Semiconductor Components Industries, LLC, 1999
February, 2000 Rev. 1
1
Publication Order Number:
MAC4SM/D
MAC4SM, MAC4SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
High Immunity to dv/dt -- 50 V/
ms Minimum at 125_C
Commutating di/dt -- 3.0 A/ms Minimum at 125
_C
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
On-State Current Rating of 4 Amperes RMS at 100
_C
High Surge Current Capability -- 40 Amperes
Blocking Voltage to 800 Volts
Rugged, Economical TO220AB Package
Operational in Three Quadrants: Q1, Q2, and Q3
Device Marking: Logo, Device Type, e.g., MAC4SM, Date Code
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(TJ = 40 to 125
C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC4SM
MAC4SN
VDRM,
VRRM
600
800
Volts
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 100
C)
IT(RMS)
4.0
Amps
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125
C)
ITSM
40
Amps
Circuit Fusing Consideration
(t = 8.33 ms)
I2t
6.6
A2sec
Peak Gate Power
(Pulse Width
1.0
s, TC = 100
C)
PGM
0.5
Watt
Average Gate Power
(t = 8.3 ms, TC = 100
C)
PG(AV)
0.1
Watt
Operating Junction Temperature Range
TJ
40 to
+125
C
Storage Temperature Range
Tstg
40 to
+150
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
4 AMPERES RMS
600 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MAC4SM
TO220AB
50 Units/Rail
MAC4SN
TO220AB
TO220AB
CASE 221A
STYLE 4
1
2
3
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
http://onsemi.com
50 Units/Rail
MT1
G
MT2
MAC4SM, MAC4SN
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance -- Junction to Case
-- Junction to Ambient
R
JC
R
JA
2.2
62.5
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
C
ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
C
TJ = 125
C
IDRM,
IRRM
--
--
--
--
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage(1)
(ITM =
6.0 A)
VTM
--
1.3
1.6
V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
IGT
2.9
2.9
2.9
4.0
4.7
6.0
10
10
10
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current =
200 mA)
IH
2.0
5.0
15
mA
Latching Current (VD = 12 V, IG = 10 mA)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
IL
--
--
--
6.0
15
6.0
30
30
30
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VGT
0.5
0.5
0.5
0.7
.65
0.7
1.3
1.3
1.3
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/
s, Gate Open,
TJ = 125
C, f = 500 Hz, CL = 5.0
F, LL = 20 mH, No Snubber)
(di/dt)c
3.0
4.0
--
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125
C)
dv/dt
50
150
--
V/
s
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40
sec; diG/dt = 200 mA/
sec; f = 60 Hz
di/dt
--
--
10
A/
s
(1) Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
MAC4SM, MAC4SN
http://onsemi.com
3
+ Current
+ Voltage
VTM
IH
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
VTM
IH
VTM
Maximum On State Voltage
IH
Holding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
() IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
() MT2
REF
MT1
() IGT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III
Quadrant IV
Quadrant II
Quadrant I
Quadrant Definitions for a Triac
IGT
+ IGT
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
MAC4SM, MAC4SN
http://onsemi.com
4
30
TJ, JUNCTION TEMPERATURE (
C)
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
TJ, JUNCTION TEMPERATURE (
C)
I GT
, GA
TE
TRIGGER CURRENT
(mA)
V
GT
, GA
TE
TRIGGER
VOL
T
AGE
(VOL
TS)
40
10
20
50
80
110 125
100
1
1.0
0.4
Q3
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
, LA
TCHING
CURRENT
(mA)
TJ, JUNCTION TEMPERATURE (
C)
, HOLDING CURRENT
(mA)
TJ, JUNCTION TEMPERATURE (
C)
Figure 3. Typical Latching Current
versus Junction Temperature
Figure 4. Typical Holding Current
versus Junction Temperature
25
5
35
65
95
10
100
1
10
100
1
10
40
10
20
50
80
110 125
25
5
35
65
95
40
10
20
50
80
110 125
25
5
35
65
95
0.5
0.6
0.7
0.8
0.9
40
10
20
50
80
110 125
25
5
35
65
95
Figure 5. Typical RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMP)
125
120
115
110
3
2.5
2
1.5
1
0.5
0
T
C
, CASE
TEMPERA
TURE (
C
)
Figure 6. On-State Power Dissipation
IT(RMS), RMS ON-STATE CURRENT (AMP)
4
3
2
1
0
5
4
3
1
2
P
(A
V)
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
0
105
6
0.3
I H
MT2 Positive
MT2 Negative
Q2
Q1
Q3
Q2
Q1
I L
Q3
Q2
Q1
4
3.5
30
60
90
120
180
DC
60
90
120
180
DC
MAC4SM, MAC4SN
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5
Figure 7. Typical On-State Characteristics
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
0
I T
, INST
ANT
ANEOUS ON-ST
A
TE CURRENT
(AMPS)
0.5
1
1.5
2
2.5
3
3.5
10
1
0.1
Figure 8. Typical Thermal Response
t, TIME (ms)
r(t), TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
1
0.1
0.01
10000
1000
100
10
1
0.1
Maximum @ TJ = 125
C
Typical @ TJ = 125
C
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