZT1
Below
@ I
ZT1
V
Z2
Below
@ I
ZT2
=
0.1 mA
Z
ZT2
Below
@ I
ZT4
V
Z3
Below
@ I
ZT3
= 10 m
A
Z
ZT3
Below
@ I
ZT3
Max
Reverse
Leakage
Current
q
VZ
(mV/k) Be-
low
@ I
ZT1
= 2
mA
C (pF)
@ V
R
= 0
Device
Device
Mark-
ing
Min
Nom
Max
@ I
ZT1
=
2 mA
Min
Max
@ I
ZT4
=
0.5 mA
Min
Max
@ I
ZT3
=
10 mA
V
R
(V)
I
R
m
A
@
Min
Max
= 0
f =
1 MHz
BZX84C27ET1
BC9
25.1
27
28.9
80
25
28.9
300
25.2
29.3
45
0.05
18.9
21.4
25.3
70
BZX84C43ET1
BK6
40
43
46
150
39.7
46
375
40.1
46.5
80
0.05
30.1
37.6
46.6
40
* The "G" suffix indicates Pb-Free package available.
4. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25
C
BZX84C2V4ET1 Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
VZ
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
V
Z
, NOMINAL ZENER VOLTAGE (V)
- 3
- 2
-1
0
1
2
3
4
5
6
7
8
12
11
10
9
8
7
6
5
4
3
2
Figure 1. Temperature Coefficients
(Temperature Range - 55
C to +150
C)
TYPICAL T
C
VALUES
V
Z
@ I
ZT
VZ
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
100
10
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range - 55
C to +150
C)
V
Z
@ I
ZT
100
V
Z
, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
10
1
Z ZT
, DYNAMIC IMPEDANCE (
)
1000
100
10
1
T
J
= 255C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
I
Z
= 1 mA
5 mA
20 mA
V
F
, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I F
, FOR
W
ARD CURRENT
(mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150
C
75
C
25
C
0
C
TYPICAL T
C
VALUES
BZX84C2V4ET1 Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1
10
1
BIAS AT
50% OF V
Z
NOM
0 V BIAS
1 V BIAS
12
V
Z
, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
10
8
6
4
2
0
T
A
= 25
C
I Z
, ZENER CURRENT
(mA)
V
Z
, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
10
30
50
70
90
I R
, LEAKAGE CURRENT
(
A
)
90
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001
80
70
60
50
40
30
20
10
0
+150
C
+ 25
C
- 55
C
I Z
, ZENER CURRENT
(mA)
Figure 7. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
Figure 9. 8
20
m
s Pulse Waveform
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
t, TIME (
m
s)
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I
RSM
/2 @ 20
m
s
% OF PEAK PULSE CURRENT
PEAK VALUE I
RSM
@ 8
m
s
T
A
= 25
C
T
A
= 25
C
BZX84C2V4ET1 Series
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT-23
TO-236AB
CASE 318-09
ISSUE AJ
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102 0.1197
2.80
3.04
INCHES
B 0.0472 0.0551
1.20
1.40
C 0.0385 0.0498
0.99
1.26
D 0.0140 0.0200
0.36
0.50
G 0.0670 0.0826
1.70
2.10
H 0.0040 0.0098
0.10
0.25
J 0.0034 0.0070
0.085
0.177
K 0.0180 0.0236
0.45
0.60
L 0.0350 0.0401
0.89
1.02
S 0.0830 0.0984
2.10
2.50
V 0.0177 0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318-01, -02, AND -06 OBSOLETE, NEW
STANDARD 318-09.
1
3
2
A
L
B
S
V
G
D
H
C
K
J
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
BZX84C2V4ET1 Series
http://onsemi.com
6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone: 81-3-5773-3850
BZX84C2V4ET1/D
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