Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any topoftheline application requiring
backtoback diode configurations for minimum signal distortion and
detuning.
High Figure of Merit
Q = 140 (Typ) @ V
R
= 3.0 Vdc, f = 100
MHz
Guaranteed Capacitance Range
3742 pF @ V
R
= 3.0 Vdc (MV104)
Dual Diodes Save Space and Reduce Cost
Monolithic Chip Provides Near Perfect Matching Guaranteed
1.0% (Max) Over Specified Tuning Range
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
32
Vdc
Forward Current
I
F
200
mAdc
Total Power Dissipation @ T
A
= 25
C
Derate above 25
C
P
D
280
2.8
mW
mW/
C
Junction Temperature
T
J
+125
C
Storage Temperature Range
T
stg
55 to +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10
Adc)
V
(BR)R
32
--
--
Vdc
Reverse Voltage Leakage Current T
A
= 25
C
(V
R
= 30 Vdc)
T
A
= 60
C
I
R
--
--
--
--
50
500
nAdc
Diode Capacitance Temperature Coefficient
(V
R
= 4.0 Vdc, f = 1.0 MHz)
TC
C
--
280
--
ppm/
C
C
T
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 100 MHz
C
R
, Capacitance Ratio
C
3
/C
30
f = 1.0 MHz
Device
Min
Max
Min
Typ
Min
Max
MV104
37
42
100
140
2.5
2.8
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev. 2
1
Publication Order Number:
MV104/D
MV104
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
CASE 2911, STYLE 15
TO92 (TO226AA)
1
2
3
Pin 1
A1
Pin 3
A2
Pin 2
C
MV104
http://onsemi.com
2
TYPICAL CHARACTERISTICS (Each Diode)
Figure 1. Diode Capacitance (Each Diode)
100
70
40
20
10
1.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
C T
, DIODE CAP
ACIT
ANCE (pF)
Figure 2. Figure of Merit versus Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Figure of Merit versus Frequency
f, FREQUENCY (MHz)
Q, FIGURE OF MERIT
0
550
350
50
6.0
30
Q, FIGURE OF MERIT
2000
10
500
100
20
30
70
200
V
R
= 3.0 Vdc
T
A
= 25
C
T
A
= 25
C
f = 100 MHz
20
50
100
300
1000
200
50
7.0
2.0 3.0
5.0
Figure 4. Diode Capacitance versus Temperature
T
J
, JUNCTION TEMPERATURE (
C)
C T
, DIODE CAP
ACIT
ANCE (NORMALIZED)
1.04
-75
1.02
1.00
0.98
0.96
-25
+25
+75
+125
4.0 V
-50
0
+50
+100
Figure 5. Reverse Current versus Reverse Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
I R
, REVERSE CURRENT
(nA)
10
0
2
0.5
0.1
0.01
10
20
30
T
A
= 125
C
5.0
15
25
5
1
0.2
0.05
450
250
150
12
18
24
1.03
NORMALIZED to C
T
at T
A
= 25
C
V
R
= 2.0 V
0.02
T
A
= 75
C
T
A
= 25
C
20
30
0.5
0.3
3.0
27
9.0
15
21
30 V
1.01
0.99
0.97
100
20
50
MV104
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4
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