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Электронный компонент: MBRS260T3

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Semiconductor Components Industries, LLC, 2003
January, 2003 - Rev. 1
1
Publication Order Number:
MBRS260T3/D
MBRS260T3
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal-to-silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
Compact Package with J-Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over-Voltage Protection
Low Forward Voltage Drop
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8
Weight: 95 mg (approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260
C Max. for 10 Seconds
Available in 12 mm Tape, 2500 Units per 13
Reel, Add "T3" Suffix
to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings: Machine Model = C
ESD Ratings:
Human Body Model = 3B
Marking: B26
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60
V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 95
C)
I
O
2.0
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
FSM
60
A
Storage/Operating Case
Temperature
T
stg
, T
C
-55 to +150
C
Operating Junction Temperature
T
J
-55 to +125
C
Voltage Rate of Change
(Rated V
R
, T
J
= 25
C)
dv/dt
10,000
V/
m
s
Device
Package
Shipping
ORDERING INFORMATION
SMB
CASE 403A
PLASTIC
MBRS260T3
SMB
2500/Tape & Reel
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
60 VOLTS
MARKING DIAGRAM
B26
B26 = Device Code
http://onsemi.com
MBRS260T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance - Junction-to-Lead (Note 1)
Thermal Resistance - Junction-to-Ambient (Note 2)
R
JL
R
JA
24
80
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
v
F
T
J
= 25
C
T
J
= 125
C
Volts
Maximum Instantaneous Forward Voltage
(Note 3)
(i
F
= 1.0 A)
(i
F
= 2.0 A)
0.51
0.63
0.475
0.55
Maximum Instantaneous Reverse Current (Note 3)
I
R
T
J
= 25
C
T
J
= 125
C
mA
Maximum Instantaneous Reverse Current (Note 3)
(V
R
= 60 V)
0.2
10
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width
250
s, Duty Cycle
2.0%.
Figure 1. Typical Forward Voltage
0.1
0.2
0.4
0.7
0.6
10
0.1
1
I
F
, INST
ANT
ANEOUS FOR
W
ARD
CURRENT (AMPS)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.2
0.8
0.4
0.6
0.3
0.5
10
0.1
1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
I
F
, INST
ANT
ANEOUS FOR
W
ARD
CURRENT (AMPS)
Figure 3. Typical Reverse Current
10
30
0
20
40
I
R
, REVERSE CURRENT (AMPS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
75
C
25
C
1.0E-02
125
C
75
C
25
C
10
30
0
20
40
10
C, CAP
ACIT
ANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
0.3
0.5
0.8
125
C
75
C
25
C
125
C
60
50
50
60
100
0.7
0.1
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1.0E-07
25
C
f = 1 MHz
MBRS260T3
http://onsemi.com
3
Figure 5. Current Derating - Junction to Lead
70
90
60
80
100
1.5
I
F
, A
VERAGE FOR
W
ARD CURRENT (A)
T
L
, LEAD TEMPERATURE (
C)
Figure 6. Forward Power Dissipation
2.5
3
3.5
0.5
1.5
0
1
2
0
0.2
P
FO
, A
VERAGE POWER DISSIP
A
TION (W)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.4
0.6
120
110
130
2.5
3
1
1.8
2
0
0.5
1
2
dc
SQUARE WAVE
0.8
1.2
1.4
1.6
dc
SQUARE WAVE
Figure 7. Thermal Response - Junction to Case
Figure 8. Thermal Response - Junction to Ambient
0.1
0.00001
t, TIME (s)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
0.0001
0.001
0.01
1.0
10
100
1000
50%
20%
10%
5.0%
2.0%
1.0%
R
tjl(t)
= R
tjl*r(t)
t, TIME (s)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
50%
20%
10%
5.0%
2.0%
1.0%
R
T
, TRANSIENT THERMAL RESIST
ANCE (NORMALIZED)
R
T
, TRANSIENT THERMAL RESIST
ANCE (NORMALIZED)
0.1
0.00001
0.0001
0.001
0.01
1.0
10
100
1000
R
tjl(t)
= R
tjl*r(t)
MBRS260T3
http://onsemi.com
4
PACKAGE DIMENSIONS
SMB
PLASTIC PACKAGE
CASE 403A-03
ISSUE D
A
S
D
B
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.160
0.180
4.06
4.57
B
0.130
0.150
3.30
3.81
C
0.075
0.095
1.90
2.41
D
0.077
0.083
1.96
2.11
H 0.0020 0.0060
0.051
0.152
J
0.006
0.012
0.15
0.30
K
0.030
0.050
0.76
1.27
P
0.020 REF
0.51 REF
S
0.205
0.220
5.21
5.59
MINIMUM SOLDER PAD SIZES
mm
inches
0.085
2.159
0.108
2.743
0.089
2.261
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
MBRS260T3/D
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