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Электронный компонент: BZX85C6V8RL

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Semiconductor Components Industries, LLC, 2002
February, 2002 Rev. 1
1
Publication Order Number:
BZX85C3V3RL/D
BZX85C3V3RL Series
1 Watt DO-41 Hermetically
Sealed Glass Zener Voltage
Regulators
This is a complete series of 1 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of siliconoxide passivated junctions. All this in an axiallead
hermetically sealed glass package that offers protection in all common
environmental conditions.
Specification Features:
Zener Voltage Range 3.3 V to 85 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
DO41 (DO204AL) Package
Double Slug Type Construction
Metallurgical Bonded Construction
Oxide Passivated Die
Mechanical Characteristics:
CASE:
Double slug type, hermetically sealed glass
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230
C, 1/16
from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Max. Steady State Power Dissipation
@ T
L
50
C, Lead Length = 3/8
Derate above 50
C
P
D
1
6.67
W
mW/
C
Operating and Storage
Temperature Range
T
J
, T
stg
65 to
+200
C
Device
Package
Shipping
ORDERING INFORMATION
BZX85CxxxRL
Axial Lead
6000/Tape & Reel
BZX85CxxxRL2
Axial Lead
AXIAL LEAD
CASE 59
GLASS
http://onsemi.com
6000/Tape & Reel
Cathode
Anode
* The "2" suffix refers to 26 mm tape spacing.
L
BZX
85C
xxx
YWW
L
= Assembly Location
BZX85Cxxx = Device Code
=
(See Table Next Page)
Y
= Year
WW
= Work Week
MARKING DIAGRAM
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
BZX85C3V3RL Series
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless
otherwise noted, V
F
= 1.2 V Max., I
F
= 200 mA for all types)
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
I
R
Reverse Leakage Current @ V
R
V
R
Breakdown Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
I
R
Surge Current @ T
A
= 25
C
BZX85C3V3RL Series
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, V
F
= 1.2 V Max., I
F
= 200 mA for all types)
Zener Voltage (Notes 2 and 3)
Zener Impedance (Note 4)
Leakage Current
I
R
Device
Device
V
Z
(Volts)
@ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
@ V
R
I
R
(Note 5)
Device
(Note 1)
Device
Marking
Min
Nom
Max
mA
W
W
mA
A Max
Volts
mA
BZX85C3V3RL
BZX85C3V3
3.1
3.3
3.5
80
20
400
1
1
60
1380
BZX85C3V6RL
BZX85C3V6
3.4
3.6
3.8
60
15
500
1
1
30
1260
BZX85C3V9RL
BZX85C3V9
3.7
3.9
4.1
60
15
500
1
1
5
1190
BZX85C4V3RL
BZX85C4V3
4.0
4.3
4.6
50
13
500
1
1
3
1070
BZX85C4V7RL
BZX85C4V7
4.4
4.7
5.0
45
13
600
1
1.5
3
970
BZX85C5V1RL
BZX85C5V1
4.8
5.1
5.4
45
10
500
1
2
1
890
BZX85C5V6RL
BZX85C5V6
5.2
5.6
6.0
45
7
400
1
2
1
810
BZX85C6V2RL
BZX85C6V2
5.8
6.2
6.6
35
4
300
1
3
1
