Semiconductor Components Industries, LLC, 2002
June, 2002 Rev. 5
1
Publication Order Number:
MC74HC4066A/D
MC74HC4066A
Quad Analog Switch/
Multiplexer/Demultiplexer
HighPerformance SiliconGate CMOS
The MC74HC4066A utilizes silicongate CMOS technology to
achieve fast propagation delays, low ON resistances, and low
O F F c h a n n e l l e a k a g e c u r r e n t . T h i s b i l a t e r a l s w i t c h /
multiplexer/demultiplexer controls analog and digital voltages that
may vary across the full powersupply range (from V
CC
to GND).
The HC4066A is identical in pinout to the metalgate CMOS
MC14016 and MC14066. Each device has four independent switches.
The device has been designed so the ON resistances (R
ON
) are more
linear over input voltage than R
ON
of metalgate CMOS analog
switches.
The ON/OFF control inputs are compatible with standard CMOS
outputs; with pullup resistors, they are compatible with LSTTL outputs.
For analog switches with voltagelevel translators, see the HC4316A.
Fast Switching and Propagation Speeds
High ON/OFF Output Voltage Ratio
Low Crosstalk Between Switches
Diode Protection on All Inputs/Outputs
Wide PowerSupply Voltage Range (V
CC
GND) = 2.0 to 12.0 Volts
Analog Input Voltage Range (V
CC
GND) = 2.0 to 12.0 Volts
Improved Linearity and Lower ON Resistance over Input Voltage
than the MC14016 or MC14066
Low Noise
Chip Complexity: 44 FETs or 11 Equivalent Gates
LOGIC DIAGRAM
X
A
Y
A
1
2
A ON/OFF CONTROL
13
X
B
Y
B
4
3
B ON/OFF CONTROL
5
X
C
Y
C
8
9
C ON/OFF CONTROL
6
X
D
Y
D
11
10
D ON/OFF CONTROL
12
ANALOG
OUTPUTS/INPUTS
ANALOG INPUTS/OUTPUTS = X
A
, X
B
, X
C
, X
D
PIN 14 = V
CC
PIN 7 = GND
FUNCTION TABLE
On/Off Control
State of
Input
Analog Switch
L
Off
H
On
Device
Package
Shipping
ORDERING INFORMATION
MC74HC4066AN
DIP14
2000 / Box
MC74HC4066ADR2
SO14
2500 / Reel
MARKING DIAGRAMS
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W
= Work Week
MC74HC4066ADT
TSSOP14
96 / Rail
MC74HC4066ADTR2
TSSOP14
2500 / Reel
TSSOP14
DT SUFFIX
CASE 948G
HC40
66A
ALYW
1
14
1
14
DIP14
N SUFFIX
CASE 646
MC74HC4066AN
AWLYYWW
SO14
D SUFFIX
CASE 751A
1
14
HC4066A
AWLYWW
PIN ASSIGNMENT
11
12
13
14
8
9
10
5
4
3
2
1
7
6
Y
D
X
D
V
CC
X
C
Y
C
X
B
Y
B
Y
A
X
A
GND
SOEIAJ14
F SUFFIX
CASE 965
1
14
74HC4066A
ALYW
D ON/OFF CONTROL
A ON/OFF CONTROL
C ON/OFF CONTROL
B ON/OFF CONTROL
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MC74HC4066A
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2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
Positive DC Supply Voltage (Referenced to GND)
0.5 to + 14.0
V
V
IS
Analog Input Voltage (Referenced to GND)
0.5 to V
CC
+ 0.5
V
V
in
Digital Input Voltage (Referenced to GND)
0.5 to V
CC
+ 0.5
V
I
DC Current Into or Out of Any Pin
25
mA
P
D
Power Dissipation in Still Air,
Plastic DIP
EIAJ/SOIC Package
TSSOP Package
750
500
450
mW
T
stg
Storage Temperature
65 to + 150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
260
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
Derating
Plastic DIP: 10 mW/
C from 65
to 125
C
EIAJ/SOIC Package: 7 mW/
C from 65
to 125
C
TSSOP Package: 6.1 mW/
C from 65
to 125
C
For high frequency or heavy load considerations, see the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
Positive DC Supply Voltage (Referenced to GND)
2.0
12.0
V
V
IS
Analog Input Voltage (Referenced to GND)
GND
V
CC
V
V
in
Digital Input Voltage (Referenced to GND)
GND
V
CC
V
V
IO
*
Static or Dynamic Voltage Across Switch
1.2
V
T
A
Operating Temperature, All Package Types
55
+ 125
C
t
r
, t
f
Input Rise and Fall Time, ON/OFF Control
Inputs (Figure 10)
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 9.0 V
V
CC
= 12.0 V
0
0
0
0
0
1000
600
500
400
250
ns
*For voltage drops across the switch greater than 1.2 V (switch on), excessive V
CC
current may be drawn; i.e., the current out of the switch may
contain both V
CC
and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.
