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Электронный компонент: MBR3100RL

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Semiconductor Components Industries, LLC, 2003
April, 2003 - Rev. 3
1
Publication Order Number:
MBR3100/D
MBR3100
Preferred Device
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low- voltage,
high- frequency inverters, free wheeling diodes, and polarity
protection diodes.
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard-Ring for Stress Protection
Low Forward Voltage
150
C Operating Junction Temperature
High Surge Capacity
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220
C Max. for 10 Seconds, 1/16
from case
Shipped in plastic bags, 500 per bag
Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to
the part number
Polarity: Cathode indicated by Polarity Band
Marking: B3100
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
T
A
= 100
C (R
q
JA
= 28
C/W,
P.C. Board Mounting, see Note 2)
I
O
3.0
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
FSM
150
A
Operating and Storage Junction
Temperature Range
(Reverse Voltage Applied)
T
J
, T
stg
-65 to +150
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10
V/ns
Device
Package
Shipping
ORDERING INFORMATION
AXIAL LEAD
CASE 267-05
(DO-201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
100 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MBR3100
Axial Lead
500 Units/Bag
MBR3100RL
Axial Lead
1500/Tape & Reel
MARKING DIAGRAM
MBR
3100
MBR3100 = Device Code
http://onsemi.com
MBR3100
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient (see Note 2, Mounting Method 3)
R
JA
28
C/W
ELECTRICAL CHARACTERISTICS
(T
L
= 25
C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 3.0 Amps, T
L
= 25
C)
(i
F
= 3.0 Amps, T
L
= 100
C)
v
F
0.79
0.69
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
T
L
= 25
C
T
L
= 100
C
i
R
0.6
20
mA
1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
I
F (AV)
, AVERAGE FORWARD CURRENT (AMPS)
0
2.0
1.0
3.0
4.0
5.0
0.5
1
1.5
2
2.5
P
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
F (A
V)
T
A
, AMBIENT TEMPERATURE (
C)
20
100
60
40
80
4
2
0
dc
120
140
160
180
I ,
A
VERAGE FOR
W
ARD CURRENT
(AMPS)
F (A
V)
V
R
REVERSE VOLTAGE (VOLTS)
0
20
10
30
40
0.001
0.002
0.005
0.01
0.05
0.02
0.1
0.5
0.2
1
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.2
0.1
0.3 0.4 0.5
5
0.2
0.1
3
2
1
0.7
0.6
0.8 0.9
0.3
0.05
0.5
I , REVERSE CURRENT
(mA)
R
i , INST
ANT
ANEOUS FOR
W
ARD CURRENT
(AMPS)
F
25
C
100
C
T
J
= 150
C
50
30
20
10
1
1.2 1.3
1.1
50
60
80
90
100
0.0001
0.0002
0.0005
25
C
70
100
C
T
J
= 150
C
125
C
1
3
5
6
7
8
3
3.5
4
dc
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if V
R
is sufficient below rated V
R
.
SQUARE
WAVE
SQUARE
WAVE
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Current Derating
(Mounting Method #3 per Note 2)
Figure 4. Power Dissipation
MBR3100
http://onsemi.com
3
V
R
, REVERSE VOLTAGE (VOLTS)
0
20
60
40
80
300
400
C, CAP
ACIT
ANCE (pF)
200
40
80
50
100
Figure 5. Typical Capacitance
T
J
= 25
C
f = 1 MHz
TYPICAL VALUES FOR R
JA
IN STILL AIR
Data shown for thermal resistance junction-to-ambient
(R
JA
) for the mountings shown is to be used as typical
guideline values for preliminary engineering, or in case the
tie point temperature cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8
1/4
1/2
3/4
R
JA
50
51
53
55
C/W
C/W
C/W
58
59
61
63
28
NOTE 2 -- MOUNTING DATA
Mounting Method 1
P.C. Board where available
copper surface is small.
L
L
L
Mounting Method 2
Vector Push-In
Terminals T-28
L
Mounting Method 3
P.C. Board with
2-1/2
X 2-1/2
copper surface.
L = 1/2''
Board Ground Plane
MBR3100
http://onsemi.com
4
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267-05
(DO-201AD)
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
1
2
K
A
K
D
B
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.287
0.374
7.30
9.50
B
0.189
0.209
4.80
5.30
D
0.047
0.051
1.20
1.30
K
1.000
---
25.40
---
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
MBR3100/D
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