730
BZX85C6V8RL
BZX85C6V8
6.4
6.8
7.2
35
3.5
300
1
4
1
660
BZX85C7V5RL
BZX85C7V5
7.0
7.45
7.9
35
3
200
0.5
4.5
1
605
BZX85C8V2RL
BZX85C8V2
7.7
8.2
8.7
25
5
200
0.5
5
1
550
BZX85C9V1RL
BZX85C9V1
8.5
9.05
9.6
25
5
200
0.5
6.5
1
500
BZX85C10RL
BZX85C10
9.4
10
10.6
25
7
200
0.5
7
0.5
454
BZX85C12RL
BZX85C12
11.4
12.05
12.7
20
9
350
0.5
8.4
0.5
380
BZX85C13RL
BZX85C13
12.4
13.25
14.1
20
10
400
0.5
9.1
0.5
344
BZX85C15RL
BZX85C15
13.8
14.7
15.6
15
15
500
0.5
10.5
0.5
304
BZX85C16RL
BZX85C16
15.3
16.2
17.1
15
15
500
0.5
11
0.5
285
BZX85C18RL
BZX85C18
16.8
17.95
19.1
15
20
500
0.5
12.5
0.5
250
BZX85C22RL
BZX85C22
20.8
22.05
23.3
10
25
600
0.5
15.5
0.5
205
BZX85C24RL
BZX85C24
22.8
24.2
25.6
10
25
600
0.5
17
0.5
190
BZX85C27RL
BZX85C27
25.1
27
28.9
8
30
750
0.25
19
0.5
170
BZX85C30RL
BZX85C30
28
30
32
8
30
1000
0.25
21
0.5
150
BZX85C33RL
BZX85C33
31
33
35
8
35
1000
0.25
23
0.5
135
BZX85C36RL
BZX85C36
34
36
38
8
40
1000
0.25
25
0.5
125
BZX85C43RL
BZX85C43
40
43
46
6
50
1000
0.25
30
0.5
110
BZX85C47RL
BZX85C47
44
47
50
4
90
1500
0.25
33
0.5
95
BZX85C62RL
BZX85C62
58
62
66
4
125
2000
0.25
43
0.5
70
BZX85C75RL
BZX85C75
70
75
80
4
150
2000
0.25
51
0.5
60
BZX85C82RL
BZX85C82
77
82
87
2.7
200
3000
0.25
56
0.5
55
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The type numbers listed have zener voltage min/max limits as shown and have a standard tolerance on the nominal zener voltage of
5%.
2. AVAILABILITY OF SPECIAL DIODES
For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage
tolerances, contact your nearest ON Semiconductor representative.
3. ZENER VOLTAGE (V
Z
) MEASUREMENT
V
Z
measured after the test current has been applied to 40
10 msec, while maintaining the lead temperature (T
L
) at 30
C
1
C, 3/8
from
the diode body.
4. ZENER IMPEDANCE (Z
Z
) DERIVATION
The zener impedance is derived from 1 kHz cycle AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
5. SURGE CURRENT (I
R
) NONREPETITIVE
The rating listed in the electrical characteristics table is maximum peak, nonrepetitive, reverse surge current of 1/2 square wave or eqivalent
sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
. However, actual device capability is as described in Figure
5 of the General Data DO41 Glass.
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4
Figure 1. Power Temperature Derating Curve
T
L
, LEAD TEMPERATURE (
C)
0
20
40
60
200
80
100
120 140 160 180
0.25
0.5
0.75
1
1.25
L = LEAD LENGTH
TO HEAT SINK
L = 3/8
L = 1/8
L = 1
P
D
, STEADY ST
A
TE POWER DISSIP
A
TION (W
A
TTS)
BZX85C3V3RL Series
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5
Figure 2. Temperature Coefficients
(55
C to +150
C temperature range; 90% of the units are in the ranges indicated.)