DC ELECTRICAL CHARACTERISTIC
Digital Section
(Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
55 to
25
C
v
85
C
v
125
C
Unit
V
IH
Minimum HighLevel Voltage
ON/OFF Control Inputs
R
on
= Per Spec
2.0
3.0
4.5
9.0
12.0
1.5
2.1
3.15
6.3
8.4
1.5
2.1
3.15
6.3
8.4
1.5
2.1
3.15
6.3
8.4
V
V
IL
Maximum LowLevel Voltage
ON/OFF Control Inputs
R
on
= Per Spec
2.0
3.0
4.5
9.0
12.0
0.5
0.9
1.35
2.7
3.6
0.5
0.9
1.35
2.7
3.6
0.5
0.9
1.35
2.7
3.6
V
I
in
Maximum Input Leakage Current
ON/OFF Control Inputs
V
in
= V
CC
or GND
12.0
0.1
1.0
1.0
m
A
I
CC
Maximum Quiescent Supply Current (per Package)
V
in
= V
CC
or GND
V
IO
= 0 V
6.0
12.0
2
4
20
40
40
160
m
A
NOTE: Information on typical parametric values can be found in the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND
v
(V
in
or V
out
)
v
V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
I/O pins must be connected to a
properly terminated line or bus.
MC74HC4066A
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3
DC ELECTRICAL CHARACTERISTICS
Analog Section
(Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
55 to
25
C
v
85
C
v
125
C
Unit
R
on
Maximum "ON" Resistance
V
in
= V
IH
V
IS
= V
CC
to GND
I
S
v
2.0 mA (Figures 1, 2)
2.0
3.0
4.5
9.0
12.0
120
70
70
160
85
85
200
100
100
W
V
in
= V
IH
V
IS
= V
CC
or GND (Endpoints)
I
S
v
2.0 mA (Figures 1, 2)
2.0
3.0
4.5
9.0
12.0
70
50
50
85
60
60
120
80
80
D
R
on
Maximum Difference in "ON"
Resistance Between Any Two
Channels in the Same Package
V
in
= V
IH
V
IS
= 1/2 (V
CC
GND)
I
S
v
2.0 mA
2.0
4.5
9.0
12.0
20
15
15
25
20
20
30
25
25
W
I
off
Maximum OffChannel Leakage
Current, Any One Channel
V
in
= V
IL
V
IO
= V
CC
or GND
Switch Off (Figure 3)
12.0
0.1
0.5
1.0
m
A
I
on
Maximum OnChannel Leakage
Current, Any One Channel
V
in
= V
IH
V
IS
= V
CC
or GND
(Figure 4)
12.0
0.1
0.5
1.0
m
A
At supply voltage (V
CC
) approaching 3 V the analog switchon resistance becomes extremely nonlinear. Therefore, for lowvoltage
operation, it is recommended that these devices only be used to control digital signals.
