Semiconductor Components Industries, LLC, 2004
July, 2004 - Rev. 4
1
Publication Order Number:
DTA114EET1/D
DTA114EET1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC-75/SOT-416 package which is designed for low power
surface mount applications.
Features
Pb-Free Packages are Available*
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-75/SOT-416 package can be soldered using wave or reflow.
The modified gull-winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation, FR-4 Board
(Note 1) @ T
A
= 25
C
Derate above 25
C
P
D
200
1.6
mW
mW/
C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
q
JA
600
C/W
Total Device Dissipation, FR-4 Board
(Note 2) @ T
A
= 25
C
Derate above 25
C
P
D
300
2.4
mW
mW/
C
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
q
JA
400
C/W
Junction and Storage Temperature Range
T
J
, T
stg
-55 to
+150
C
1. FR-4 @ Minimum Pad.
2. FR-4 @ 1.0
1.0 Inch Pad.
SC-75/SOT-416
CASE 463
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON BIAS
RESISTOR TRANSISTORS
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
x
= Specific Device Code
M
= Date Code
MARKING
DIAGRAM
x M
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See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
DTA114EET1 Series
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2
ORDERING INFORMATION AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Package
Shipping
DTA114EET1
6A
10
10
SC-75
3000 Tape & Reel
DTA124EET1
6B
22
22
SC-75
3000 Tape & Reel
DTA144EET1
6C
47
47
SC-75
3000 Tape & Reel
DTA114YET1
6D
10
47
SC-75
3000 Tape & Reel
DTA114TET1
6E
10
SC-75
3000 Tape & Reel
DTA143TET1
6F
4.7
SC-75
3000 Tape & Reel
DTA123EET1
6H
2.2
2.2
SC-75
3000 Tape & Reel
DTA123EET1G
6H
2.2
2.2
SC-75
(Pb-Free)
3000 Tape & Reel
DTA143EE
6J
4.7
4.7
SC-75
3000 Tape & Reel
DTA143EET1
6J
4.7
4.7
SC-75
3000 Tape & Reel
DTA143EET1G
6J
4.7
4.7
SC-75
(Pb-Free)
3000 Tape & Reel
DTA143ZET1
6K
4.7
47
SC-75
3000 Tape & Reel
DTA124XET1
6L
22
47
SC-75
3000 Tape & Reel
DTA124XET1G
6L
22
47
SC-75
(Pb-Free)
3000 Tape & Reel
DTA123JET1
6M
2.2
47
SC-75
3000 Tape & Reel
DTA115EET1
6N
100
100
SC-75
3000 Tape & Reel
DTA144WET1
6P
47
22
SC-75
3000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
DTA114EET1
(V
EB
= 6.0 V, I
C
= 0)
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
m
A, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
-
-
Vdc
3. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
DTA114EET1 Series
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
DTA114EET1
(V
CE
= 10 V, I
C
= 5.0 mA)
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
250
250
15
27
140
130
140
150
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA)
DTA123EET1
(I
C
= 10 mA, I
B
= 1 mA)
DTA114TET1/DTA143TET1
DTA143ZET1/DTA124XET1
DTA143EET1
V
CE(sat)
-
-
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
W
)
DTA114EET1
DTA124EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
W
)
DTA144EET1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
W
)
DTA115EET1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
W
)
DTA144WET1
V
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
W
)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
W
)
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
V
OH
4.9
-
-
Vdc
Input Resistor
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
k
W
Resistor Ratio
DTA114EET1/DTA124EET1
DTA144EET1/DTA115EET1
DTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1/DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144WET1
R
1
/R
2
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
-
4. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
DTA114EET1 Series
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4
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
R
q
JA
= 600
C/W
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED
TRANSIENT
THERMAL
RESIST
ANCE
t, TIME (s)
Figure 2. Normalized Thermal Response
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
DTA114EET1 Series
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5
TYPICAL ELECTRICAL CHARACTERISTICS - DTA114EET1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 3. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= -25
C
25
C
1
2
3
4
5
6
7
8
9
10
Figure 4. DC Current Gain
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
Figure 7. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
0.1
1
0
40
50
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
-25
C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10
20
30
40
50
T
A
= -25
C
25
C
75
C
75
C
I
C
/I
B
= 10
50
0
10
20
30
40
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
0
T
A
= -25
C
25
C
75
C
25
C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
DTA114EET1 Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS - DTA124EET1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 8. V