a. Range for Units to 12 Volts
b. Range for Units to 12 to 100 Volts
+12
+10
+8
+6
+4
+2
0
-2
-4
2
3
4
5
6
7
8
9
10
11
12
V
Z
, ZENER VOLTAGE (VOLTS)
V Z
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
100
70
50
30
20
10
7
5
3
2
1
10
20
30
50
70 100
V
Z
, ZENER VOLTAGE (VOLTS)
V Z
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
V
Z
@ I
ZT
RANGE
RANGE
V
Z
@ I
ZT
Figure 3. Typical Thermal Resistance
versus Lead Length
Figure 4. Effect of Zener Current
175
150
125
100
75
50
25
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
L, LEAD LENGTH TO HEAT SINK (INCHES)
JL
, JUNCTIONT
OLEAD
THERMAL
RESIST
ANCE (mV/
C/W)
V Z
,
TEMPERA
TURE COEFFICIENT
(mV/
C) +6
+4
+2
0
-2
-4
3
4
5
6
7
8
V
Z
, ZENER VOLTAGE (VOLTS)
V
Z
@ I
Z
T
A
= 25
C
20 mA
0.01 mA
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE:
CHANGES IN ZENER CURRENT DO NOT
NOTE:
EFFECT TEMPERATURE COEFFICIENTS
Figure 5. Maximum Surge Power
100
70
50
30
20
10
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500 1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
Ppk
, PEAK SURGE POWER (W
A
TTS)
11 V-100 V NONREPETITIVE
3.3 V-10 V NONREPETITIVE
5% DUTY CYCLE
10% DUTY CYCLE
20% DUTY CYCLE
RECTANGULAR
WAVEFORM
T
J
= 25
C PRIOR TO
INITIAL PULSE
BZX85C3V3RL Series
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6
V
F
, FORWARD VOLTAGE (VOLTS)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1000
500
200
100
50
20
10
5
2
1
I F
, FOR
W
ARD CURRENT
(mA)
MAXIMUM
150
C
75
C
0
C
25
C
Figure 6. Effect of Zener Current
on Zener Impedance
Figure 7. Effect of Zener Voltage
on Zener Impedance
Figure 8. Typical Leakage Current
1000
500
200
100
50
20
10
5
2
1
0.1
0.2
0.5
1
2
5
10
20
50 100
I
Z
, ZENER CURRENT (mA)
Z Z
, DYNAMIC IMPEDANCE (OHMS)
1000
700
500
200
100
70
50
20
10
7
5
2
1
1
2
100
V
Z
, ZENER VOLTAGE (V)
3
5
7
10
20
30
50 70
Z Z
, DYNAMIC IMPEDANCE (OHMS)
10000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
I R
, LEAKAGE CURRENT
(
A)
3
4
5
6
7
8
9
10
11
12
13
14 15
V
Z
, NOMINAL ZENER VOLTAGE (VOLTS)
+25
C
+125
C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
T
J
= 25
C
i
Z
(rms) = 0.1 I
Z
(dc)
f = 60 Hz
6.2 V
27 V
V
Z
= 2.7 V
47 V
T
J
= 25
C
i
Z
(rms) = 0.1 I
Z
(dc)
f = 60 Hz
20 mA
5 mA
I
Z
= 1 mA
0 V BIAS
1 V BIAS
400
300
200
100
50
20
10
8
4
1
2
5
10
20
50
100
V
Z
, NOMINAL V
Z
(VOLTS)
C, CAP
ACIT
ANCE (pF)
50% OF BREAKDOWN BIAS
MINIMUM
Figure 9. Typical Capacitance versus V
Z
Figure 10. Typical Forward Characteristics
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7
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
LA
P
D
+ T
A
.
LA
is the lead-to-ambient thermal resistance (
C/W) and P
D
is the power dissipation. The value for
LA
will vary and
depends on the device mounting method.
LA
is generally 30
to 40
C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
JL
is the increase in junction temperature above the lead
temperature and may be found as follows:
T
J
= T
L
+
T
JL
.
T
JL
=
JL
P
D
.
JL
may be determined from Figure 3 for dc power
conditions. For worst-case design, using expected limits of
I
Z
, limits of P
D
and the extremes of T
J
(
T
J
) may be
estimated. Changes in voltage, V
Z
, can then be found from:
V =
VZ
T
J
.
VZ
, the zener voltage temperature coefficient, is found
from Figure 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 5. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 5 be exceeded.
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8
OUTLINE DIMENSIONS
1 Watt DO41 Glass
Zener Voltage Regulators Axial Leaded
GLASS DO41
CASE 5910
ISSUE R
B
D
K
K
F
F
A
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
4.10
5.20
0.161
0.205
B
2.00
2.70
0.079
0.106
D
0.71
0.86
0.028
0.034
F
---
1.27
---
0.050
K
25.40
---
1.000
---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 59-04 OBSOLETE, NEW STANDARD 59-09.
4. 59-03 OBSOLETE, NEW STANDARD 59-10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
BZX85C3V3RL/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 8002829855 Toll Free USA/Canada