NOTE: Information on typical parametric values can be found in the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, ON/OFF Control Inputs: t
r
= t
f
= 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
55 to
25
C
v
85
C
v
125
C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Analog Input to Analog Output
(Figures 8 and 9)
2.0
3.0
4.5
9.0
12.0
40
30
10
10
10
50
40
13
13
13
60
50
15
15
15
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, ON/OFF Control to Analog Output
(Figures 10 and 11)
2.0
3.0
4.5
9.0
12.0
80
60
30
25
25
90
70
38
28
28
110
80
45
30
30
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, ON/OFF Control to Analog Output
(Figures 10 and 1 1)
2.0
3.0
4.5
9.0
12.0
80
45
25
25
25
90
50
32
32
32
100
60
37
37
37
ns
C
Maximum Capacitance
ON/OFF Control Input
10
10
10
pF
Control Input = GND
Analog I/O
Feedthrough
35
1.0
35
1.0
35
1.0
NOTES:
1. For propagation delays with loads other than 50 pF, see the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
Typical @ 25
C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Per Switch) (Figure 13)*
15
pF
* Used to determine the noload dynamic power consumption: P
D
= C
PD
V
CC
2
f + I
CC
V
CC
. For load considerations, see the ON
Semiconductor HighSpeed CMOS Data Book (DL129/D).
MC74HC4066A
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4
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Test Conditions
V
CC
V
Limit*
25
C
54/74HC
Unit
BW
Maximum OnChannel Bandwidth
or
Minimum Frequency Response
(Figure 5)
f
in
= 1 MHz Sine Wave
Adjust f
in
Voltage to Obtain 0 dBm at V
OS
Increase f
in
Frequency Until dB Meter Reads 3 dB
R
L
= 50
W
, C
L
= 10 pF
4.5
9.0
12.0
150
160
160
MHz
OffChannel Feedthrough Isolation
(Figure 6)
f
in
Sine Wave
Adjust f
in
Voltage to Obtain 0 dBm at V
IS
f
in
= 10 kHz, R
L
= 600
W
, C
L
= 50 pF
4.5
9.0
12.0
50
50
50
dB
f
in
= 1.0 MHz, R
L
= 50
W
, C
L
= 10 pF
4.5
9.0
12.0
40
40
40
Feedthrough Noise, Control to
Switch
(Figure 7)
V
in
v
1 MHz Square Wave (t
r
= t
f
= 6 ns)
Adjust R
L
at Setup so that I
S
= 0 A
R
L
= 600
W
, C
L
= 50 pF
4.5
9.0
12.0
60
130
200
mV
PP
( g
)
R
L
= 10 k
W
, C
L
= 10 pF
4.5
9.0
12.0
30
65
100
Crosstalk Between Any Two
Switches
(Figure 12)
f
in
Sine Wave
Adjust f
in
Voltage to Obtain 0 dBm at V
IS
f
in
= 10 kHz, R
L
= 600
W
, C
L
= 50 pF
4.5
9.0
12.0
70
70
70
dB
( g
)
f
in
= 1.0 MHz, R
L
= 50
W
, C
L
= 10 pF
4.5
9.0
12.0
80
80
80
THD
Total Harmonic Distortion
(Figure 14)
f
in
= 1 kHz, R
L
= 10 k
W
, C
L
= 50 pF
THD = THD
Measured
THD
Source
V
IS
= 4.0 V
PP
sine wave
V
IS
= 8.0 V
PP
sine wave
V
IS
= 11.0 V
PP
sine wave
4.5
9.0
12.0
0.10
0.06
0.04
%
*Guaranteed limits not tested. Determined by design and verified by qualification.
MC74HC4066A
http://onsemi.com
5
0
50
100
150
200
250
300
350
400
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
+25
C
+125
C
55
C
Figure 1a. Typical On Resistance, V
CC
= 2.0 V
Figure 1b. Typical On Resistance, V
CC
= 3.0 V
Figure 1c. Typical On Resistance, V
CC
= 4.5 V
V
is
, INPUT VOLTAGE (VOLTS), REFERENCED TO GROUND
RON @ 2 V
V
is
, INPUT VOLTAGE (VOLTS), REFERENCED TO GROUND
RON @ 3 V
0
20
40
60
80
100
120
140
160
180
200
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
V
is
, INPUT VOLTAGE (VOLTS), REFERENCED TO GROUND
RON @ 4.5 V
0
20
40
60
80
100
120
140
160
180
200
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
+25
C
+125
C
55
C
+25
C
+125
C
55
C
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