CE(sat)
versus I
C
Figure 9. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
Figure 10. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
0
10
20
30
V
O
= 0.2 V
T
A
= -25
C
75
C
100
10
1
0.1
40
50
Figure 11. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 12. Input Voltage versus Output Current
0.01
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
0
20
50
75
C
25
C
T
A
= -25
C
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
25
C
I
C
/I
B
= 10
25
C
-25
C
V
CE
= 10 V
T
A
= 75
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
75
C
25
C
T
A
= -25
C
V
O
= 5 V
DTA114EET1 Series
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7
TYPICAL ELECTRICAL CHARACTERISTICS - DTA144EET1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 13. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0
10
20
30
40
75
C
25
C
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
Figure 14. DC Current Gain
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
-25
C
Figure 15. Output Capacitance
Figure 16. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0
10
25
C
V
in
, INPUT VOLTAGE (VOLTS)
-25
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
1
2
3
4
5
6
7
8
9
Figure 17. Input Voltage versus Output Current
100
10
1
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
T
A
= -25
C
25
C
75
C
50
I
C
/I
B
= 10
T
A
= -25
C
25
C
T
A
= 75
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
T
A
= 75
C
V
O
= 0.2 V
DTA114EET1 Series
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8
TYPICAL ELECTRICAL CHARACTERISTICS - DTA114YET1
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8 10 15 20 25 30 35 40 45 50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 18. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
Figure 19. DC Current Gain
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 20. Output Capacitance
Figure 21. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
Figure 22. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25
C
25
C
T
A
= 75
C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2
4 6
8
15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
LOAD
+12 V
Figure 23. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25
C
I
C
/I
B
= 10
T
A
= -25
C
T
A
= 75
C
25
C
-25
C
V
O
= 5 V
V
O
= 0.2 V
25
C
T
A
= -25
C
75
C
75
C
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9
TYPICAL ELECTRICAL CHARACTERISTICS -- DTA115EET1
75
C
25
C
-25
C
Figure 24. Maximum Collector Voltage versus
Collector Current
Figure 25. DC Current Gain
Figure 26. Output Capacitance
Figure 27. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 28. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
7
6
5
4
3
2
1
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.01
1000
V
CE(sat)
, MAXIMUM COLLECT
OR
VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
60
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
0.2
0.4
0.8
1.0
100
6
5
4
3
2
1
0
0.1
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
100
12
10
8
6
4
2
0
1
10
18
16
14
20
V
in
, INPUT VOL
T
AGE (VOL
TS)
I
C
/I
B
= 10
75
C
25
C
T
A
= -25
C
V
CE
= 10 V
75
C
25
C
T
A
= -25
C
V
O
= 5 V
V
O
= 0.2 V
75
C
25
C
T
A
= -25
C
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
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10
TYPICAL ELECTRICAL CHARACTERISTICS -- DTA144WET1
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
Figure 31. Output Capacitance
Figure 32. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 33. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
35
30
25
20
15
10
5
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
0.01
1000
V
CE(sat)
, MAXIMUM COLLECT
OR
VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
60
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
0.2
0.4
0.8
1.0
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
11
9
8
7
100
15
10
5
0
1
10
20
25
V
in
, INPUT VOL
T
AGE (VOL
TS)
50
45
40
0.1
0.01
10
1.2
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
75
C
25
C
T
A
= -25
C
V
O
= 5 V
75
C
25
C
T
A
= -25
C
V
O
= 0.2 V
75
C
25
C
T
A
= -25
C
I
C
/I
B
= 10
V
CE
= 10 V
75
C
25
C
T
A
= -25
C
DTA114EET1 Series
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11
PACKAGE DIMENSIONS
SC-75/SOT-416
CASE 463-01
ISSUE C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
0.70
0.90
0.028
0.035
B
1.40
1.80
0.055
0.071
C
0.60
0.90
0.024
0.035
D
0.15
0.30
0.006
0.012
G
1.00 BSC
0.039 BSC
H
---
0.10
---
0.004
J
0.10
0.25
0.004
0.010
K
1.45
1.75
0.057
0.069
L
0.10
0.20
0.004
0.008
S
0.50 BSC
0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008)
B
-A-
-B-
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.10
0.043
0.53
0.020
0.50
0.020
mm
inches
SCALE 10:1
0.53
0.020
DTA114EET1 Series
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12
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